Datasheet SSM3J01T Datasheet (TOSHIBA)

查询SSM3J01T供应商

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

SSM3J01T

SSM3J01T

Power Management Switch

High Speed Switching Applications

· Small Package

· Low on Resistance : R

: R

· Low Gate Threshold Voltage

Maximum Ratings

Characteristic Symbol Rating Unit

Drain-Source voltage VDS -30 V

Gate-Source voltage V

Drain current

Drain power dissipation (Ta = 25°C)

Channel temperature Tch 150 °C

Storage temperature range T

Note 1: Mounted on FR4 board

(25.4 mm ´ 25.4 mm ´ 1.6 t, Cu pad: 645 mm

Note 2: The pulse width limited by max channel temperature.

= 0.4 Ω (max) (@VGS = −4 V)

on

= 0.6 Ω (max) (@VGS = −2.5 V)

on

(Ta ==== 25°C)

DC ID -1.7

Pulse

±10 V

GSS

I

DP

(Note2)

P

D

(Note1)

-55~150 °C

stg

-3.4

1250 mW

2

, t = 10 s)

A

Handling Precaution

Unit: mm

JEDEC ―

JEITA ―

TOSHIBA 2-3S1A

Weight: 10 mg (typ.)

When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.

The Channel-to-Ambient thermal resistance R
board material, board area, board thickness and pad area, and are also affected by the environment in which the
product is used. When using this device, please take heat dissipation fully into account.

th (ch-a)

and the drain power dissipation PD vary according to the

Marking Equivalent Circuit

3

D E

1 2

3

12

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SSM3J01T

V

V

V

Electrical Characteristics

Characteristic Symbol Test Condition Min Typ. Max Unit

Gate leakage current I

Drain-Source breakdown voltage V

Drain Cut-off current I

Gate threshold voltage Vth VDS = -3 V, ID = -0.1 mA -0.6 ¾ -1.1 V

Forward transfer admittance |Yfs| VDS = -3 V, ID = -0.85 A (Note3) 1.2 2.3 ¾ S

Drain-Source ON resistance R

Drain-Source ON resistance R

Input capacitance C

Reverse transfer capacitance C

Output capacitance C

Switching time

Turn-on time ton ¾ 36 ¾

Turn-off time t

(Ta ==== 25°C)

VGS = ±10 V, VDS = 0 ¾ ¾ ±1 mA

GSS

(BR) DSSID

DSS

DS (ON)

DS (ON)

VDS = -10 V, VGS = 0, f = 1 MHz ¾ 240 ¾ pF

iss

VDS = -10 V, VGS = 0, f = 1 MHz ¾ 24 ¾ pF

rss

oss

off

= -1 mA, VGS = 0 -30 ¾ ¾ V

VDS = -30 V, VGS = 0 ¾ ¾ -1 mA

ID = -0.85 A, VGS = -4 V (Note3) ¾ 0.3 0.4 W

ID = -0.85 A, VGS = -2.5 V (Note3) ¾ 0.4 0.6 W

VDS = -10 V, VGS = 0, f = 1 MHz ¾ 94 ¾ pF

= -15 V, ID = -0.3 A

V

DD

= 0~-2.5 V, RG = 4.7 W

V

GS

¾ 37 ¾

Note3: Pulse test

Switching Time Test Circuit

ns

(a) Test circuit

0

IN

-2.5

10 mS

(b)

= -15 V

V

OUT

G

R

V

DD

DD

R

= 4.7 W

G

D.U.<1%
V

IN

COMMON SOURCE
Ta = 25°C

: tr, tf < 5 ns

IN

VGS

(c)

OUT

VDS

0 V

-2.5 V

V

DS (ON)

V

DD

10%

90%

90%

10%

tr t

ton t

f

off

Precaution

Vth can be expressed as voltage between gate and source when low operating current value is ID = -100 mA fo r
this product. For normal switching operation, V
voltage than V

(relationship can be established as follows: V

th

.

