Filterless Class-D amplifier with ultraefficient spread-
spectrum Σ-Δ modulation
Internal modulator synchronization (SYNC)
3 W into 3 Ω load and 1.4 W into 8 Ω load at 5.0 V supply
with <1% total harmonic distortion (THD)
90% efficiency at 5.0 V, 1.4 W into 8 Ω speaker
Signal-to-noise ratio (SNR): 98 dB
Single-supply operation: 2.5 V to 5.5 V
Ultralow shutdown current: 20 nA
Short-circuit and thermal protection with autorecovery
Available in 9-ball, 1.5 mm × 1.5 mm WLCSP
Pop-and-click suppression
Built-in resistors reduce board component count
Default fixed 12 dB or user-adjustable gain setting
APPLICATIONS
Mobile phones
MP3 players
Portable gaming
Portable electronics
Educational toys
GENERAL DESCRIPTION
The SSM2319 is a fully integrated, high efficiency Class-D
audio amplifier. It is designed to maximize performance for
mobile phone applications. The application circuit requires a
minimum of external components and operates from a single
2.5 V to 5.5 V supply. It is capable of delivering 3 W of continuous
output power with <1% THD + N driving a 3 Ω load from a
5.0 V supply.
Mono 3 W Class-D Audio Amplifier
SSM2319
The SSM2319 features a high efficiency, low noise modulation
scheme that does not require any external LC output filters. The
modulation continues to provide high efficiency even at low output
power. It operates with 90% efficiency at 1.4 W into 8 Ω or 85%
efficiency at 3 W into 3 Ω from a 5.0 V supply and has an SNR
of 98 dB. Spread-spectrum pulse density modulation is used to
provide lower EMI-radiated emissions compared with other
Class-D architectures.
SYNC can be activated in the event that end users are concerned
about clock intermodulation (beating effect) of several amplifiers in
close proximity.
The SSM2319 has a micropower shutdown mode with a typical
shutdown current of 20 nA. Shutdown is enabled by applying a
logic low to the
The device also includes pop-and-click suppression circuitry.
This minimizes voltage glitches at the output during turn-on and
turn-off, reducing audible noise on activation and deactivation.
The default gain of the SSM2319 is 12 dB, but users can reduce
the gain by using a pair of external resistors (see the Gain section).
The SSM2319 is specified over the industrial temperature range
of −40°C to +85°C. It has built-in thermal shutdown and output
short-circuit protection. It is available in a 9-ball, 1.5 mm × 1.5 mm
wafer level chip scale package (WLCSP).
SD
pin.
FUNCTIONAL BLOCK DIAGRAM
10µF
SSM2319
AUDIO IN–
AUDIO IN+
HUTDOWN
*INPUT CAPACITORS ARE O PTIONAL IF INPUT DC COMMON-MO DE
VOLTAGE IS APPROXIMATELY V
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
Power Supply Rejection Ratio PSRR VDD = 2.5 V to 5.0 V, dc input floating/ground 70 85 dB
PSRR
Supply Current I
SY
V
V
V
V
V
Shutdown Current ISD
GAIN CONTROL
Closed-Loop Gain Av 12 dB
Differential Input Impedance Z
IN
SHUTDOWN CONTROL
Input Voltage High V
Input Voltage Low V
Turn-On Time t
Turn-Off Time t
Output Impedance Z
IH
IL
WU
SD
OUT
RL = 8 Ω, THD = 1%, f = 1 kHz, 20 kHz BW, VDD = 5.0 V 1.41 W
= 8 Ω, THD = 1%, f = 1 kHz, 20 kHz BW, VDD = 3.6 V 0.72 W
L
