Datasheet SSM2315 Datasheet (ANALOG DEVICES)

Page 1
Filterless, High Efficiency,
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FEATURES

Filterless Class-D amplifier with Σ-Δ modulation No sync necessary when using multiple Class-D amplifiers
from Analog Devices, Inc.
3 W into 3 Ω load and 1.4 W into 8 Ω load at 5.0 V supply
with <1% total harmonic distortion (THD + N) 93% efficiency at 5.0 V, 1.4 W into 8 Ω speaker >103 dB signal-to-noise ratio (SNR) Single-supply operation from 2.5 V to 5.5 V 20 nA ultralow shutdown current Short-circuit and thermal protection Available in 9-ball, 1.5 mm × 1.5 mm WLCSP Pop-and-click suppression Built-in resistors reduce board component count Default fixed 6 dB or user adjustable gain setting

APPLICATIONS

Mobile phones MP3 players Portable gaming Portable electronics Educational toys

GENERAL DESCRIPTION

The SSM2315 is a fully integrated, high efficiency, Class-D audio amplifier. It is designed to maximize performance for mobile phone applications. The application circuit requires a minimum of external components and operates from a single 2.5 V to 5.5 V supply. It is capable of delivering 3 W of continuous output power with <1% THD + N driving a 3 Ω load from a 5.0 V supply.

FUNCTIONAL BLOCK DIAGRAM

Mono 3 W Class-D Audio Amplifier
SSM2315
The SSM2315 features a high efficiency, low noise modulation scheme that requires no external LC output filters. The modulation continues to provide high efficiency even at low output power. It operates with 93% efficiency at 1.4 W into 8 Ω or 85% efficiency at 3 W into 3 Ω from a 5.0 V supply and has an SNR of >103 dB. Spread-spectrum pulse density modulation is used to provide lower EMI-radiated emissions compared with other Class-D architectures.
The SSM2315 has a micropower shutdown mode with a typical shutdown current of 20 nA. Shutdown is enabled by applying
SD
pin.
/2.
DD
VBATT
2.5V TO 5.5V
10µF
a logic low to the
The device also includes pop-and-click suppression circuitry. This suppression circuitry minimizes voltage glitches at the output during turn-on and turn-off, reducing audible noise on activation and deactivation.
The fully differential input of the SSM2315 provides excellent rejection of common-mode noise on the input. Input coupling capacitors can be omitted if the dc input common-mode voltage is approximately V
The default gain of the SSM2315 is 6 dB, but users can reduce the gain by using a pair of external resistors (see the Gain section).
The SSM2315 is specified over the industrial temperature range of
−40°C to +85°C. It has built-in thermal shutdown and output short-circuit protection. It is available in a 9-ball, 1.5 mm × 1.5 mm wafer level chip scale package (WLCSP).
0.1µF
SSM2315
AUDIO IN+
AUDIO IN–
SHUTDOWN
*INPUT CAPS ARE OPTI ONAL IF I NPUT DC COMMO N-MODE
VOLTAGE IS APPROXIMATELY V
Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
47nF*
47nF*
IN+
IN–
SD
80k
80k
/2.
DD
MODULATOR
BIAS
FET
DRIVER
GND
VDD
OUT+
OUT–
POP/CLICK
SUPPRESSION
6857-001
160k
(Σ-Δ)
160k
INTERNAL
OSCILLATOR
Figure 1.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 ©2008 Analog Devices, Inc. All rights reserved.
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TABLE OF CONTENTS

Features .............................................................................................. 1
Typical Application Circuits ......................................................... 11
Applications ....................................................................................... 1
General Description ......................................................................... 1
Functional Block Diagram .............................................................. 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
Absolute Maximum Ratings ............................................................ 4
Thermal Resistance ...................................................................... 4
ESD Caution .................................................................................. 4
Pin Configuration and Function Descriptions ............................. 5
Typical Performance Characteristics ............................................. 6

