Datasheet SSM2211 Datasheet (Analog Devices)

Low Distortion 1.5 Watt

FEATURES

1.5 W output
Differential (BTL2) output
Single-supply operation: 2.7 V to 5.5 V
Functions down to 1.75 V
Wide bandwidth: 4 MHz
Highly stable, phase margin: >80 degrees
Low distortion: 0.2% THD @ 1 W output
Excellent power-supply rejection

APPLICATIONS

Portable computers
Personal wireless communicators
Hands-free telephones
Speaker phones
Intercoms
Musical toys and talking games

GENERAL DESCRIPTION

The SSM22113 is a high performance audio amplifier that
delivers 1 W rms of low distortion audio power into a bridge­connected 8 Ω speaker load (or 1.5 W rms into 4 Ω load). It
operates over a wide temperature range and is specified for
single-supply voltages between 2.7 V and 5.5 V. When oper­ating from batteries, it continues to operate down to 1.75 V.
This makes the SSM2211 the best choice for unregulated
applications, such as toys and games. Featuring a 4 MHz
bandwidth and distortion below 0.2% THD @ 1 W, superior
performance is delivered at higher power or lower speaker
load impedance than competitive units.

The low differential dc output voltage results in negligible
losses in the speaker winding, and makes high value dc
blocking capacitors unnecessary. Battery life is extended by
using shutdown mode, which typically reduces quiescent
current drain to 100 nA.

1

Audio Power Amplifier

SSM2211

FUNCTIONAL BLOCK DIAGRAM

IN–

IN+

BYPASS

SHUTDOWN

BIAS

SSM2211

V– (GND)

Figure 1.

The SSM2211 is designed to operate over the −20°C to +85°C
temperature range. The SSM2211 is available in SOIC-8 and
LFCSP (lead frame chip scale) surface mount packages. The
advanced mechanical packaging of the SSM2211CP ensures
lower chip temperature and enhanced performance relative to
standard packaging options.

Applications include personal portable computers, hands-free
telephones and transceivers, talking toys, intercom systems, and
other low voltage audio systems requiring 1 W output power.

1

1.5 W @ 4 Ω 25°C ambient, < 1% THD, 5 V supply, 4-layer PCB.

2

Bridge-tied load.

3

Protected by U.S. Patent No. 5,519,576.

V

A

OUT

V

B

OUT

00358-001

Rev. C

Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone]
Fax: [phone] © 2004 Analog Devices, Inc. All rights reserved.

www.analog.com

SSM2211

TABLE OF CONTENTS

Electrical Characteristics................................................................. 3

Absolute Maximum Ratings............................................................ 4

Pin Configurations ...........................................................................5

Typical Performance Characteristics............................................. 6

Product Overview........................................................................... 13

Thermal Performance—LFCSP................................................ 13

Typical Application......................................................................... 14

Bridged Output vs. Single-Ended Output Configurations ... 14

Speaker Efficiency and Loudness .............................................14

Power Dissipation....................................................................... 15

Output Voltage Headroom........................................................ 16

REVISION HISTORY

10/04—Data Sheet Changed from Rev. B to Rev. C

Updated Format..................................................................Universal

Changes to General Description .................................................... 1

Changes to Table 5............................................................................ 4

Deleted Thermal Performance—SOIC Section ........................... 8

Changes to Figure 31...................................................................... 10

Changes to Figure 40...................................................................... 12

Changes to Thermal Performance—LFCSP Section .................13

Deleted Figure 52, Renumbered Successive Figures.................. 14

Deleted Printed Circuit Board Layout —SOIC Section............ 14

Changes to Output Voltage Headroom Section .........................16

Changes to Start-Up Popping Noise Section .............................. 17

Changes to Ordering Guide.......................................................... 20

Automatic Shutdown-Sensing Circuit..................................... 16

Shutdown-Circuit Design Example......................................... 17

Start-Up Popping Noise............................................................. 17

