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SSM9575
-4A , -60V , R
Elektronische Bauelemente
P-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen-free
DS(ON)
90 m
DESCRIPTION
The SSM9575 provide the designer with the best
combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
FEATURES
Simple Drive Requirement
Lower On-resistance
Fast Switching Characteristic
APPLICATION
The SOT-223 package is universally preferred for
all commercial-industrial surface mount applications and
suited for low voltage application such as DC/DC converters.
MARKING:
9575
Date code
ABSOLUTE MAXIMUM RATINGS
Gate
Drain
Source
SOT-223
A
M
Top View
K
L
B
C
1
2
3
E
D
F G H J
REF.
Millimeter Millimete
Min. Max.
A 6.20 6.70 G - 0.18
B 6.70 7.30 H 1.89 2.15
C 3.30 3.70 J 0.25 0.35
D 1.40 1.90 K 0.95 1.20
E 4.50 4.70 L 2.30 REF.
F 0.60 0.84 M 2.90 3.10
REF.
Min. Max.
4
Parameter Symbol Ratings
Unit
Drain-Source Voltage VDS -60 V
Gate-Source Voltage VGS ±25 V
T
=25°C -4
Continuous Drain Current 3
Pulsed Drain Current1 I
Total Power Dissipation @ T
=25°C P
A
Maximum Resistance Junction-ambient 3 R
A
T
=70°C
A
I
D
-20 A
DM
3 W
D
45 °C / W
θJA
-3.2
A
Linear Derating Factor 0.02 W / °C
Operating Junction & Storage temperature TJ, T
-55~150 °C
STG
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
12-Mar-2012 Rev. B Page 1 of 4
Page 2
SSM9575
-4A , -60V , R
Elektronische Bauelemente
P-Channel Enhancement Mode Power MOSFET
DS(ON)
90 m
ELECTRICAL CHARACTERISTICS (T
=25°C unless otherwise specified)
A
Parameter Symbol Min Typ Max Unit Test Conditions
Drain-Source Breakdown Voltage BV
Breakdown Voltage Temperature
Coefficient
BV
Gate Threshold Voltage V
Forward Trans-conductance gfs - 7 - S V
Gate-Source Leakage Current I
Drain-Source Leakage
Current
TJ=25°C - - -1 VDS= -60V, VGS=0
T
=70°C
J
Static Drain-Source On-Resistance2 R
Total Gate Charge 2 Q
Gate-Source Charge Qgs - 5 -
Gate-Drain (“Miller”) Charge Qgd - 7 -
Turn-on Delay Time 2 T
Rise Time Tr - 5 -
Turn-off Delay Time T
Fall Time Tf - 32 -
-60 - - V VGS=0, ID= -250μA
DSS
/ T
DSS
-1 - -3 V VDS=VGS, ID= -250μA
GS(th)
- - ±100 nA VGS= ±25V
GSS
I
DSS
- -0.04 - V / °C Reference to 25°C, ID = -1mA
J
- - -25
- - 90 VGS= -10V, ID= -4A
DS(ON)
- - 120
- 18 28
g
- 12 -
d(on)
- 68 -
d(off)
uA
mΩ
nC
nS
= -10V, ID = -4A
DS
= -48V, VGS=0
V
DS
= -4.5V, ID= -3A
V
GS
= -4A
I
D
V
= -48V
DS
V
= -4.5V
GS
V
= -30V
DS
I
= -1A
D
V
= -10 V
GS
R
=3.3Ω
G
R
=30Ω
D
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
- 1745 2790
iss
- 165 -
oss
- 125 -
rss
pF
=0
V
GS
V
= -25V
DS
f =1 MHz
Source-Drain Diode
Forward On Voltage 2 V
Reverse Recovery Time 2 T
Reverse Recovery Charge Qrr - 146 - nC
Notes:
1. Pulse width limited by Max. junction temperature.
2. Pulse width≦300μs, duty cycle≦2%.
3. Surface mounted on 1 in
2
copper pad of FR4 board; 125°C / W when mounted on Min. copper pad.
- - -1.2 V IS= -2A, VGS=0
SD
- 56 - nS
rr
= -4A, VGS=0
I
S
dl/dt=100A / μs
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
12-Mar-2012 Rev. B Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVES
SSM9575
-4A , -60V , R
P-Channel Enhancement Mode Power MOSFET
DS(ON)
90 m
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
12-Mar-2012 Rev. B Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVES
SSM9575
P-Channel Enhancement Mode Power MOSFET
-4A , -60V , R
DS(ON)
90 m
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
12-Mar-2012 Rev. B Page 4 of 4
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