REVISION HISTORY

8/08—Rev. 0 to Rev. A
Changes to Efficiency and Total Harmonic
Distortion + Noise Parameters ....................................................... 3
Changes to Ordering Guide .......................................................... 14
2/08—Revision 0: Initial Version
Theory of Operation ...................................................................... 12
Overview ..................................................................................... 12
Gain .............................................................................................. 12
Pop-and-Click Suppression ...................................................... 12
Output Modulation Description .............................................. 12
Layout .......................................................................................... 13
Input Capacitor Selection .......................................................... 13
Proper Power Supply Decoupling ............................................ 13
Outline Dimensions ....................................................................... 14
Ordering Guide .......................................................................... 14
Rev. A | Page 2 of 16
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SPECIFICATIONS

VDD = 5.0 V, TA = 25oC, RL = 8 Ω + 33 μH, unless otherwise noted.
Table 1.
Parameter Symbol Conditions1 Min Typ Max Unit
DEVICE CHARACTERISTICS
Output Power P
O
R
R
R
R
R
R
R
R
R
R
R
Efficiency η PO = 1.4 W, RL = 8 Ω + 33 μH, VDD = 5.0 V 93 %
Total Harmonic Distortion + Noise THD + N PO = 1 W, RL = 8 Ω + 33 μH, f = 1 kHz, VDD = 5.0 V 0.004 %
P
Input Common-Mode Voltage Range VCM 1.0 VDD − 1.0 V
Common-Mode Rejection Ratio CMRR
Average Switching Frequency fSW 280 kHz
Differential Output Offset Voltage V
OOS
POWER SUPPLY
Supply Voltage Range V
DD
Power Supply Rejection Ratio PSRR VDD = 2.5 V to 5.0 V, dc input floating 70 85 dB
PSRR
Supply Current I
SY
V
V
Shutdown Current ISD
GAIN CONTROL
Closed-Loop Gain Gain 6 dB
Differential Input Impedance Z
IN
SHUTDOWN CONTROL
Input Voltage High V
Input Voltage Low V
Turn-On Time t
Turn-Off Time t
Output Impedance Z
WU
SD
IH
IL
OUT
NOISE PERFORMANCE
Output Voltage Noise en V
Signal-to-Noise Ratio SNR PO = 1.4 W, RL = 8 Ω 103 dB
1
Note that although the SSM2315 has good audio quality above 3 W, continuous output power beyond 3 W must be avoided due to device packaging limitations.
2
This value represents measured performance; packaging limitations must not be exceeded.
RL = 8 Ω, THD = 1%, f = 1 kHz, 20 kHz BW, VDD = 5.0 V 1.48 W
= 8 Ω, THD = 1%, f = 1 kHz, 20 kHz BW, VDD = 3.6 V 0.75 W
L
= 8 Ω, THD = 10%, f = 1 kHz, 20 kHz BW, VDD = 5.0 V 1.84 W
L
= 8 Ω, THD = 10%, f = 1 kHz, 20 kHz BW, VDD = 3.6 V 0.94 W
L
= 4 Ω, THD = 1%, f = 1 kHz, 20 kHz BW, VDD = 5.0 V 2.72 W
L
= 4 Ω, THD = 1%, f = 1 kHz, 20 kHz BW, VDD = 3.6 V 1.38 W
L
= 4 Ω, THD = 10%, f = 1 kHz, 20 kHz BW, VDD = 5.0 V 3.402 W
L
= 4 Ω, THD = 10%, f = 1 kHz, 20 kHz BW, VDD = 3.6 V 1.72 W
L
= 3 Ω, THD = 1%, f = 1 kHz, 20 kHz BW, VDD = 5.0 V 3.43 W
L
= 3 Ω, THD = 1%, f = 1 kHz, 20 kHz BW, VDD = 3.6 V 1.72 W
GSM VCM
L
= 3 Ω, THD = 10%, f = 1 kHz, 20 kHz BW, VDD = 5.0 V
L
= 3 Ω, THD = 10%, f = 1 kHz, 20 kHz BW, VDD = 3.6 V 2.14 W
L
= 0.5 W, RL = 8 Ω + 33 μH, f = 1 kHz, VDD = 3.6 V 0.004 %
O
= 2.5 V ± 100 mV at 217 Hz, output referred 55 dB
4.28
2
Gain = 6 dB 2.0 mV
Guaranteed from PSRR test 2.5 5.5 V
GSM VRIPPLE
= 100 mV at 217 Hz, inputs ac GND, CIN = 0.1 μF 60 dB
VIN = 0 V, no load, VDD = 5.0 V 3.2 mA
= 0 V, no load, VDD = 3.6 V 2.8 mA
IN
= 0 V, no load, VDD = 2.5 V 2.4 mA
IN
V
= 0 V, load = 8 Ω+ 33 μH, VDD = 5.0 V
IN
V
= 0 V, load = 8 Ω+ 33 μH, VDD = 3.6 V
IN
V
= 0 V, load = 8 Ω+ 33 μH, VDD = 2.5 V
IN
SD
= GND
SD
= VDD
3.3 mA
2.9 mA
2.4 mA 20 nA
80
ISY ≥ 1 mA 1.2 V ISY ≤ 300 nA 0.5 V SD
rising edge from GND to VDD
SD
falling edge from VDD to GND
SD
= GND
= 3.6 V, f = 20 Hz to 20 kHz, inputs are ac-grounded,
DD
7 ms 5 μs >100
21 μV rms
gain = 6 dB, A-weighted
W
Rev. A | Page 3 of 16
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ABSOLUTE MAXIMUM RATINGS