SSM2211 Amplifier Design Example.................................. 17

Single-Ended Applications........................................................ 18

Driving Two Speakers Single Endedly..................................... 18

Evaluation Board ........................................................................ 19

LFCSP Printed Circuit Board Layout Considerations .......... 19

Outline Dimensions .......................................................................20

Ordering Guide .......................................................................... 20

10/02–Data Sheet Changed from Rev. A to Rev. B

Deleted 8-Lead PDIP .........................................................Universal

Updated OUTLINE DIMENSIONS ............................................ 15

5/02–Data Sheet Changed from Rev. 0 to Rev. A

Edits to GENERAL DESCRIPTION...............................................1

Edits to PACKAGE TYPE ................................................................3

Edits to ORDERING GUIDE ..........................................................3

Edits to PRODUCT OVERVIEW ...................................................8

Edits to PRINTED CIRCUIT BOARD LAYOUT

CONSIDERATION........................................................................ 13

Added section PRINTED CIRCUIT BOARD LAYOUT

CONSIDERATION—LFCSP........................................................ 14

Rev. C | Page 2 of 20

SSM2211

ELECTRICAL CHARACTERISTICS

Table 1. V

Parameter Symbol Conditions Min Typ Max Unit

GENERAL CHARACTERISTICS

Differential Output Offset Voltage V
Output Impedance Z

SHUTDOWN CONTROL

Input Voltage High VIH ISY = < 100 mA 3.0 V
Input Voltage Low VIL ISY = normal 1.3 V

POWER SUPPLY

Power-Supply Rejection Ratio PSRR VS = 4.75 V to 5.25 V 66 dB
Supply Current ISY VO1 = VO2 = 2.5 V 9.5 mA
Supply Current, Shutdown Mode ISD Pin 1 = VDD; see Figure 32 100 nA

DYNAMIC PERFORMANCE

Gain Bandwidth GBP 4 MHz
Phase Margin Ø0 86 Degrees

AUDIO PERFORMANCE

Total Harmonic Distortion THD + N
Total Harmonic Distortion THD + N

Voltage Noise Density en f = 1 kHz 85

= 5.0 V, TA = 25°C, RL = 8 Ω, CB = 0.1 µF, VCM = VD/2, unless otherwise noted.

S

AVD = 2 4 50 mV

OOS

0.1

OUT

P = 0.5 W into 8 Ω, f = 1 kHz
P = 1.0 W into 8 Ω, f = 1 kHz

Ω

0.15 %

0.2 %

nV√Hz

Table 2. V

= 3.3 V, TA = 25°C, RL = 8 Ω, CB = 0.1 µF, VCM = VD/2, unless otherwise noted.

S

Parameter Symbol Conditions Min Typ Max Unit

GENERAL CHARACTERISTICS
Differential Output Offset Voltage V
Output Impedance Z

AVD = 2 5 50 mV

OOS

0.1

OUT

Ω

SHUTDOWN INPUT
Input Voltage High VIH ISY = < 100 µA 1.7 V
Input Voltage Low VIL 1 V
POWER SUPPLY
Supply Current ISY VO1 = VO2 = 1.65 V 5.2 mA
Supply Current, Shutdown Mode ISD Pin 1 = VDD; see Figure 32 100 nA
AUDIO PERFORMANCE
Total Harmonic Distortion THD + N

P = 0.35 W into 8 Ω, f = 1 kHz

0.1 %

Table 3. V

= 2.7 V, TA = 25°C, RL = 8 Ω, CB = 0.1 µF, VCM = VS/2, unless otherwise noted.

