Filterless Class-D amplifier with Σ-Δ modulation
No sync necessary when using multiple Class-D amplifiers
from Analog Devices, Inc.
2.8 W into 4 Ω load and 1.6 W into 8 Ω load at 5.0 V supply
with <10% total harmonic distortion (THD)
89% efficiency at 5.0 V, 1.3 W into 8 Ω speaker
>98 dB signal-to-noise ratio (SNR)
Single-supply operation from 2.5 V to 5.5 V
20 nA ultralow shutdown current
Short-circuit and thermal protection
Available in 8-lead, 3 mm × 3 mm LFCSP and MSOP
Pop-and-click suppression
Built-in resistors reduce board component count
Fixed and user-adjustable gain configurations
APPLICATIONS
Mobile phones
MP3 players
Portable gaming
Portable electronics
Educational toys
GENERAL DESCRIPTION
The SSM2305 is a fully integrated, high efficiency, Class-D
audio amplifier designed to maximize performance for mobile
phone applications. The application circuit requires a minimum
of external components and operates from a single 2.5 V to 5.5 V
supply. It is capable of delivering 2.2 W of continuous output
power with less than 1% THD + N driving a 4 Ω load from a
5.0 V supply. It has built-in thermal shutdown and output short-
circuit protection.
SSM2305
The SSM2305 features a high efficiency, low noise modulation
scheme that does not require external LC output filters. The modulation provides high efficiency even at low output power. The
SSM2305 operates with 90% efficiency at 1.3 W into 8 Ω or 83%
efficiency at 2.2 W into 4 Ω from a 5.0 V supply and has an SNR of
>98 dB. Spread-spectrum pulse density modulation is used to
provide lower EMI-radiated emissions compared with other
Class-D architectures.
The SSM2305 has a micropower shutdown mode with a maximum
shutdown current of 30 nA. Shutdown is enabled by applying
a Logic 0 to the
suppression circuitry. This minimizes voltage glitches at the
output during turn-on and turn-off, thus reducing audible noise
on activation and deactivation.
The fully differential input of the SSM2305 provides excellent
rejection of common-mode noise on the input. Input coupling
capacitors can be omitted if the dc input common-mode voltage
is approximately V
The SSM2305 has excellent rejection of power supply noise,
including noise caused by GSM transmission bursts and RF
rectification. PSRR is typically 60 dB at 217 Hz.
The default gain of the SSM2305 is 18 dB, but users can reduce the
gain by using a pair of external resistors.
The SSM2305 is specified over the commercial temperature range
(−40°C to +85°C). It is available in both an 8-lead, 3 mm ×
3 mm lead frame chip scale package (LFCSP) and an 8-lead
mini small outline package (MSOP).
SD
pin. The device also includes pop-and-click
/2.
DD
FUNCTIONAL BLOCK DIAGRAM
10µF
SSM2305
AUDIO IN+
AUDIO IN–
SHUTDOWN
INPUT CAPACIT ORS ARE OPTI ONAL IF INPUT DC COMM ON-MODE VOLTAGE IS
APPROXIMATELY
Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
R
R
R
R
R
R
R
Efficiency η PO = 1.3 W, 8 Ω 89 %
Total Harmonic Distortion + Noise THD + N PO = 1 W into 8 Ω, f = 1 kHz 0.02 %
P
Input Common-Mode Voltage Range VCM 1.0 VDD − 1 V