Absolute maximum ratings apply at 25°C, unless otherwise noted.
Table 2.
Parameter Rating
Supply Voltage 6 V Input Voltage V Common-Mode Input Voltage V Continuous Output Power 3 W Storage Temperature Range −65°C to +150°C Operating Temperature Range −40°C to +85°C Junction Temperature Range −65°C to +165°C Lead Temperature (Soldering, 60 sec) 300°C
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
DD
DD

THERMAL RESISTANCE

θJA is specified for the worst-case conditions, that is, a device soldered in a circuit board for surface-mount packages.
Table 3. Thermal Resistance
Package Type PCB θJA θJB Unit
9-ball, 1.5 mm × 1.5 mm WLCSP 1S0P 162 39 °C/W 2S0P 76 21 °C/W

ESD CAUTION

Rev. A | Page 4 of 16
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PIN CONFIGURATION AND FUNCTION DESCRIPTIONS

BALL A1 CORNER
A
B
C
SSM2315
TOP VIEW
BALL SIDE DOW N
(Not to Scale)
Figure 2. Pin Configuration
Table 4. Pin Function Descriptions
Pin No. Mnemonic Description
2C 2A GND Ground.
1A IN+ Noninverting Input. 1C IN− Inverting Input. 3C OUT+ Noninverting Output. 1B VDD Power Supply. 3B GND Ground. 3A OUT− Inverting Output. 2B PVDD Power Supply.
SD
Shutdown Input. Active low digital input.
321
06857-002
Rev. A | Page 5 of 16
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TYPICAL PERFORMANCE CHARACTERISTICS