S

Parameter Symbol Conditions Min Typ Max Unit

GENERAL CHARACTERISTICS

Differential Output Offset Voltage V
Output Impedance Z

AVD = 2 5 50 mV

OOS

0.1

OUT

Ω

SHUTDOWN CONTROL

Input Voltage High VIH ISY = < 100 mA 1.5 V
Input Voltage Low VIL ISY = normal 0.8 V

POWER SUPPLY

Supply Current ISY VO1 = VO2 = 1.35 V 4.2 mA
Supply Current, Shutdown Mode ISD Pin 1 = VDD; see Figure 32 100 nA

AUDIO PERFORMANCE

Total Harmonic Distortion THD + N

P = 0.25 W into 8 Ω, f = 1 kHz

0.1 %

Rev. C | Page 3 of 20

SSM2211

ABSOLUTE MAXIMUM RATINGS

Absolute maximum ratings apply at 25°C, unless otherwise
noted.

Table 4.

Parameter Value

Supply Voltage 6 V
Input Voltage V
Common-Mode Input Voltage V

DD

DD

ESD Susceptibility 2000 V
Storage Temperature Range −65°C to +150°C
Operating Temperature Range −20°C to +85°C
Junction Temperature Range −65°C to +165°C
Lead Temperature Range (Soldering, 60 sec) 300°C

Table 5.

Package Type

8-Lead LFCSP (CP)
8-Lead SOIC (S)

2

θ

JA

1

50 °C/W
121 °C/W

Units

1

For the LFCSP, θJA is measured with exposed lead frame soldered to the

printed circuit board.

2

For the SOIC, θJA is measured with the device soldered to a 4-layer printed

circuit board.

Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; the functional operation of the device at these or
any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may
affect device reliability.

ESD CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.

Rev. C | Page 4 of 20

SSM2211

PIN CONFIGURATIONS

SHUTDOWN

BYPASS

IN+
IN–

1
2

TOP VIEW

(Not to Scale)

3
4

Figure 2. 8-Lead SOIC (SO-8)

IN+
IN–

1
2

TOP VIEW

(Not to Scale)

3
4

B

A

00358-002

SHUTDOWN

BYPASS

8

V

OUT

7

V–
V+

6

V

5

OUT

Figure 3. 8-Lead LFCSP (CP-8)

8

V

B

OUT

7

V–

6

V+

5

V

A

OUT

00358-003

Rev. C | Page 5 of 20

SSM2211

TYPICAL PERFORMANCE CHARACTERISTICS

10

TA = 25°C

= 5V

V

DD

A

= 2 (BTL)

VD

= 8Ω

R

L

P

= 500mW

L

1

CB = 0

10

1

TA = 25°C

= 5V

V

DD

A

= 2 (BTL)

VD

R

= 8Ω

L

= 1W

P

L

CB = 0

CB = 0.1µF

THD + N (%)

CB = 1µF

0.1

0.01
20 100 20k

FREQUENCY (Hz)

1k 10k

Figure 4. THD + N vs. Fre quency

10

CB = 0

1

CB = 1µF

THD + N (%)

0.1
TA = 25°C

V

= 5V

DD

= 10 (BTL)

A

VD

R

= 8Ω

L

P

= 500mW

L

0.01
20 100 20k

CB = 0.1µF

1k 10k

FREQUENCY (Hz)

Figure 5. THD + N vs. Fre quency

10

00358-004

00358-005

CB = 0.1µF

THD + N (%)

0.1

CB = 1µF

0.01
20 100 20k

FREQUENCY (Hz)

1k 10k

Figure 7. THD + N vs. Fre quency

10

CB = 0

1

THD + N (%)

CB = 1µF

0.1
TA = 25°C

= 5V

V

DD

AVD = 10 (BTL)
R

= 8Ω

L

= 1W

P

L

0.01
20 100 20k

CB = 0.1µF

1k 10k

FREQUENCY (Hz)

Figure 8. THD + N vs. Fre quency

10

00358-007

00358-008

CB = 0.1µF

1

CB = 1µF

THD + N (%)

0.1
TA = 25°C

V

= 5V

DD

= 20 (BTL)

A

VD

= 8Ω

R

L

P

= 500mW

L

0.01
20 100 20k

FREQUENCY (Hz)