Common-Mode Rejection Ratio CMRR
Average Switching Frequency fSW 280 kHz
Differential Output Offset Voltage V
OOS
POWER SUPPLY
Supply Voltage Range V
DD
Power Supply Rejection Ratio PSRR VDD = 2.5 V to 5.0 V, dc input floating 70 85 dB
PSRR
Supply Current I
SY
V
V
V
V
V
Shutdown Current ISD
GAIN CONTROL
Closed-Loop Gain Av 18 dB
Differential Input Impedance Z
IN
SHUTDOWN CONTROL
Input Voltage High V
Input Voltage Low V
Wake-Up Time t
Shutdown Time t
Output Impedance Z
IH
IL
WU
SD
OUT
NOISE PERFORMANCE
Output Voltage Noise en
Signal-to-Noise Ratio SNR PO = 1.4 W, RL = 8 Ω 98 dB
RL = 8 Ω, THD = 1%, f = 1 kHz, BW = 20 kHz 1.34 W
= 8 Ω, THD = 1%, f = 1 kHz, BW = 20 kHz, VDD = 3.6 V 0.68 W
L
= 8 Ω, THD = 10%, f = 1 kHz, BW = 20 kHz 1.67 W
L
= 8 Ω, THD = 10%, f = 1 kHz, BW = 20 kHz, VDD = 3.6 V 0.85 W
L
= 4 Ω, THD = 1%, f = 1 kHz, BW = 20 kHz 2.22 W
L
= 4 Ω, THD = 1%, f = 1 kHz, BW = 20 kHz, VDD = 3.6 V 1.1 W
L
= 4 Ω, THD = 10%, f = 1 kHz, BW = 20 kHz 2.8 W
L
= 4 Ω, THD = 10%, f = 1 kHz, BW = 20 kHz, VDD = 3.6 V 1.3 W
L
= 0.5 W into 8 Ω, f = 1 kHz, VDD = 3.6 V 0.02 %
O
GSM VCM
= 2.5 V ± 100 mV at 217 Hz, output referred 55 dB
G = 18 dB 2.0 mV
Guaranteed from PSRR test 2.5 5.5 V
GSM VRIPPLE
= 100 mV at 217 Hz, inputs ac GND, CIN = 0.1 μF 60 dB
VIN = 0 V, no load 3.2 mA
= 0 V, 3.3 mA
IN
= 0 V, no load, VDD = 3.6 V 2.8 mA
IN
= 0 V, VDD = 3.6 V 2.9 mA
IN
= 0 V, no load, VDD = 2.5 V 2.4 mA
IN
= 0 V, VDD = 2.5 V 2.4 mA
IN
= GND
SD
SD = VDD
20 30 nA
37 kΩ
ISY ≥ 1 mA 1.2 V
ISY ≤ 300 nA 0.5 V
SD rising edge from GND to VDD
SD falling edge from VDD to GND
= GND
SD
= 3.6 V, f = 20 Hz to 20 kHz, inputs are ac grounded,
V
DD
= 18 dB, A-weighted
A
V
30 ms
5 μs
>100 kΩ
40 μV
Rev. A | Page 3 of 16
Page 4
SSM2305
ABSOLUTE MAXIMUM RATINGS
Absolute maximum ratings apply at TA = 25°C, unless otherwise noted.
Table 2.
Parameter Rating
Supply Voltage 6 V
Input Voltage V
Common-Mode Input Voltage V
Storage Temperature Range −65°C to +150°C
Operating Temperature Range −40°C to +85°C
Junction Temperature Range −65°C to +165°C
Lead Temperature (Soldering, 60 sec) 300°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
DD
DD
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
Table 3.
Package Type θJA θJC Unit
8-Lead, 3 mm × 3 mm LFCSP 62 20.8 °C/W
8-Lead MSOP 210 45 °C/W
ESD CAUTION
Rev. A | Page 4 of 16
Page 5
SSM2305
PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS
2NC
3IN+
(Not to Scale)
4IN–
PIN 1
INDICAT OR
SSM2305
TOP VIEW
8OUT–
7GND
6VDD
5OUT+
SD
1
2
NC
3
IN+
(Not to S cale)
IN–
4
07243-002
NC = NO CONNECT
Figure 3. MSOP Pin Configuration
SD 1
NOTES:
1. NC = NO CONNECT .
2. EXPOSED P AD IS NOT CO NNECTED INTERNALLY.
FOR INCREASED REL IABILI TY OF T HE SOLDER
JOINTS AND MAXIMUM THERMAL CAPABILIT Y IT
IS RECOMMENDED THAT THE PAD BE SOLDERED
TO THE GRO UND PLANE.
Figure 2. LFSCP Pin Configuration
Table 4. Pin Function Descriptions
Pin No. Mnemonic Description
1
SD
Shutdown Input. Active low digital input.
2 NC No Connect. This pin has no function; tie it to GND.
3 IN+
4 IN−
5 OUT+
6 VDD
7 GND
Noninverting Input.