100
RL = 8 + 33µH GAIN = 6dB
10
V
= 3.6V
DD
V
= 2.5V
DD
100
10
VDD = 5V GAIN = 6dB
= 8 + 33µH
R
L
1
0.1
THD + N (%)
= 5V
V
0.01
0.001
0.0001 0.001 0.01 0.1 1 10
OUTPUT POWER (W)
DD
Figure 3. THD + N vs. Output Power, RL = 8 Ω + 33 μH, Gain = 6 dB
100
RL = 4 + 33µH GAIN = 6dB
V
= 2.5V
10
1
0.1
THD + N (%)
0.01
0.001
0.0001 0.001 0.01 0.1 1 10
OUTPUT POWER (W)
DD
= 3.6V
V
DD
= 5V
V
DD
Figure 4. THD + N vs. Output Power, RL = 4 Ω + 33 μH, Gain = 6 dB
1
0.1
THD + N (%)
0.01
0.001
0.0001 10 100 1k 10k 100k
06857-003
FREQUENCY (Hz)
0.25W
0.5W
1W
06857-006
Figure 6. THD + N vs. Frequency, VDD = 5 V, RL = 8 Ω + 33 μH, Gain = 6 dB
100
VDD = 5V GAIN = 6dB
= 4 + 33µH
R
L
10
1
0.1
THD + N (%)
0.01
0.001
0.0001 10 100 1k 10k 100k
06857-004
FREQUENCY (Hz)
0.5W
1W
2W
06857-007
Figure 7. THD + N vs. Frequency, VDD = 5 V, RL = 4 Ω + 33 μH, Gain = 6 dB
100
RL = 3 + 33µH GAIN = 6dB
V
= 2.5V
10
1
0.1
THD + N (%)
0.01
0.001
0.0001 0.001 0.01 0.1 1 10
OUTPUT POWER (W)
DD
V
DD
V
= 3.6V
= 5V
DD
06857-005
Figure 5. THD + N vs. Output Power, RL = 3 Ω + 33 μH, Gain = 6 dB
Rev. A | Page 6 of 16
100
VDD = 5V GAIN = 6dB
= 3 + 33µH
R
L
10
1
0.1
THD + N (%)
0.01
0.001
0.0001 10 100 1k 10k 100k
FREQUENCY (Hz)
3W
0.5W
0.75W
Figure 8. THD + N vs. Frequency, VDD = 5 V, RL = 3 Ω + 33 μH, Gain = 6 dB
06857-008
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100
10
VDD = 3.6V GAIN = 6dB
= 8 + 33µH
R
L
100
10
VDD = 2.5V GAIN = 6dB
= 8 + 33µH
R
L
1
0.1
THD + N (%)
0.01
0.001 10 100 1k 10k 100k
0.5W
FREQUENCY (Hz)
0.125W
0.25W
06857-009
Figure 9. THD + N vs. Frequency, VDD = 3.6 V, RL = 8 Ω + 33 μH, Gain = 6 dB
100
VDD = 3.6V GAIN = 6dB
= 4 + 33µH
R
L
10
1
0.1
THD + N (%)
0.01
0.001 10 100 1k 10k 100k
0.5W
0.25W
FREQUENCY (Hz)
1W
06857-010
Figure 10. THD + N vs. Frequency, VDD = 3.6 V, RL = 4 Ω + 33 μH, Gain = 6 dB
1
0.1
THD + N (%)
0.01
0.001 10 100 1k 10k 100k
0.25W
FREQUENCY (Hz)
0.125W0.63W
06857-012
Figure 12. THD + N vs. Frequency, VDD = 2.5 V, RL = 8 Ω + 33 μH, Gain = 6 dB
100
VDD = 2.5V GAIN = 6dB
= 4 + 33µH
R
L
10
1
0.5W
0.1
THD + N (%)
0.01
0.001 10 100 1k 10k 100k
0.25W
0.125W
FREQUENCY (Hz)
06857-013
Figure 13. THD + N vs. Frequency, VDD = 2.5 V, RL = 4 Ω + 33 μH, Gain = 6 dB
100
VDD = 3.6V GAIN = 6dB
= 3 + 33µH
R
L
10
1
0.1
THD + N (%)
0.75W
0.01
0.001 10 100 1k 10k 100k
FREQUENCY (Hz)
1.5W
0.38W
06857-011
Figure 11. THD + N vs. Frequency, VDD = 3.6 V, RL = 3 Ω + 33 μH, Gain = 6 dB
Rev. A | Page 7 of 16
100
VDD = 2.5V GAIN = 6dB
= 3 + 33µH
R
L
10
1
0.1
THD + N (%)
0.01
0.001 10 100 1k 10k 100k
FREQUENCY (Hz)
0.75W
0.375W
0.188W
06857-014
Figure 14. THD + N vs. Frequency, VDD = 2.5 V, RL = 3 Ω + 33 μH, Gain = 6 dB
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4.1
3.9
3.7
3.5
3.3
3.1
SUPPLY CURRENT (mA)
2.9
2.7
2.5
2.5 3.0 3. 5 4.0 4.5 5.0 5.5 6.0
RL = 3 + 33µH
R
= 4 + 33µH
L
SUPPLY VOLTAGE (V)
NO LOAD
Figure 15. Supply Current vs. Supply Voltage
06857-015
4.5 FREQUENCY = 1kHz
GAIN = 6dB
4.0
= 3 + 33µH
R
L
3.5
3.0
2.5
2.0
1.5
OUTPUT POWER (W)
1.0
0.5
0
2.5 3.0 3.5 4.0 4.5 5.0
DO NOT EXCE ED 3W
CONTINUO US OUTPUT POWER
SUPPLY VOLTAGE (V)
10%
1%
Figure 18. Maximum Output Power vs. Supply Voltage,
= 3 Ω + 33 μH, Gain = 6 dB
R
L
06857-018
2.0 FREQUENCY = 1kHz
GAIN = 6dB
1.8
= 8 + 33µH
R
L
1.6
1.4