GS (off)

Please take this into consideration for using the device.

V

recommended voltage of -2.5 V or higher to turn on this product.

GS

requires higher voltage than Vth and V

GS (on)

< Vth < V

GS (on)

)

GS (off)

requires lower

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SSM3J01T

-2

-1.8

-1.6

-1.4

(A)

D

-1.2

-1.0

-0.8

-0.6

Drain current I

-0.4

-0.2

0

-4 V

0

-0.5 -1 -1.5 -2

Drain-source voltage VDS (V)

1

Common Source

Ta = 25°C

0.8

0.6

(9)

0.4

DS (ON)

R

Drain-Source on resistance

0.2

0

0 -0.5 -1 -1.5 -2

Drain current ID (A)

100

Common Source

VDS = -3 V

Ta = 25°C

10

1

| (S)

fs

|Y

0.1

Forward transfer admittance

0.01

-0.001

Drain current ID (A)

– VDS

I

D

-2.5 V

R

DS (ON)

VGS = - 2.5 V

|Y

fs

-2.2 V

– ID

-4 V

| – ID

Common Source

Ta = 25°C

-2.0 V

-1.8 V

-1.6 V

VGS = -1.4 V

– VGS

I

-10000
Common Source

VDS = -3 V

-1000

-100

(mA)

D

-10

Drain current I

-0.1

-0.01

Ta = 100°C

-1

0

Gate-source voltage VGS (V)

D

-25°C

25°C

-1.5 -2 -0.5 -1 -2.5 -3

DS (ON)

VGS = -2.5 V

– Ta

-4 V

150 100 50

1

R

Common Source

ID = -0.85 A

0.8

0.6

(9)

0.4

RDS (ON)

Drain-Source on resistance

0.2

0

0

Ambient temperature Ta (°C)

C – V

1000

100

10

Capacitance C (pF)

Common Source
VGS = 0
f = 1 MHz
Ta = 25°C

1

-10 -0.1 -1 -0.01

-0.1

-1

Drain-Source voltage VDS (V)

DS

C

iss

C

oss

C

rss

-100-10

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SSM3J01T

f

f

)

10000

1000

100

Switching time t (ns)

t – I

D

Common Source

VDD = -15 V

VGS = 0~-2.5 V

RG = 4.7 W

Ta = 25°C

t

of

t

10

-0.001

ton

tr

-0.01 -1

Drain current ID (A)

-01

1.5

1.25

(W)

D

0.75

0.5

0.25

Drain power dissipation P

-10

-1

– Ta

P

D

t = 10 s

1

DC

0

0

25 50 75 125 150

Ambient temperature Ta (°C)

Mounted on FR4 board

(25.4 mm ´ 25.4 mm ´ 1.6 t,

Cu Pad: 645 mm2）

100

Safe operating area

ID max (pulsed)

IDmax (continuous

10 ms*

1 ms*

(A)

D

-0.1

DC operation

Ta = 25°C

10 s*

1000

r

– tw

th

Drain current I

Mounted on FR4 board
(25.4 mm ´ 25.4 mm

´ 1.6 t,

-0.01
Cu Pad: 645 mm2)

*: Single nonrepetitive

Pulse
Ta = 25°C
Curves must be derated

linearly with increase in

-0.1

temperature.

-1 -100

Drain-Source voltage VDS (V)

-0.001

-10

V

DSS

max

(°C /W)

th

100

10

Single pulse

Mounted on FR4 board

Transient thermal impedance r

1

0.001

Pulse width tw (s)

(25.4 mm ´ 25.4 mm ´ 1.6 t,

Cu Pad: 645 mm2)

1000 0.01 0.1 1 10 100

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SSM3J01T

A

RESTRICTIONS ON PRODUCT USE

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..

· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.

· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.

· The information contained herein is subject to change without notice.

000707EA

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