Inverting Input.
Noninverting Output.
Power Supply.
Ground.
8 OUT− Inverting Output.
SSM2305
TOP VIEW
OUT–
8
7
GND
6
VDD
OUT+
5
07243-103
Rev. A | Page 5 of 16
Page 6
SSM2305
TYPICAL PERFORMANCE CHARACTERISTICS
100
10
RL = 4Ω + 33µH
GAIN = 18dB
VDD = 2.5V
100
10
RL = 8Ω + 33µH
GAIN = 6dB
VDD = 2.5V
VDD = 3.6V
0.010.1
VDD = 5V
1
THD + N (%)
0.01
1
0.1
0.0001
OUTPUT PO WER (W)
Figure 4. THD + N vs. Output Power into 4 Ω + 33 μH, AV = 18 dB
100
RL = 4Ω + 33µH
GAIN = 6dB
10
1
0.1
THD + N (%)
0.01
0.001
0.0001
OUTPUT PO WER (W)
Figure 5. THD + N vs. Output Power into 4 Ω + 33 μH, A
VDD = 2.5V
VDD = 3.6V
0.010.1
VDD = 5V
1
= 6 dB
V
1
0.1
THD + N (%)
0.01
100.001
07243-004
0.001
0.0001
OUTPUT PO WER (W)
VDD = 3.6V
0.010.1
VDD = 5V
1
100.001
07243-007
Figure 7. THD + N vs. Output Power into 8 Ω + 33 μH, AV = 6 dB
100
VDD = 5V
GAIN = 18dB
R
= 4Ω + 33µH
L
10
1
0.1
THD + N (%)
0.01
100.001
07243-005
0.001
10
100
2W
1W
0.5W
100010000010000
FREQUENCY (Hz)
07243-008
Figure 8. THD + N vs. Frequency, VDD = 5 V, RL = 4 Ω + 33 μH, AV = 18 dB
100
RL = 8Ω + 33µH
0.1
THD + N (%)
0.01
0.001
10
1
0.0001
GAIN = 18dB
OUTPUT PO WER (W)
VDD = 2.5V
VDD = 3.6V
0.010.1
1
Figure 6. THD + N vs. Output Power into 8 Ω + 33 μH, A
VDD = 5V
= 18 dB
V
100.001
07243-006
Rev. A | Page 6 of 16
100
100
VDD= 5V
GAIN = 18dB
R
= 8Ω + 33µH
L
10
10
1
1
0.1
0.1
THD + N (%)
0.01
0.01
0.001
0.001
10
0.5W
0.25W
100
1W
100010000010000
FREQUENCY (Hz)
Figure 9. THD + N vs. Frequency, VDD = 5 V, RL = 8 Ω + 33 μH, AV = 18 dB
07243-009
Page 7
SSM2305
100
VDD = 3.6V
GAIN = 18dB
R
= 4Ω + 33µH
L
10
THD + N (%)
0.01
0.001
1
0.1
10
1W
100
0.5W
0.25W
100010000010000
FREQUENCY (Hz)
Figure 10. THD + N vs. Frequency, VDD = 3.6 V, RL = 4 Ω + 33 μH, AV = 18 dB
100
VDD = 3.6V
GAIN = 18dB
R
= 8Ω + 33µH
L
10
1
0.1
THD + N (%)
0.01
0.001
0.5W
10
100
0.25W
0.25W
100010000010000
FREQUENCY (Hz)
Figure 11. THD + N vs. Frequency, VDD = 3.6 V, RL = 8 Ω + 33 μH, AV = 18 dB
100
VDD = 2.5V
GAIN = 18dB
R
= 8Ω + 33µH
L
10
1
0.1
THD + N (%)
0.01
0.075W
0.001
10
07243-010
Figure 13. THD + N vs. Frequency, V
3.8
3.6
3.4
3.2
3.0
2.8
2.6
SUPPLY CURRENT (mA)
2.4
2.2
2.0
2.53.03.54.04.55.05.56.