1.2
1.0
0.8
OUTPUT POWER (W)
0.6
0.4
0.2
0
2.5 3.0 3.5 4.0 4.5 5.0
10%
1%
SUPPLY VOLTAGE (V)
Figure 16. Maximum Output Power vs. Supply Voltage,
= 8 Ω + 33 μH, Gain = 6 dB
R
L
4.0 FREQUENCY = 1kHz
GAIN = 6dB
3.5
= 4 + 33µH
R
L
3.0
2.5
2.0
1.5
OUTPUT POWER (W)
1.0
0.5
0
DO NOT EXC EED 3W CONT INUOUS O UTPUT POWER
10%
1%
2.5 3.0 3.5 4.0 4.5 5.0
SUPPLY VOLTAGE (V)
Figure 17. Maximum Output Power vs. Supply Voltage,
= 4 Ω + 33 μH, Gain = 6 dB
R
L
100
V
= 2.5V
DD
90
80
70
60
50
40
EFFICIE NCY (%)
30
20
10
0
01.81.61.41.21.00.80.60.40.2
06857-016
= 3.6V
V
DD
OUTPUT POWER (W)
= 5V
V
DD
RL = 8 + 33µH
06857-019
Figure 19. Efficiency vs. Output Power, RL = 8 Ω + 33 μH
100
90
80
70
60
50
40
EFFICIE NCY (%)
30
20
10
0
03.23.02.82.62.42.22.01.81.61.41.21.00.80.60.40.2
06857-017
V
= 2.5V VDD = 3.6V VDD = 5V
DD
OUTPUT POWER (W)
RL = 4 + 33µH
06857-020
Figure 20. Efficiency vs. Output Power, RL = 4 Ω + 33 μH
Rev. A | Page 8 of 16
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SSM2315
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0.16
0.14
0.12
VDD = 5V
= 8 + 33µH
R
L
0.25
0.20
VDD = 3.6V
= 4 + 33µH
R
L
0.10
0.08
0.06
POWER DISSIPATIO N (W)
0.04
0.02
0
01.81.61.41.21.00.80.60.40.2
OUTPUT POWER (W)
Figure 21. Power Dissipation vs. Output Power, R
0.40 VDD = 5V
= 4 + 33µH
R
L
0.35
0.30
0.25
0.20
0.15
POWER DISSIPATIO N (W)
0.10
0.05
= 8 Ω + 33 μH at VDD = 5.0 V
L
0.15
0.10
POWER DISSIPATIO N (W)
0.05
0
01.61.41.21.00.80.60.40.2
06857-021
OUTPUT POWER (W)
06857-024
Figure 24. Power Dissipation vs. Output Power, RL = 4 Ω + 33 μH at VDD = 3.6 V
400
350
300
250
200
150
SUPPLY CURRENT (mA)
100
50
RL = 8 + 33µH
VDD = 2.5V
V
DD
= 3.6V
= 5V
V
DD
0
03.02.52.01.51.00.5
OUTPUT POWER (W)
Figure 22. Power Dissipation vs. Output Power, R
0.09 VDD = 3.6V
= 8 + 33µH
R
L
0.08
0.07
0.06
0.05
0.04
0.03
POWER DISSIPATIO N (W)
0.02
0.01
0
00.90.70.5 0.80.60.40.30.20.1
OUTPUT POWER (W)
Figure 23. Power Dissipation vs. Output Power, R
= 4 Ω + 33 μH at VDD = 5.0 V
L
= 8 Ω + 33 μH at VDD = 3.6 V
L
0
01.81.61.41.21.00.80.60.40.2
06857-022
OUTPUT POWER (W)
06857-025
Figure 25. Supply Current vs. Output Power, RL = 8 Ω + 33 μH
800
RL = 4 + 33µH
700
600
500
400
300
SUPPLY CURRENT (mA)
200
100
06857-023
0
03.02.82.62.42.22.01.81.61.41.21.00.80.60.40.2
V
DD
= 2.5V
= 3.6V
V
DD
OUTPUT POWER (W)
= 5V
V
DD
06857-026
Figure 26. Supply Current vs. Output Power, RL = 4 Ω + 33 μH
Rev. A | Page 9 of 16
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0
–10
–20
–30
–40
–50
PSRR (dB)
–60
–70
–80
–90
–100
10 100k10k1k100
FREQUENCY (Hz)
Figure 27. Power Supply Rejection Ratio (PSRR) vs. Frequency
06857-027
8
7
6
–2 20181614121086420
SD INPUT
OUTPUT
TIME (ms)
06857-029
5
4
3
2
VOLTAGE (V)
1
0
–1
–2
Figure 29. Turn-On Response
0
–10
–20
–30
–40
–50
CMRR (dB)
–60
–70
–80
–90
–100
10 100k10k1k100
FREQUENCY (Hz)
Figure 28. Common-Mode Rejection Ratio (CMRR) vs. Frequency
8
7
6
5
4
3
2
VOLTAGE (V)
1
0
–1
–2
–90 9070503010–10–30–50–70
06857-028
TIME (µs)
OUTPUT
SD INPUT
06857-030
Figure 30. Turn-Off Response
Rev. A | Page 10 of 16
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SSM2315
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A
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TYPICAL APPLICATION CIRCUITS

