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Elektronische Bauelemente
RoHS Compliant Product
A Suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSM452 provide the designer with the best combination of
fast switching, low on-resistance and cost-effectiveness.
FEATURES
Simple Drive Requirement
Lower On-resistance
Fast Switching
MARKING
SSM452
-6 A, -30V, R
P-Channel Enhancement Mode Power MOSFET
K
Drain
F G H J
DS(ON)
A
M
Top View
E
55mΩ
SOT-223
C
L
B
1
2
3
D
4
Gate
Source
Millimeter
REF.
Min. Max. Min. Max.
A 6.20 6.70 G - 0.10
B 6.70 7.30 H - C 3.30 3.70 J 0.25 0.35
D 1.42 1.90 K - E 4.50 4.70 L 2.30 REF.
F 0.60 0.82 M 2.90 3.10
REF.
Millimete
MAXIMUM RATINGS (T
= 25°C unless otherwise specified)
A
PARAMETER SYMBOL RATING UNIT
Drain – Source Voltage VDS -30 V
Gate – Source Voltage VGS ±20 V
Continuous Drain Current 3
Pulsed Drain Current 1 I
Total Power Dissipation PD 2.7 W
Linear Derating Factor 0.02 W / °C
Operating Junction & Storage Temperature
Range
TA = 25°C
TA = 70°C -4.8 A
ID
DM
T
, T
-55 ~ 150 °C
J
STG
-6.0 A
-20 A
THERMAL DATA
Maximum Junction–Ambient 3 R
45 °C / W
θJA
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
24-Jun-2010 Rev. A Page 1 of 4
Page 2
2
SSM452
-6 A, -30V, R
Elektronische Bauelemente
P-Channel Enhancement Mode Power MOSFET
DS(ON)
55mΩ
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise specified)
J
PARAMETER SYMBOL MIN TYP MAX UNIT TEST CONDITION
Drain-Source Breakdown Voltage BV
Breakdown Voltage
△BV
Temperature Coefficient
Gate Threshold Voltage V
Forward Transconductance gFS - 10 - S VDS= -10V, ID= -5.3A
Gate-Source Leakage Current I
Drain-Source Leakage Current
= 25°C)
(T
J
Drain-Source Leakage Current
(TJ= 70°C)
Drain-Source On Resistance R
Total Gate Charge 2 Q
Gate-Source Charge Qgs - 2.8 -
Gate-Drain (“Miller”) Charge Qgd - 5.2 -
Turn-on Delay Time 2 T
Rise Time Tr - 8 -
Turn-off Delay Time T
Fall Time Tf - 17 -
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
-30 - - V VGS= 0V, ID = -250uA
DSS
/ △T
DSS
-1.0 - -3.0 V VDS= V
GS(TH)
- - ±100 nA VGS= ±20V
GSS
- -0.02 - V / °C
J
- - -1
I
DSS
Reference to 25°C,
= -1mA
I
D
V
DS
μA
GS, ID
= -30V, VGS=0V
- - -25 VDS= -24V, VGS=0V
DS(ON)
- 9.2 16
g
- 75 100 VGS= -4.5V, ID= -4.2A
- 45 55
mΩ
nC
= -10V, ID= -5.3A
V
GS
V
= -4.5V
GS
= -24V
V
DS
ID= -5.3A
- 11 -
d(ON)
- 25 -
d(OFF)
nS
VDS= -15V
= -10V
V
GS
= -1A
I
D
RG= 6Ω, RD= 15Ω
- 507 912
ISS
- 222 -
OSS
- 158 -
RSS
pF
V
= -15V
DS
= 0V
V
GS
f= 1MHz
= -250uA
SOURCE-DRAIN DIODE
Forward On Voltage
Reverse Recovery Time Trr - 29 - nS
Reverse Recovery Charge Qrr - 20 - nC
Note:
1. Pulse width limited by Maximum junction temperature.
2. Pulse width ≦ 300 μs, Duty cycle ≦ 2%
3. Surface mounted on 1 in
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
24-Jun-2010 Rev. A Page 2 of 4
V
2
copper pad of FR4 board; 120°C / W when mounted on Min. copper pad.
- - -1.2 V VGS= 0V, IS= -2.3A
SD
= 0V, IS= -5.3A,
V
GS
dl/dt= 100A/μs
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVES
SSM452
-6 A, -30V, R
P-Channel Enhancement Mode Power MOSFET
DS(ON)
55mΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
24-Jun-2010 Rev. A Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVES
SSM452
-6 A, -30V, R
P-Channel Enhancement Mode Power MOSFET
DS(ON)
55mΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
24-Jun-2010 Rev. A Page 4 of 4
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