= 8 Ω, THD = 1%, f = 1 kHz, 20 kHz BW, VDD = 2.5 V 0.33 W
L
= 8 Ω, THD = 10%, f = 1 kHz, 20 kHz BW, VDD = 5.0 V 1.77 W
L
= 8 Ω, THD = 10%, f = 1 kHz, 20 kHz BW, VDD = 3.6 V 0.91 W
L
= 8 Ω, THD = 10%, f = 1 kHz, 20 kHz BW, VDD = 2.5 V 0.42 W
L
= 4 Ω, THD = 1%, f = 1 kHz, 20 kHz BW, VDD = 5.0 V 2.53 W
L
= 4 Ω, THD = 1%, f = 1 kHz, 20 kHz BW, VDD = 3.6 V 1.28 W
L
= 4 Ω, THD = 1%, f = 1 kHz, 20 kHz BW, VDD = 2.5 V 0.56 W
L
= 4 Ω, THD = 10%, f = 1 kHz, 20 kHz BW, VDD = 5.0 V 3.171 W
L
= 4 Ω, THD = 10%, f = 1 kHz, 20 kHz BW, VDD = 3.6 V 1.6 W
L
= 4 Ω, THD = 10%, f = 1 kHz, 20 kHz BW, VDD = 2.5 V 0.72 W
L
= 3 Ω, THD = 1%, f = 1 kHz, 20 kHz BW, VDD = 5.0 V 3.1
L
= 3 Ω, THD = 1%, f = 1 kHz, 20 kHz BW, VDD = 3.6 V 1.52 W
L
= 3 Ω, THD = 1%, f = 1 kHz, 20 kHz BW, VDD = 2.5 V 0.68 W
L
= 3 Ω, THD = 10%, f = 1 kHz, 20 kHz BW, VDD = 5.0 V 3.7
L
= 3 Ω, THD = 10%, f = 1 kHz, 20 kHz BW, VDD = 3.6 V 1.9 W
L
= 3 Ω, THD = 10%, f = 1 kHz, 20 kHz BW, VDD = 2.5 V 0.85 W
L
= 1.4 W, 8 Ω, VDD = 5.0 V 93 %
OUT
= 1 W into 8 Ω, f = 1 kHz, VDD = 5.0 V 0.06 %
OUT
= 0.5 W into 8 Ω, f = 1 kHz, VDD = 3.6 V 0.02 %
OUT
GSM VCM
= 2.5 V ± 100 mV at 217 Hz, output referred 57 dB
1
W
1
W
G = 12 dB 2.0 mV
Guaranteed from PSRR test 2.5 5.5 V
GSM VRIPPLE
= 100 mV at 217 Hz, inputs ac GND, CIN = 0.1 μF 60 dB
VIN = 0 V, no load, VDD = 5.0 V 3.6 mA
= 0 V, no load, VDD = 3.6 V 3.2 mA
IN
= 0 V, no load, VDD = 2.5 V 2.7 mA
IN
= 0 V, load = 8 Ω + 33 μH, VDD = 5.0 V 3.7 mA
IN
= 0 V, load = 8 Ω + 33 μH, VDD = 3.6 V 3.3 mA
IN
= 0 V, load = 8 Ω + 33 μH, VDD = 2.5 V 2.8 mA
IN
= GND
SD
SD = VDD
20 nA
40 kΩ
ISY ≥ 1 mA 1.2 V
ISY ≤ 300 nA 0.5 V
SD rising edge from GND to VDD
SD falling edge from VDD to GND
= GND
SD
28 ms
5 μs
>100 kΩ
Rev. 0 | Page 3 of 20
Page 4
SSM2319
Parameter Symbol Conditions Min Typ Max Unit
NOISE PERFORMANCE
Output Voltage Noise en
Signal-to-Noise Ratio SNR P
= 3.6 V, f = 20 Hz to 20 kHz, inputs are ac grounded,
V
DD
= 12 dB, A weighting
A
V
= 1.4 W, RL = 8 Ω 98 dB
OUT
SYNC OPERATIONAL FREQUENCY 5 12 MHz
1
Although the SSM2319 has good audio quality above 3 W, continuous output power beyond 3 W must be avoided due to device packaging limitations.
40 μV
Rev. 0 | Page 4 of 20
Page 5
SSM2319
ABSOLUTE MAXIMUM RATINGS
Absolute maximum ratings apply at 25°C, unless otherwise noted.
Table 2.
Parameter Rating
Supply Voltage 6 V
Input Voltage V
Common-Mode Input Voltage V
Storage Temperature Range −65°C to +150°C
Operating Temperature Range −40°C to +85°C
Junction Temperature Range −65°C to +165°C
Lead Temperature (Soldering, 60 sec) 300°C
ESD Susceptibility 4 kV
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational section of
this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
DD
DD
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
Table 3.
Package Type PCB θJA θJB Unit
9-Ball, 1.5 mm × 1.5 mm WLCSP 1S0P 162 39 °C/W
2S0P 76 21 °C/W
ESD CAUTION
Rev. 0 | Page 5 of 20
Page 6
SSM2319
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
BALL A1
CORNER
A
B
C
SSM2319
TOP VIEW
BALL SIDE DOW N
(Not to Scale)
Figure 2. Pin Configuration
Table 4. Pin Function Descriptions
Pin No. Mnemonic Description
1A IN− Inverting Input.
