Datasheet SSM3J09FU Datasheet (TOSHIBA)

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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

SSM3J09FU

SSM3J09FU

Management Switch

High Speed Switching Applications

· Small package

· Low on resistance : Ron = 2.7 Ω (max) (@VGS = −10 V)

: Ron = 4.2 Ω (max) (@VGS = −4 V)

Maximum Ratings

Characteristics Symbol Rating Unit

Drain-Source voltage V

Gate-Source voltage V

Drain current

Drain power dissipation (Ta = 25°C) PD (Note1) 150 mW

Channel temperature T

Storage temperature T

Note 1: Mounted on FR4 board

(25.4 mm ´ 25.4 mm ´ 1.6 t, Cu Pad: 0.6 mm

(Ta ==== 25°C)

DC I

Pulse I

Marking Equivalent Circuit

DS

GSS

D

DP

ch

stg

(top view)

-30 V
±20 V

-200

-400

150 °C

-55~150 °C

2

´ 3) Figure 1.

mA

Figure 1: 25.4 mm ´´´´ 25.4 mm ´´´´ 1.6 t,

Unit: mm

JEDEC ―

JEITA SC-70

TOSHIBA 2-2E1E

Weight: 0.006 g (typ.)

Cu Pad: 0.6 mm2 ´´´´ 3

3

0.6 mm

D K

1 2 3 1 2

1.0 mm

Handling Precaution

When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.

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Electrical Characteristics

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current I

Drain-Source breakdown voltage V

Drain cut-off current I

Gate threshold voltage Vth VDS = -5 V, ID = -0.1 mA -1.1 ¾ -1.8 V
Forward transfer admittance ½Yfs½ VDS = -5 V, ID = -100 mA (Note2) 115 ¾ ¾ mS

Drain-Source ON resistance R

Input capacitance C

Reverse transfer capacitance C

Output capacitance C

Switching time

Turn-on time ton ¾ 85 ¾ ns

Turn-off time t

(Ta ==== 25°C)

(BR) DSSID

DS (ON)

VGS = ±16 V, VDS = 0 ¾ ¾ ±1 mA

GSS

= -1 mA, VGS = 0 -30 ¾ ¾ V

VDS = -30 V, VGS = 0 ¾ ¾ -1 mA

DSS

ID = -100 mA, VGS = -10 V (Note2) ¾ 2.1 2.7

ID = -100 mA, VGS = -4 V (Note2) ¾ 3.3 4.2

I

= -100 mA, VGS = -3.3 V (Note2) ¾ 4.0 6.0

D

VDS = -5 V, VGS = 0, f = 1 MHz ¾ 22 ¾ pF

iss

VDS = -5 V, VGS = 0, f = 1 MHz ¾ 5 ¾ pF

rss

VDS = -5 V, VGS = 0, f = 1 MHz ¾ 14 ¾ pF

oss

= -5 V, ID = -100 mA,

V

DD

= 0~-4 V

V

off

GS

¾

85

¾

Note 2: Pulse test

Switching Time Test Circuit

W

ns

(a) Test circuit (b) VIN

0

-4 V

10 ms

VDD = -5 V
D.U.
Input: t
(Z

= 50 W)

out

Common Source
Ta = 25°C

Input

1%

, tf < 5 ns

r

0 V

Output

L

50 9

R

V

DD

(c) V

OUT

V

DS (ON

-4 V

V

DD

t

on

10%

t

r

90%

10%

90%

t

off

Precaution

Vth can be expressed as voltage between gate and source when low operating current value is ID = -100 mA for
this product. For normal switching operation, V
lower voltage than V

th

.

(relationship can be established as follows: V

GS (on)

GS (off)

Please take this into consideration for using the device.
V

recommended voltage of -4.0 V or higher to turn on this product.

GS

requires higher voltage than Vth and VGS (off) requires

< Vth < V

GS (on)

)

t

f

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-500 8

Common Source
Ta = 25°C

-400

(mA)

-300

D

-200

Drain current I

-100

0

0 -0.5 -1 -1.5 -2

Drain-Source voltage VDS (V)

– VDS

I

D

-10 -4

VGS = -2.4 V

-3.3

-3.0

-2.8

-2.6

25°C

– VGS

I

D

-25°C

-1000

Common Source

VDS = -5 V

-100

(mA)

-10

D

-1

Drain current I

-0.1

Ta = 100°C

-0.01
0 -4 -2 -1

Gate-Source voltage VGS (V)

-3

8

Common Source

7

ID = -100 mA

6

5

(W)

4

DS (ON)

3

R

2

Drain-Source on resistance

1

0

-25 0 25 75 100 150

VGS = -3.3 V

Ambient temperature Ta (°C)

R

– Ta

DS (ON)

-4 V

-10 V

50 125

SSM3J09FU

DS (ON)

-10 V

Ta = 100°C

25°C

-25°C

½ – ID

½Y

fs

– ID

– V

GS

Common Source

Ta = 25°C

Common Source

ID = -100 mA

-1000

R

7

6

5

(W)

4

DS (ON)

3

R

2

Drain-Source on resistance

1

0

0 -100 -200 -300 -400 -500

8

7

6

5

(W)

4

DS (ON)

3

R

2

Drain-Source on resistance

1

0

0 -2 -4 -6 -8 -10

1000

500

300

100

½ (mS)

fs

½Y

50

30

Forward transfer admittance

10

-10 -100

VGS = -3.3 V

-4 V

Drain current ID (mA)

R

DS (ON)

Gate-Source voltage VGS (V)

Common Source

VDS = -5 V

Ta = 25°C

-30 -300 -50 -500

Drain current ID (mA)

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f

f

r

-2

-1.8

-1.6

(V)

th

-1.4

-1.2

-1

-0.8

-0.6

-0.4

Gate threshold voltage V

-0.2

0

-25 0 25 75 100 150

Ambient temperature Ta (°C)

500

100

10

Capacitance C (pF)

1

-0.1 -1

Drain-Source voltage VDS (V)

200

150

(mW)

D

100

50

Power dissipation P

0

0 160 100 60 20 80 40 120

Ambient temperature Ta (°C)

– Ta

V

th

Common Source

ID = -0.1 mA

VDS = -5 V

50 125

C – V

DS

Common Source
VGS = 0 V
f = 1 MHz
Ta = 25°C

-10 -100

– Ta

P

D

Mounted on FR4 board

(25.4 mm ´ 25.4 mm ´1.6 t

Cu pad: 0.6 mm2 ´ 3) Figure 1

C

C

C

140

iss

oss

rss

– VDS

I

-500

-400

(mA)

DR

-300

-200

-100

Drain Reveres current I

Common Source

VGS = 0

Ta = 25°C

G I

0

0.2 0.6 0.8 1.2

0

Drain-Source voltage VDS (V)

DR

D

DR

S

0.4 1

1.4

t – I

5000

1000

t

100

Switching time t (ns)

10

of

t

t

on

t

-1 -10

Drain current ID (mA)

D

Common Source
VDD = -5 V
VGS = 0~-4 V
Ta = 25°C

-100 -1000

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RESTRICTIONS ON PRODUCT USE

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..

· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.

· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.

· The information contained herein is subject to change without notice.

000707EA

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