EXTERNAL GAIN SETT INGS = 160kΩ/(80k Ω + R
EXT
10µF
)
0.1µF VBATT
2.5V TO 5.5V
FET
DRIVER
GND
VDD
OUT+
OUT–
POP/CLICK
SUPPRESSION
6857-031
47nF*
SSM2315
R
47nF*
EXT
R
EXT
UDIO IN+
UDIO IN–
SHUTDOWN
*INPUT CAPS ARE OPTIONAL IF INPUT DC COMMON-MO DE
VOLTAGE IS APPROXIMATELY V
IN+
IN–
SD
80k
80k
DD
MODULATOR
BIAS
/2.
160k
(Σ-Δ)
160k
INTERNAL
OSCILLATOR
Figure 31. Differential Input Configuration, User-Adjustable Gain
EXTERNAL G AIN SETTINGS = 160kΩ/(80kΩ + R
SSM2315
47nF
AUDIO IN+
47nF
R
EXT
R
EXT
IN+
IN–
80k
80k
)
EXT
10µF
160k
MODULATOR
(Σ-Δ)
160k
0.1µF
DRIVER
FET
VDD
VBATT
2.5V TO 5.5V
OUT+
OUT–
SHUTDOWN
SD
BIAS
INTERNAL
OSCILLATOR
POP/CLICK
SUPPRESSION
GND
6857-032
Figure 32. Single-Ended Input Configuration, User-Adjustable Gain
Rev. A | Page 11 of 16
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THEORY OF OPERATION