1B IN+ Noninverting Input.
1C GND Ground.
SD
2A
Shutdown Input. Active low digital input.
2B SYNCI SYNC Input.
2C VDD Power Supply.
3A SYNCO SYNC Output.
3B OUT− Inverting Output.
3C OUT+ Noninverting Output.
321
07550-002
Rev. 0 | Page 6 of 20
Page 7
SSM2319
TYPICAL PERFORMANCE CHARACTERISTICS
100
RL = 8Ω + 33µH
GAIN = 12dB
10
1
VDD = 2.5V
= 3.6V
V
DD
V
= 5V
DD
100
RL = 8Ω + 33µH
GAIN = 12dB
V
10
1
= 5V
DD
0.1
THD + N (%)
0.01
0.001
0.00010.0010.010.1110
OUTPUT POW ER (W)
Figure 3. THD + N vs. Output Power into RL = 8 Ω + 33 μH, Gain = 12 dB
100
RL = 4Ω + 33µH
GAIN = 12dB
10
1
0.1
THD + N (%)
0.01
0.001
0.00010.0010.010.1110
OUTPUT POW ER (W)
VDD = 2.5V
= 3.6V
V
DD
= 5V
V
DD
Figure 4. THD + N vs. Output Power into RL = 4 Ω + 33 μH, Gain = 12 dB
100
RL = 3Ω + 33µH
GAIN = 12dB
VDD = 2.5V
= 3.6V
10
1
THD + N (%)
V
DD
= 5V
V
DD
0.1
THD + N (%)
0.01
0.001
101001k10k100k
7550-003
1W
0.5W
0.25W
FREQUENCY (Hz)
07550-006
Figure 6. THD + N vs. Frequency, RL = 8 Ω + 33 μH, Gain = 12 dB, VDD = 5 V
100
RL = 4Ω + 33µH
GAIN = 12dB
= 5V
V
DD
10
1
0.1
THD + N (%)
0.01
0.001
101001k10k100k
07550-004
2W
1W
0.5W
FREQUENCY (Hz)
07550-007
Figure 7. THD + N vs. Frequency, RL = 4 Ω + 33 μH, Gain = 12 dB, VDD = 5 V
100
RL = 3Ω + 33µH
GAIN = 12dB
V
= 5V
DD
10
1
0.1
THD + N (%)
3W
1.5W
0.75W
0.1
0.01
0.00010.0010.010.1110
OUTPUT POW ER (W)
Figure 5. THD + N vs. Output Power into RL = 3 Ω + 33 μH, Gain = 12 dB
7550-005
Rev. 0 | Page 7 of 20
0.01
0.001
101001k10k100k
FREQUENCY (Hz)
Figure 8. THD + N vs. Frequency, R
= 3Ω + 33 μH, Gain = 12 dB, VDD = 5 V
L
07550-008
Page 8
SSM2319
100
RL = 8Ω + 33µH
GAIN = 12dB
V
10
DD
= 3.6V
100
RL = 8Ω + 33µH
GAIN = 12dB
V
10
DD
= 2.5V
1
0.1
THD + N (%)
0.01
0.25W
0.125W
0.001
101001k10k100k
0.5W
FREQUENCY (Hz)
07550-009
Figure 9. THD + N vs. Frequency, RL = 8 Ω + 33 μH, Gain = 12 dB, VDD = 3.6 V
100
RL = 4Ω + 33µH
GAIN = 12dB
V
= 3.6V
DD
10
1
0.1
THD + N (%)
0.01
0.001
101001k10k100k
1W
0.5W
0.25W
FREQUENCY (Hz)
07550-010
Figure 10. THD + N vs. Frequency, RL = 4 Ω + 33 μH, Gain = 12 dB, VDD = 3.6 V
100
RL = 3Ω + 33µH
GAIN = 12dB
V
= 3.6V
DD
10
1.5W
1
0.1
THD + N (%)
0.01
0.125W
0.001
0.0625W
101001k10k100k
0.25W
FREQUENCY (Hz)
07550-012
Figure 12. THD + N vs. Frequency, RL = 8 Ω + 33 μH, Gain = 12 dB, VDD = 2.5 V
100
RL = 4Ω + 33µH
GAIN = 12dB
V
= 2.5V
DD
10
1
0.1
THD + N (%)
0.01
0.001
101001k10k100k
0.5W
0.25W
0.125W
FREQUENCY (Hz)
07550-013
Figure 13. THD + N vs. Frequency, RL = 4 Ω + 33 μH, Gain = 12 dB, VDD = 2.5 V
100
RL = 3Ω + 33µH
GAIN = 12dB
V
10
DD
= 2.5V
0.75W
1
0.1
THD + N (%)
0.01
0.001
101001k10k100k
0.75W
0.38W
FREQUENCY (Hz)
07550-011
Figure 11. THD + N vs. Frequency, RL = 3 Ω + 33 μH, Gain = 12 dB, VDD = 3.6 V
Rev. 0 | Page 8 of 20
1
0.1
THD + N (%)
0.01
0.001
101001k10k100k
0.38W
0.2W
FREQUENCY (Hz)
07550-014
Figure 14. THD + N vs. Frequency, RL = 3 Ω + 33 μH, Gain = 12 dB, VDD = 2.5 V
Page 9
SSM2319
3.7
3.5
3.3
3.1
2.9
2.7
SUPPLY CURRENT (mA)
2.5
2.3
RL = 4Ω + 33µH
RL = 3Ω + 33µH
NO LOAD