1k 10k

Figure 6. THD + N vs. Fre quency

00358-006

Rev. C | Page 6 of 20

CB = 0.1µF

1

CB = 1µF

THD + N (%)

0.1
TA = 25°C

= 5V

V

DD

= 20 (BTL)

A

VD

R

= 8Ω

L

= 1W

P

L

0.01
20 100 20k

FREQUENCY (Hz)

1k 10k

Figure 9. THD + N vs. Fre quency

00358-009

SSM2211

10

TA = 25°C

= 5V

V

DD

= 2 (BTL)

A

VD

= 8Ω

R

L

FREQUENCY = 20Hz

= 0.1µF

C

B

1

10

1

TA = 25°C

= 3.3V

V

DD

= 2 (BTL)

A

VD

= 8Ω

R

L

P

= 350mW

L

CB = 0

THD + N (%)

0.1

0.01
20n 0.1 2

10

TA = 25°C

= 5V

V

DD

= 2 (BTL)

A

VD

= 8Ω

R

L

FREQUENCY = 1kHz

= 0.1µF

C

B

P

(W)

OUTPUT

Figure 10. THD + N vs. P

OUTPUT

1

THD + N (%)

0.1

0.01
20n 0.1 2

10

TA = 25°C
V

= 5V

DD

= 2 (BTL)

A

VD

R

= 8Ω

L

FREQUENCY = 20kHz

= 0.1µF

C

B

P

(W)

OUTPUT

Figure 11. THD + N vs. P

OUTPUT

1

THD + N (%)

CB = 0.1µF

0.1
CB = 1µF

1

00358-010

0.01
20 100 20k

1k 10k

FREQUENCY (Hz)

00358-013

Figure 13. THD + N vs. Frequency

10

CB = 0

1

THD + N (%)

1

00358-011

CB = 1µF

0.1

0.01
20 100 20k

CB = 0.1µF

TA = 25°C
V

DD

A

VD

= 8Ω

R

L

= 350mW

P

L

1k 10k

FREQUENCY (Hz)

= 3.3V
= 10 (BTL)

00358-014

Figure 14. THD + N vs. Frequency

10

1

CB = 0.1µF

THD + N (%)

0.1

0.01
20n 0.1 2

P

(W)

OUTPUT

Figure 12. THD + N vs. P

OUTPUT

CB = 1µF

THD + N (%)

0.1
TA = 25°C

= 3.3V

V

DD

= 20 (BTL)

A

VD

= 8Ω

R

L

= 350mW

P

L

1

00358-012

0.01
20 100 20k

1k 10k

FREQUENCY (Hz)

00358-015

Figure 15. THD + N vs. Frequency

Rev. C | Page 7 of 20

SSM2211

10

TA = 25°C

= 3.3V

V

DD

= 2 (BTL)

A

VD

R

= 8Ω

L

FREQUENCY = 20Hz

= 0.1µF

C

B

1

THD + N (%)

0.1

10

1

THD + N (%)

0.1

TA = 25°C

= 2.7V

V

DD

A

= 2 (BTL)

VD

= 8Ω

R

L

= 250mW

P

L

CB = 1µF

CB = 0

CB = 0.1µF

0.01
20n 0.1 2

10

TA = 25°C

= 3.3V

V

DD

= 2 (BTL)

A

VD

R

= 8Ω

L

FREQUENCY = 1kHz

= 0.1µF

C

B

P

(W)

OUTPUT

Figure 16. THD + N vs. P

OUTPUT

1

THD + N (%)

0.1

0.01
20n 0.1 2

10

TA = 25°C

= 3.3V

V

DD

= 2 (BTL)

A

VD

R

= 8Ω

L

FREQUENCY = 20kHz

= 0.1µF

C

B

P

(W)

OUTPUT

Figure 17. THD + N vs. P

OUTPUT

1

1

00358-016

0.01
20 100 20k

1k 10k

FREQUENCY (Hz)