OVERVIEW

The SSM2315 mono Class-D audio amplifier features a filterless modulation scheme that greatly reduces the external component count, conserving board space and, thus, reducing systems cost. The SSM2315 does not require an output filter but, instead, relies on the inherent inductance of the speaker coil and the natural filtering of the speaker and human ear to fully recover the audio component of the square wave output. Most Class-D amplifiers use some variation of pulse-width modulation (PWM), but the SSM2315 uses a Σ-Δ modulation to determine the switching pattern of the output devices, resulting in a number of important benefits. Σ-Δ modulators do not produce a sharp peak with many harmonics in the AM frequency band, as pulse-width modulators often do. Σ-Δ modulation provides the benefits of reducing the amplitude of spectral components at high frequencies, that is, reducing EMI emission that may otherwise be radiated by speakers and long cable traces. The SSM2315 does not require external EMI filtering for twisted speaker cable lengths shorter than 10 cm. Due to the inherent spread spectrum nature of Σ-Δ modulation, the need for oscillator synchronization is eliminated for designs incorporating multiple SSM2315 amplifiers.

OUTPUT MODULATION DESCRIPTION

The SSM2315 uses three-level, Σ-Δ output modulation. Each output can swing from GND to VDD and vice versa. Ideally, when no input signal is present, the output differential voltage is 0 V because there is no need to generate a pulse. In a real world situation, there are always noise sources present.
Due to this constant presence of noise, a differential pulse is generated, when required, in response to this stimulus. A small amount of current flows into the inductive load when the differen­tial pulse is generated.
However, most of the time, output differential voltage is 0 V, due to the Analog Devices patented, three-level, Σ-Δ output modulation. This feature ensures that the current flowing through the inductive load is small.
When the user wants to send an input signal, an output pulse is generated to follow the input voltage. The differential pulse density is increased by raising the input signal level. Figure 33 depicts three-level, Σ-Δ output modulation with and without input stimulus.
The SSM2315 also offers protection circuits for overcurrent and temperature protection.

GAIN

The SSM2315 has a default gain of 6 dB that can be reduced by using a pair of external resistors with a value calculated as follows:
External Gain Settings = 160 kΩ/(80 kΩ + R
EXT
)

POP-AND-CLICK SUPPRESSION

Voltage transients at the output of audio amplifiers may occur when shutdown is activated or deactivated. Voltage transients as low as 10 mV can be heard as an audio pop in the speaker. Clicks and pops can also be classified as undesirable audible transients generated by the amplifier system and, therefore, as not coming from the system input signal. Such transients may be generated when the amplifier system changes its operating mode. For example, the following may be sources of audible transients: system power-up and power-down, mute and unmute, input source change, and sample rate change. The SSM2315 has a pop-and-click suppression architecture that reduces these output transients, resulting in noiseless activation and deactivation.
OUTPUT = 0V
OUT+
OUT–
VOUT
OUTPUT > 0V
OUT+
OUT–
VOUT
OUTPUT < 0V
OUT+
OUT–
VOUT
Figu re 33. Three-L evel, Σ-Δ Output Modulation With and Without Input Stimulus
+5V
0V
+5V
0V +5V
0V
–5V
+5V
0V
+5V
0V
+5V
0V
+5V
0V
+5V
0V
0V
–5V
06857-033
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LAYOUT