07243-011
0.25W
0.125W
100
FREQUENCY (Hz)
RL = 8Ω + 33µH
SUPPLY VOLTAGE (V)
100010000010000
= 2.5 V, RL = 8 Ω + 33 μH, AV = 18 dB
DD
RL = 4Ω + 33µH
NO LOA D
07243-013
07243-014
0
Figure 14. Supply Current vs. Supply Voltage
100
VDD = 2.5V
GAIN = 18dB
R
= 4Ω + 33µH
L
10
0.5W
1
0.1
THD + N (%)
0.01
0.001
10
100
0.25W
0.125W
100010000010000
FREQUENCY (Hz)
07243-012
Figure 12. THD + N vs. Frequency, VDD = 2.5 V, RL = 4 Ω + 33 μH, AV = 18 dB
Rev. A | Page 7 of 16
12
10
8
VDD = 5V
6
4
SHUTDOWN CURRENT (µ A)
2
0
00.10.20.30.40.50.60.70.8
SHUTDOWN VOLTAGE (V )
VDD = 3.6V
VDD = 2.5V
Figure 15. Shutdown Current vs. Shutdown Voltage
07243-015
Page 8
SSM2305
3.0
f = 1kHz
GAIN = 18dB
2.5
R
= 4Ω + 33µH
L
2.0
1.5
1.0
OUTPUT POWER (W)
0.5
0
2.53.0
10%
1%
3.54.04.55
SUPPLY VOLTAGE (V)
Figure 16. Maximum Output Power vs. Supply Voltage,
= 4 Ω + 33 μH, AV = 18 dB
R
L
07243-016
.0
1.8
f = 1kHz
1.6
GAIN = 6dB
R
= 8Ω + 33µH
1.4
1.2
1.0
0.8
0.6
OUTPUT POWER (W)
0.4
0.2
L
0
2.53.03. 5
SUPPLY VOLTAGE (V)
10%
1%
4.04.55.0
Figure 19. Maximum Output Power vs. Supply Voltage,
= 8 Ω + 33 μH, AV = 6 dB
R
L
07243-019
3.0
f = 1kHz
GAIN = 6dB
2.5
R
= 4Ω + 33µH
L
2.0
1.5
1.0
OUTPUT POWER (W)
0.5
0
2.53.03. 5
10%
1%
4.04.55.0
SUPPLY VOLTAGE (V)
Figure 17. Maximum Output Power vs. Supply Voltage,
= 4 Ω + 33 μH, AV = 6 dB
R
L
1.8
f = 1kHz
1.6
GAIN = 18dB
R
= 8Ω + 33µH
1.4
1.2
1.0
0.8
0.6
OUTPUT POWER (W)
0.4
0.2
L
0
2.53.03. 5
SUPPLY VOLTAGE (V)
10%
1%
4.04.55.0
Figure 18. Maximum Output Power vs. Supply Voltage,
= 8 Ω + 33 μH, AV = 18 dB
R
L
100
RL = 4Ω + 33µH
90
GAIN = 18dB
80
70
60
50
40
EFFICIE NCY (%)
30
20
10
07243-017
0
0 0.20.40.60.81.01.21.41.61.82.0
VDD = 2.5V
VDD = 5V
VDD = 3.6V
07243-020
OUTPUT PO WER (W)
Figure 20. Efficiency vs. Output Power into 4 Ω + 33 μH
100
RL = 8Ω + 33µH
90
GAIN = 18dB
80
VDD = 2.5V
70
60
50
40
EFFICIE NCY (%)
30
20
10
07243-018
0
00.20.40.60.81.01.21.4
VDD = 3.6V
OUTPUT PO WER (W)
VDD = 5V
07243-021
Figure 21. Efficiency vs. Output Power into 8 Ω + 33 μH
Rev. A | Page 8 of 16
Page 9
SSM2305
0.6
VDD = 5.0V
0.5
R
= 4Ω + 33µH
L
0.4
0.3
0.2
POWER DISSIPATIO N (W)
0.1
0.14
VDD = 3.6V
R
= 8Ω + 33µH
0.12
0.10
0.08
0.06
0.04
POWER DISSIPATION (W)
0.02
L
0
00.51.01.52.02.53.0
OUTPUT PO WER (W)
Figure 22. Power Dissipation vs. Output Power into 4 Ω + 33 μH
= 5.0 V
at V
DD
0.20
0.18
VDD = 5.0V
R
= 8Ω + 33µH
0.16
0.14
0.12
0.10
0.08
0.06
POWER DISSIPATIO N (W)
0.04
0.02
L
0
00.20.40.60.81.01.21.41.61.8
OUTPUT PO WER (W)
Figure 23. Power Dissipation vs. Output Power into 8 Ω + 33 μH
= 5.0 V
at V
DD
07243-022
0
00.20.10.40.30. 50.6 0.7 0.80.9 1.0