2.53. 03. 54. 04. 55.05.5
SUPPLY VOLTAGE (V)
RL = 8Ω + 33µH
Figure 15. Supply Current vs. Supply Voltage
4.0
3.5
3.0
2.5
2.0
1.5
OUTPUT PO WER (W)
1.0
0.5
0
2.53.03.54. 04.55.0
DO NOT EXCEE D 3W
CONTINUOUS O UTPUT POWER
10%
1%
SUPPLY VOLTAGE (V)
RL = 3Ω + 33µH
GAIN = 12dB
f = 1kHz
Figu re 16. Maximum Output Power vs. Supply Voltage,
= 3 Ω + 33 μH, Gain = 12 dB
R
L
3.5
3.0
2.5
2.0
1.5
OUTPUT POWER (W)
1.0
0.5
0
2.53.03.54.04.55.0
DO NOT EXCE ED 3W
CONTINUOUS O UTPUT PO WER
10%
1%
SUPPLY VOLTAGE (V)
RL = 4Ω + 33µH
GAIN = 12dB
f = 1kHz
Figu re 17. Maximum Output Power vs. Supply Voltage,
= 4 Ω + 33 μH, Gain = 12 dB
R
L
07550-015
07550-016
07550-017
2.0
RL = 8Ω + 33µH
GAIN = 12dB
1.8
f = 1kHz
1.6
1.4
1.2
1.0
0.8
OUTPUT POWER (W)
0.6
0.4
0.2
0
2.53.03.54.04.55.0
10%
1%
SUPPLY VOLTAGE (V)
Figu re 18. Maximum Output Power vs. Supply Voltage,
The SSM2319 mono Class-D audio amplifier features a filterless
modulation scheme that greatly reduces the external components
count, conserving board space and, thus, reducing systems cost.
The SSM2319 does not require an output filter. Instead, it relies
on the inherent inductance of the speaker coil and the natural
filtering of the speaker and human ear to fully recover the audio
component of the square wave output. Most Class-D amplifiers
use some variation of pulse-width modulation (PWM), but the
SSM2319 uses a Σ-Δ modulation to determine the switching
pattern of the output devices, resulting in a number of important
benefits. Σ-Δ modulators do not produce a sharp peak with many
harmonics in the AM frequency band, as pulse-width modulators
often do. Σ-Δ modulation reduces the amplitude of spectral
components at high frequencies, reducing EMI emission that
may otherwise be radiated by speakers and long cable traces.
Due to the inherent spread-spectrum nature of Σ-Δ
modulation, the need for oscillator synchronization is eliminated
for designs incorporating multiple SSM2319 amplifiers.
The SSM2319 also offers protection circuits for overcurrent and
temperature protection.
GAIN
The SSM2319 has a default gain of 12 dB that can be reduced by
using a pair of external resistors with a value calculated as follows:
External Gain Settings = 160 kΩ/(40 kΩ + R
EXT
)
POP-AND-CLICK SUPPRESSION
Voltage transients at the output of the audio amplifiers can occur
when shutdown is activated or deactivated. Voltage transients as
low as 10 mV can be heard as an audio pop in the speaker. Clicks
and pops can also be classified as undesirable audible transients
generated by the amplifier system and, therefore, as not coming
from the system input signal. Such transients can be generated
when the amplifier system changes its operating mode. For
example, audible transient sources include system power-up/
power-down, mute/unmute, an input source change, and a sample
rate change. The SSM2319 has a pop-and-click suppression
architecture that reduces these output transients, resulting in
noiseless activation and deactivation.