As output power continues to increase, care must be taken to lay out PCB traces and wires properly among the amplifier, load, and power supply. A good practice is to use short, wide PCB tracks to decrease voltage drops and to minimize inductance. Ensure that track widths are at least 200 mil for every inch of track length for lowest DCR, and use 1 oz or 2 oz of copper PCB traces to further reduce IR drops and inductance. A poor layout increases voltage drops, consequently affecting efficiency. Use large traces for the power supply inputs and amplifier outputs to minimize losses due to parasitic trace resistance.
Proper grounding guidelines help improve audio performance, minimize crosstalk between channels, and prevent switching noise from coupling into the audio signal. To maintain high output swing and high peak output power, the PCB traces that connect the output pins to the load and supply pins should be as wide as possible to maintain the minimum trace resistances. It is also recommended that a large ground plane be used for minimum impedances.
In addition, good PCB layouts isolate critical analog paths from sources of high interference. High frequency circuits (analog and digital) should be separated from low frequency circuits.
Properly designed multilayer printed circuit boards can reduce EMI emission and increase immunity to the RF field by a factor of 10 or more, compared with double-sided boards. A multilayer board allows a complete layer to be used for the ground plane, whereas the ground plane side of a double-sided board is often disrupted with signal crossover.
If the system has separate analog and digital ground and power planes, the analog ground plane should be underneath the analog power plane. Similarly, the digital ground plane should be underneath the digital power plane. There should be no overlap between analog and digital ground planes or analog and digital power planes.

INPUT CAPACITOR SELECTION

The SSM2315 does not require input coupling capacitors if the input signal is biased from 1.0 V to V required if the input signal is not biased within this recommended input dc common-mode voltage range, if high-pass filtering is needed, or if a single-ended source is used. If high-pass filtering is needed at the input, the input capacitor and the input resistor of the SSM2315 form a high-pass filter whose corner frequency is determined by the following equation:
f
= 1/(2π × RIN × CIN)
C
The input capacitor can significantly affect the performance of the circuit. Not using input capacitors degrades both the output offset of the amplifier and the dc PSRR performance.
− 1.0 V. Input capacitors are
DD

PROPER POWER SUPPLY DECOUPLING

To ensure high efficiency, low total harmonic distortion (THD), and high PSRR, proper power supply decoupling is necessary. Noise transients on the power supply lines are short-duration voltage spikes. Although the actual switching frequency can range from 10 kHz to 100 kHz, these spikes can contain frequency components that extend into the hundreds of megahertz. The power supply input needs to be decoupled with a good quality, low ESL, low ESR capacitor, usually of around 4.7 μF. This capacitor bypasses low frequency noises to the ground plane. For high frequency transients noises, use a 0.1 μF capacitor as close as possible to the VDD pin of the device. Placing the decoupling capacitor as close as possible to the SSM2315 helps maintain efficient performance.
Rev. A | Page 13 of 16
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OUTLINE DIMENSIONS

0.655
0.600
0.545
SEATING PLANE
0.350
0.320
0.290
123
A
B
A1 BALL CORNER
1.490
1.460 SQ
1.430
C
101507-C
TOP VIEW
(BALL SI DE DOWN)
0.385
0.360
0.335
0.50 BALL PI TCH
0.270
0.240
0.210
BOTTOM VIEW
(BALL SIDE UP)
Figure 34. 9-Ball Wafer Level Chip Scale Package [WLCSP]
(CP-9-2)
Dimensions shown in millimeters

ORDERING GUIDE

Model Temperature Range Package Description Package Option Branding
SSM2315CBZ-R21 −40°C to +85°C 9-Ball Wafer Level Chip Scale Package [WLCSP] CB-9-2 Y0P SSM2315CBZ-REEL1 −40°C to +85°C 9-Ball Wafer Level Chip Scale Package [WLCSP] CB-9-2 Y0P SSM2315CBZ-REEL71 −40°C to +85°C 9-Ball Wafer Level Chip Scale Package [WLCSP] CB-9-2 Y0P SSM2315-EVALZ1 Evaluation Board
1
Z = RoHS Compliant Part.
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NOTES
Rev. A | Page 15 of 16
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NOTES
©2008 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D06857-0-8/08(A)
Rev. A | Page 16 of 16
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