OUTPUT POWER (W)
07243-025
Figure 25. Power Dissipation vs. Output Power into 8 Ω + 33 μH
Figure 26. Supply Current vs. Output Power into 4 Ω + 33 μH
0.40
VDD = 3.6V
R
0.35
0.30
0.25
0.20
0.15
POWER DISSIPATIO N (W)
0.10
0.05
= 4Ω + 33µH
L
0
00.20.40.60.81.01.21.41.6
OUTPUT PO WER (W)
Figure 24. Power Dissipation vs. Output Power into 4 Ω + 33 μH
= 3.6 V
at V
DD
07243-024
Rev. A | Page 9 of 16
450
RL = 8Ω + 33µH
400
SUPPLY CURRENT (mA)
350
300
250
200
150
100
50
0
00.2
VDD = 2.5V
0.4
VDD = 3.6V
0.60.81. 01.21.41.61.8
OUTPUT PO WER (W)
Figure 27. Supply Current vs. Output Power into 8 Ω + 33 μH
VDD = 5V
07243-027
Page 10
SSM2305
0
–10
–20
–30
–40
–50
PSSR (dB)
–60
–70
–80
–90
–100
10
100
100010000010000
FREQUENCY (Hz)
Figure 28. Power Supply Rejection Ratio vs. Frequency
07243-028
8
7
6
5
4
3
2
VOLTAGE (V)
1
0
–1
–2
–1001020
SD INPUT
30405060708090
TIME (ms)
Figure 30. Turn-On Response
OUTPUT
07243-030
0
–10
–20
–30
–40
–50
CMRR (dB)
–60
–70
–80
–90
–100
10
100
100010000010000
FREQUENCY (Hz)
Figure 29. Common-Mode Rejection Ratio vs. Frequency
07243-029
8
7
6
5
4
3
2
VOLTAGE (V)
1
0
–1
–2
–500 –400 –300 –200 –100 0100 200 300 400 500
OUTPUT
SD INPUT
TIME (µs)
Figure 31. Turn-Off Response
07243-031
Rev. A | Page 10 of 16
Page 11
SSM2305
APPLICATIONS INFORMATION
OVERVIEW
The SSM2305 mono Class-D audio amplifier features a filterless
modulation scheme that greatly reduces the external components
count that, in turn, conserves board space, thereby reducing
systems cost. The SSM2305 does not require an output filter,
relying instead on the inherent inductance of the speaker coil
and the natural filtering of the speaker and human ear to fully
recover the audio component of the square wave output. Most
Class-D amplifiers use some variation of pulse-width modulation
(PWM), but the SSM2305 uses Σ-Δ modulation to determine the
switching pattern of the output devices, resulting in a number of
EXTERNAL GAIN SETT INGS = 296kΩ/(37kΩ + R
important benefits. Σ-Δ modulators do not produce a sharp peak
with many harmonics in the AM frequency band, as pulse-width
modulators often do. Σ-Δ modulation provides the benefits of
reducing the amplitude of spectral components at high frequencies,
that is, reducing EMI emission that might otherwise be radiated
by speakers and long cable traces. Due to the inherent spreadspectrum nature of Σ-Δ modulation, the need for oscillator
synchronization is eliminated for designs incorporating multiple
SSM2305 amplifiers.
The SSM2305 also offers protection circuits for overcurrent and
temperature protection.
