Datasheet SSM3K15FS Datasheet (TOSHIBA)

查询SSM3K15FS供应商

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM3K15FS

SSM3K15FS

High Speed Switching Applications

Analog Switching Applications

· Compact package suitable for high-density mounting

· Low ON-resistance : R

: R

Maximum Ratings

Characteristic Symbol Rating Unit

Drain-Source voltage VDS 30 V

Gate-Source voltage V

Drain current

Drain power dissipation (Ta = 25°C) PD 100 mW

Channel temperature Tch 150 °C

Storage temperature range T

Marking Equivalent Circuit

3

= 4.0 Ω (max) (@VGS = 4 V)

on

= 7.0 Ω (max) (@VGS = 2.5 V)

on

(Ta ==== 25°C)

DC ID 100

Pulse I

±20 V

GSS

200

DP

-55~150 °C

stg

3

mA

JEDEC ―

JEITA ―

TOSHIBA 2-2H1B

Weight: 2.4 mg (typ.)

Unit: mm

D P

1 2

12

Handling Precaution

When handling individual devices (which are not yet mounted on a circuit board), be sure that the
environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and
containers and other objects that come into direct contact with devices should be made of anti-static materials.

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SSM3K15FS

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)

Electrical Characteristics

Characteristic Symbol Test Condition Min Typ. Max Unit

Gate leakage current I

Drain-Source breakdown voltage V

Drain Cut-off current I

Gate threshold voltage Vth VDS = 3 V, ID = 0.1 mA 0.8 ¾ 1.5 V

Forward transfer admittance |Yfs| VDS = 3 V, ID = 10 mA 25 ¾ ¾ mS

Drain-Source ON resistance R

Input capacitance C

Reverse transfer capacitance C

Output capacitance C

Switching time

Turn-on time ton ¾ 50 ¾

Turn-off time t

(Ta ==== 25°C)

VGS = ±16 V, VDS = 0 ¾ ¾ ±1 mA

GSS

(BR) DSSID

DSS

DS (ON)

iss

rss

oss

off

= 0.1 mA, VGS = 0 30 ¾ ¾ V

VDS = 30 V, VGS = 0 ¾ ¾ 1 mA

ID = 10 mA, VGS = 4 V ¾ 2.2 4.0

= 10 mA, VGS = 2.5 V ¾ 4.0 7.0

I

D

VDS = 3 V, VGS = 0, f = 1 MHz ¾ 7.8 ¾ pF

VDS = 3 V, VGS = 0, f = 1 MHz ¾ 3.6 ¾ pF

VDS = 3 V, VGS = 0, f = 1 MHz ¾ 8.8 ¾ pF

= 5 V, ID = 10 mA,

V

DD

V

= 0~5 V

GS

¾

180 ¾

Switching Time Test Circuit

(a) Test circuit (b) VIN

5 V

OUT

IN

5 V

90%

W

ns

10%

0

10 ms

VDD = 5 V
D.U.

1%

V

: tr, tf < 5 ns

IN

(Z

= 50 W)

out

Common source
Ta = 25°C

50 9

RL

V

DD

(c) V

OUT

V

V

DS (ON

0 V

DD

10%

90%

t

r

t

on

t

off

Precaution

Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 mA for
this product. For normal switching operation, V
lower voltage than V

(relationship can be established as follows: V

th

.

GS (off)

Please take this into consideration for using the device.

V

recommended voltage of 2.5 V or higher to turn on this product.

GS

requires higher voltage than Vth and V

GS (on)

< Vth < V

GS (on)

)

GS (off)

t

f

requires

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SSM3K15FS

250

200

(mA)

150

D

100

Drain current I

50

0

0

Drain-Source voltage VDS (V)

10

8

6

(W)

DS (ON)

R

VGS = 2.5 V

4

Drain-Source on resistance

2

0

0

Drain current ID (mA)

8

Common Source
ID = 10 mA

7

6

5

(W)

4

DS (ON)

3

R

2

Drain-Source on resistance

1

0

-25

VGS = 2.5 V

25 100

Ambient temperature Ta (°C)

I

D

3 4 10

R

DS (ON)

80 200160 40

R

DS (ON)

50 150125 0

– VDS

121.5 0.5

4 V

4 V

Common Source

Ta = 25°C

–ID

Common Source

Ta = 25°C

120

– Ta

75

2.7

2.5

2.3

VGS = 2.1 V

– VGS

I

1000

Common Source

VDS = 3 V

100

(mA)

10

D

Ta = 100°C

25°C

1

Drain current I

0.1

0.01
0

Gate-Source voltage VGS (V)

D

-25°C

243 1

DS (ON)

Ta = 100°C

25°C

-25°C

4108 2

– VGS

Common Source

ID = 10 mA

6

6

R

5

4

(W)

3

DS (ON)

R

2

Drain-Source on resistance

1

0

0

Gate-Source voltage VGS (V)

V

– Ta

2

Common Source

1.8

ID = 0.1 mA
VDS = 3 V

1.6

(V)

th

1.4

1.2

1

0.8

0.6

0.4

Gate threshold voltage V

0.2

0

-25

Ambient temperature Ta (°C)

th

50 150125 0

25 100

75

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SSM3K15FS

f

r

f

f

1000

Forward transfer admittance

| (mS)

fs

|Y

Common Source

500

VDS = 3 V

300

Ta = 25°C

100

50

30

10

5

3

1

1

Drain current ID (mA)

ïY

ï – ID

fs

100010 100

10000

5000

3000

Switching time t (ns)

1000

500

300

100

t

of

tf

ton

50

30

tr

10

0.1

Drain current ID (mA)

t – I

D

Common Source
VDD = 5 V
VGS = 0~5 V
Ta = 25°C

1001 10

Capacitance C (pF)

100

0.5

0.3

0.1

C – V

DS

Common Source

50

30

10

5

3

1

0.1

Drain-Source voltage VDS (V)

VGS = 0 V
f = 1 MHz
Ta = 25°C

C

iss

C

oss

C

rss

1001 10

(mA)

Drain reverse current I

Switching time t (ns)

(mW)

Drain power dissipation P

DR

D

250

200

150

100

10000

5000

3000

1000

500

300

100

250

200

150

100

– VDS

I

DR

Common Source

VGS = 0 V

Ta = 25°C

D

I

G

50

0

0

-0.2 -0.6 -0.8 -1 -1.2

Drain-Source voltage VDS (V)

DR

S

t – I

D

t

of

t

t

on

t

50

30

10

0.1

Drain current ID (mA)

– Ta

P

D

50

0

0

20 60 80 100 140 120

Ambient temperature Ta (°C)

Common Source
VDD = 3 V
VGS = 0~2.5 V
Ta = 25°C

-1.4-0.4

100110

16040

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2001-12-04

SSM3K15FS

A

RESTRICTIONS ON PRODUCT USE

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..

· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.

· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.

· The information contained herein is subject to change without notice.

000707EA

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2001-12-04

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