The SSM2319 uses 3-level Σ-Δ output modulation. Each output
is able to swing from GND to VDD and vice versa. Ideally, when
no input signal is present, the output differential voltage is 0 V
because there is no need to generate a pulse. In a real-world
situation, there are always noise sources present. Due to the
constant presence of noise, a differential pulse is generated
in response to this stimulus. A small amount of current flows
into the inductive load when the differential pulse is generated.
However, most of the time, the output differential voltage is 0 V,
due to the Analog Devices, Inc., patented 3-level, Σ-Δ output
modulation feature. This feature ensures that the current flowing
through the inductive load is small.
When the user wants to send an input signal, an output pulse is
generated to follow the input voltage. The differential pulse density
is increased by raising the input signal level. Figure 36 depicts
3-level Σ-Δ output modulation with and without input stimulus.
OUTPUT = 0V
OUT+
OUT–
VOUT
OUTPUT > 0V
OUT+
OUT–
VOUT
OUTPUT < 0V
OUT+
OUT–
VOUT
Figure 36. 3-Level Σ-Δ Output Modulation With and Without Input Stimulus
+5V
0V
+5V
0V
+5V
0V
–5V
+5V
0V
+5V
0V
+5V
0V
+5V
0V
+5V
0V
0V
–5V
07550-034
Rev. 0 | Page 14 of 20
Page 15
SSM2319
LAYOUT
As output power continues to increase, care must be taken to
lay out PCB traces and wires properly between the amplifier,
load, and power supply. A good practice is to use short, wide
PCB tracks to decrease voltage drops and minimize inductance.
Ensure that track widths are at least 200 mil for every inch of
track length for lowest DCR and use 1 oz or 2 oz of copper PCB
traces to further reduce IR drops and inductance. A poor layout
increases voltage drops, consequently affecting efficiency. Use
large traces for the power supply inputs and amplifier outputs
to minimize losses due to parasitic trace resistance.
Proper grounding guidelines help to improve audio performance,
minimize crosstalk between channels, and prevent switching noise
from coupling into the audio signal. To maintain high output swing
and high peak output power, the PCB traces that connect the
output pins to the load and to the supply pins should be as wide
as possible to maintain the minimum trace resistances. It is also
recommended that a large ground plane be used for minimum
impedances.
In addition, good PCB layouts isolate critical analog paths from
sources of high interference. High frequency circuits (analog
and digital) should be separated from low frequency circuits.
Properly designed multilayer PCBs can reduce EMI emissions
and increase immunity to the RF field by a factor of 10 or more
when compared with double-sided boards. A multilayer board
allows a complete layer to be used for the ground plane, whereas
the ground plane side of a double-sided board is often disrupted
by signal crossover.
If the system has separate analog and digital ground and power
planes, the analog ground plane should be underneath the analog
power plane, and, similarly, the digital ground plane should be
underneath the digital power plane. There should be no overlap
between analog and digital ground planes or analog and digital
power planes.
INPUT CAPACITOR SELECTION
The SSM2319 does not require input coupling capacitors if the
input signal is biased from 1.0 V to V
are required if the input signal is not biased within this recommended input dc common-mode voltage range, if high-pass
filtering is needed, or if using a single-ended source. If highpass filtering is needed at the input, the input capacitor, along
with the input resistor of the SSM2319, form a high-pass filter
whose corner frequency is determined by
f
= 1/{2π × (40 kΩ + R
C
EXT
The input capacitor can significantly affect the performance of
the circuit. Not using input capacitors degrades both the output
offset of the amplifier and the PSRR performance.
− 1.0 V. Input capacitors
DD
) × CIN}
Rev. 0 | Page 15 of 20
POWER SUPPLY DECOUPLING
To ensure high efficiency, low THD, and high PSRR, proper
power supply decoupling is necessary. Noise transients on the
power supply lines are short-duration voltage spikes. Although
the actual switching frequency can range from 10 kHz to 100 kHz,
these spikes can contain frequency components that extend into
the hundreds of megahertz. The power supply input needs to be
decoupled with a good quality, low ESL, low ESR capacitor, usually
of around 4.7 μF. This capacitor bypasses low frequency noises
to the ground plane. For high frequency transients noises, use a
0.1 μF capacitor as close as possible to the VDD pin of the device.