)
EXT
10µF
0.1µF
VBATT
2.5V TO 5.5V
FET
DRIVER
GND
VDD
POP/CLICK
SUPPRESSION
OUT+
OUT–
07243-032
SSM2305
47nF*
R
47nF*
EXT
R
EXT
AUDIO IN+
AUDIO IN–
SHUTDOWN
*INPUT CAPACIT ORS ARE OPT IONAL IF INPUT DC COMM ON-MODE
VOLTAGE IS APPROXIMATELY V
IN+
IN–
SD
37kΩ
37kΩ
DD
MODULATOR
BIAS
/2.
296kΩ
(Σ-Δ)
296kΩ
INTERNAL
OSCILLATOR
Figure 32. Differential Input Configuration, User-Adjustable Gain
EXTERNAL GAIN SETT INGS = 296kΩ/(37kΩ + R
SSM2305
47nF
AUDIO IN+
47nF
R
EXT
R
EXT
IN+
IN–
37kΩ
37kΩ
)
EXT
10µF
296kΩ
MODULATOR
(Σ-Δ)
296kΩ
0.1µF
DRIVER
FET
VDD
VBAT
T
2.5V TO 5. 5V
OUT+
OUT–
SHUTDOWN
SD
BIAS
INTERNAL
OSCILLATOR
GND
Figure 33. Single-Ended Input Configuration, User-Adjustable Gain
Rev. A | Page 11 of 16
POP/CLICK
SUPPRESSION
07243-033
Page 12
SSM2305
GAIN
The SSM2305 has a default gain of 18 dB that can be reduced by
using a pair of external resistors with a value calculated as follows:
External Gain Settings = 296 kΩ/(37 kΩ + R
EXT
)
POP-AND-CLICK SUPPRESSION
Voltage transients at the output of audio amplifiers can occur when
shutdown activates or deactivates. Voltage transients as low as
10 mV can be heard as audio pops in the speaker. Clicks and
pops can also be classified as undesirable audible transients generated by the amplifier system and, therefore, as not coming from
the system input signal. Such transients can be generated when
the amplifier system changes its operating mode. For example, the
following can be sources of audible transients: system power-up/
power-down, mute/unmute, input source change, and sample rate
change. The SSM2305 has a pop-and-click suppression architecture
that reduces these output transients, resulting in noiseless activation
and deactivation.
OUTPUT MODULATION DESCRIPTION
The SSM2305 uses three-level, Σ-Δ output modulation. Each
output is able to swing from GND to VDD, and vice versa. Ideally,
when no input signal is present, the output differential voltage is
0 V because there is no need to generate a pulse. In a real-world
situation, there are always noise sources present. Due to this
constant presence of noise, a differential pulse generates when it
is required in response to this stimulus. A small amount of current
flows into the inductive load when the differential pulse is
generated. However, most of the time output differential voltage is
0 V due to the Analog Devices patented three-level, Σ-Δ output
modulation. This feature ensures that the current flowing through
the inductive load is small.
When the user wants to send an input signal, an output pulse is
generated to follow the input voltage. The differential pulse density
is increased by raising the input signal level. Figure 34 depicts
three-level, Σ-Δ output modulation with and without input stimuli.
OUTPUT = 0V
OUT+
OUT–
VOUT
OUTPUT > 0V
OUT+
OUT–
VOUT
OUTPUT < 0V
OUT+
OUT–
VOUT
Figure 34. 3-Level, Σ-Δ Output Modulation with and Without Input Stimuli
+5V
0V
+5V
0V
+5V
0V
–5V
+5V
0V
+5V
0V
+5V
0V
+5V
0V
+5V
0V
0V
–5V
07243-003
Rev. A | Page 12 of 16
LAYOUT
As output power continues to increase, care needs to be taken
to lay out PCB traces and wires properly between the amplifier,
load, and power supply. A good practice is to use short, wide
PCB tracks to decrease voltage drops and minimize inductance.
Ensure that track widths are at least 200 mil for every inch of
track length for lowest dc resistance (DCR), and use 1 oz or 2 oz
of copper PCB traces to further reduce IR drops and inductance.
A poor layout increases voltage drops, consequently affecting
efficiency. Use large traces for the power supply inputs and
amplifier outputs to minimize losses due to parasitic trace
resistance.
Proper grounding guidelines help improve audio performance,
minimize crosstalk between channels, and prevent switching noise
from coupling into the audio signal. To maintain high output swing
and high peak output power, the PCB traces that connect the
output pins to the load and supply pins should be as wide as
possible to maintain the minimum trace resistances. It is also
recommended that a large ground plane be used for minimum
impedances.
In addition, good PCB layouts isolate critical analog paths from
sources of high interference. Separate high frequency circuits
(analog and digital) from low frequency circuits.
Properly designed multilayer PCBs can reduce EMI emission
and increase immunity to the RF field by a factor of 10 or more
compared with double-sided boards. A multilayer board allows
a complete layer to be used for the ground plane, whereas the
ground plane side of a double-sided board is often disrupted with
signal crossover.
If the system has separate analog and digital ground and power
planes, place the analog ground plane underneath the analog
power plane, and, similarly, place the digital ground plane
underneath the digital power plane. There should be no overlap
between analog and digital ground planes or analog and digital
power planes.
INPUT CAPACITOR SELECTION
The SSM2305 does not require input coupling capacitors if the
input signal is biased from 1.0 V to V
are required if the input signal is not biased within this recommended input dc common-mode voltage range, if high-pass
filtering is needed, or if using a single-ended source. If high-pass
filtering is needed at the input, the input capacitor, together with
the input resistor of the SSM2305, forms a high-pass filter
whose corner frequency is determined by the following
equation:
f
= 1/(2π × RIN × CIN)
C
The input capacitor can significantly affect the performance of
the circuit. Not using input capacitors degrades both the output
offset of the amplifier and the dc PSRR performance.
− 1.0 V. Input capacitors
DD
Page 13
SSM2305
PROPER POWER SUPPLY DECOUPLING
To ensure high efficiency, low total harmonic distortion (THD),
and high PSRR, proper power supply decoupling is necessary.
Noise transients on the power supply lines are short duration
voltage spikes. Although the actual switching frequency can range
from 10 kHz to 100 kHz, these spikes can contain frequency
components that extend into the hundreds of megahertz. The
power supply input needs to be decoupled with a good quality
low ESL, low ESR capacitor, usually of around 4.7 μF. This
capacitor bypasses low frequency noises to the ground plane.
For high frequency transient noise, use a 0.1 μF capacitor as
close as possible to the VDD pin of the device. Placing the
decoupling capacitor as close as possible to the SSM2305 helps
maintain efficient performance.
Rev. A | Page 13 of 16
Page 14
SSM2305
OUTLINE DIMENSIONS
3.25
3.00 SQ
2.75
2.95
INDICATOR
0.90 MAX
0.85 NOM
SEATING
PLANE
PIN 1
12° MAX
TOP
VIEW
0.70 MAX
0.65 TYP
0.30
0.23
0.18
2.75 SQ
2.55
0.05 MAX
0.01 NOM
0.20 REF
Figure 35. 8-Lead Lead Frame Chip Scale Package [LFCSP_VD]
3 mm × 3 mm Body, Very Thin, Dual Lead
Dimensions shown in millimeters
3.20
3.00
2.80
0.60 MAX
0.50
0.40
0.30
(CP-8-2)
0.60 MAX
5
EXPOSED
(BOTTOM VIEW)
4
EXPOSED PAD IS NOT CONNECTED I NTERNAL LY.
FOR INCREASED RELIABILIT Y OF THE SOLDER
JOINTSAND MAXIMUM THERMA L CAPABILITY IT
IS RECOM MENDED THAT THE PAD BE SOLDERED
TO THE G ROUND PLANE.
PA D
0.50
BSC
8
1
1.89
1.74
1.59
PIN 1
INDICATOR
1.60
1.45
1.30
061507-B
8
5
4
SEATING
PLANE
5.15
4.90
4.65
1.10 MAX
0.23
0.08
8°
0°
0.80
0.60
0.40
3.20
3.00
1
2.80
PIN 1
0.65 BSC
0.95
0.85
0.75
0.15
0.38
0.00
0.22
COPLANARITY
0.10
COMPLIANT TO JEDEC STANDARDS MO-187-AA
Figure 36. 8-Lead Mini Small Outline Package [MSOP]
(RM-8)
Dimensions shown in millimeters
ORDERING GUIDE
Model Temperature Range Package Description Package Option Branding