Placing the decoupling capacitor as close as possible to the
SSM2319 helps to maintain efficient performance.
SYNCRONIZATION (SYNC) OPERATION
SYNC is the feature that allows an external clock signal to control
the modulator of the SSM2319. The SSM2319 can act in standalone
mode, act as a master device, or act as a slave device. Although
the inherent random switching frequency of the Analog Devices
patented 3-level PDM modulation virtually eliminates the need for
SYNC, this feature can be activated in the event that end users are
concerned about clock intermodulation (beating effect) of several
amplifiers in close proximity.
Another use for the SYNC feature is its ability to adjust modulator
frequency to move harmonic interference to a less sensitive
frequency band in certain applications with very delicate
interference requirements.
Although the synchronization frequency operates from 5 MHz to
12 MHz, the optimal operating range is 6 MHz to 9 MHz.
Modulator synchronization is initiated after the internal shutdown signal is released. SYNCO buffers the internal oscillator
clock with a delay of 127 clock cycles.
When synchronizing several SSM2319 amplifiers, configure
them in a daisy-chain configuration, as shown in Figure 35.
Using this configuration causes a small delay in the SYNCO-toSYNCO transitions of multiple SSM2319s, preventing large
surges of instantaneous current and reducing excessive loading
of the power supply.
When configuring one device to act as a master device, it is
mandatory that the connection from SYNCO to SYCNI be less
than 1 mm. As in many digital systems, to maintain signal integrity
when interfacing several clocking systems, users must insert series
dumping resistors close to the SYNCO pin if long trace lengths
are used for synchronization connections. A typical value used
is 750 Ω. The series dumping resistor should be placed as close
to the SYNCO pin as possible. If careful layout practices are
followed to minimize signal trace routing from the SYNCO pin
of one device to the SYNCI pin of another, a dumping resistor is
not necessary. If the SYNC feature is not used, or if the SYNC
feature is not interfacing the SYNCO pin to an external device,
it is recommended that the SYNCO pin be floated.
Page 16
SSM2319
L
L
Operating Modes
The SYNC operating modes include the following:
•Initial SYNC startup. An internal reference signal, REF, is
released after one complete internal clock cycle (MCLK).
After REF is released, another internal signal, MOD, waits
127 internal clock cycles. This operates as a training signal
to determine the SYNCI/SYNCO connection. During this
time, SYNCO is the internal clock signal.
•SYNCI = external clock. SYNCO is a buffered clock output
sourced from an external clock signal. One clock cycle after
the internal modulator detect signal is released, an irregular
pulse appears on MCLK before the first buffered output signal
begins on SYNCO, as shown in Figure 39.
SD
SIGNAL
REF
MOD
INTERNAL
•SYNCI = GND or VDD. SYNCO stops generating pulses.
The modulator is controlled by an internal clock signal, as
shown in Figure 37.
SD
INTERNA
SIGNAL
REF
MOD
SYNCI
SYNCO
MCLK
SYNCI = GND
Figure 37. SYNCI = GND or VDD
•SYNCI = SYNCO. SYNCO is the delayed clock signal of
SYNCI, as shown in Figure 38.
SD
SIGNAL
SYNCO
SYNCI = SYNCO
REF
MOD
SYNCI
MCLK
Figure 38. SYNCI = SYNCO
INTERNAL
SYNCI
SYNCO
MCLK
SYNCI = CLKIN
07550-039
Figure 39. SYNCI = External Clock
•SYNCI = GND, transitions to clock. When the SYNCI pin is
connected to GND first but then transitions to a clock signal,
SYNCO generates several internal clock signals before finally
being synchronized to the external clock signal, as shown
in Figure 40.
07550-037
SD
INTERNA
REF
SIGNAL
MOD
SYNCI
SYNCO
MCLK
SYNCI = GND TO CLKIN
07550-040
Figure 40. SYNCI = GND to Clock Input
•SYNCI = CLK, transitions to GND. When SYNCI is
connected to a clock signal but then transitions to GND,
07550-038
the SYNCO pin immediately stops generating a clock signal.
After a short clock loss detect time, the internal modulator
synchronizes to the internal clock signal, as shown
in Figure 41.