00358-019

Figure 19. THD + N vs. Frequency

10

CB = 0

CB = 0.1µF

1

THD + N (%)

0.1

1

00358-017

0.01
20 100 20k

CB = 1µF

FREQUENCY (Hz)

1k 10k

TA = 25°C
V

= 2.7V

DD

= 10 (BTL)

A

VD

= 8Ω

R

L

= 250mW

P

L

00358-020

Figure 20. THD + N vs. Frequency

10

CB = 0.1µF

1

THD + N (%)

0.1

0.01
20n 0.1 2

P

OUTPUT

(W)

Figure 18. THD + N vs. Frequency

THD + N (%)

0.1

1

00358-018

0.01

CB = 1µF

TA = 25°C
V

= 2.7V

DD

= 20 (BTL)

A

VD

= 8Ω

R

L

= 250mW

P

L

20 100 20k

1k 10k

FREQUENCY (Hz)

00358-021

Figure 21. THD + N vs. Frequency

Rev. C | Page 8 of 20

SSM2211

10

TA = 25°C
V

= 2.7V

DD

A

= 2 (BTL)

VD

R

= 8Ω

L

FREQUENCY = 20Hz

1

THD + N (%)

0.1

0.01
20n 0.1 2

10

TA = 25°C
V

= 2.7V

DD

A

= 2 (BTL)

VD

R

= 8Ω

L

FREQUENCY = 1kHz

P

(W)

OUTPUT

Figure 22. THD + N vs. P

OUTPUT

1

1

00358-022

10

TA = 25°C
V

= 5V

DD

A

= 10 SINGLE ENDED

VD

C

= 0.1µF

B

C

= 1000µF

C

1

RL = 8Ω
P

= 250mW

THD + N (%)

O

0.1

RL = 32Ω
P

= 60mW

O

0.01
20 100 20k

1k 10k

FREQUENCY (Hz)

Figure 25. THD + N vs. Frequency

10

TA = 25°C
V

= 3.3V

DD

= 10 SINGLE ENDED

A

VD

C

= 0.1µF

B

C

= 1000µF

C

1

00358-025

THD + N (%)

0.1

0.01
20n 0.1 2

10

TA = 25°C
V

= 2.7V

DD

A

= 2 (BTL)

VD

R

= 8Ω

L

FREQUENCY = 20kHz

P

(W)

OUTPUT

Figure 23. THD + N vs. P

OUTPUT

1

THD + N (%)

0.1

0.01
20n 0.1 2

P

(W)

OUTPUT

Figure 24. THD + N vs. P

OUTPUT

RL = 8Ω

= 85mW

P

THD + N (%)

O

0.1

RL = 32Ω
P

= 20mW

O

1

00358-023

0.01
20 100 20k

1k 10k

FREQUENCY (Hz)

00358-026

Figure 26. THD + N vs. Frequency

10

TA = 25°C
V

= 2.7V

DD

A

= 10 SINGLE ENDED

VD

C

= 0.1µF

B

C

= 1000µF

C

1

RL = 8Ω
P

= 65mW

THD + N (%)

O

0.1

RL = 32Ω
P

= 15mW

O

1

00358-024

0.01
20 100 20k

1k 10k

FREQUENCY (Hz)

00358-027

Figure 27. THD + N vs. Frequency

Rev. C | Page 9 of 20

SSM2211

10

TA = 25°C
A

= 2 (BTL)

VD

R

= 8Ω

L

FREQUENCY = 20Hz
C

= 0.1µF

B

1

VDD = 2.7V

4.0

3.5

3.0

2.5

T

= 150°C

J,MAX

FREE AIR, NO HEAT SINK
SOIC θJA = 121°C/W
LFCSP θ

8-LEAD LFCSP

= 50°C/W

JA

THD + N (%)

0.1

0.01
20n 0.1 2

Figure 28. THD + N vs. P

10

TA = 25°C
A

= 2 (BTL)

VD

R

= 8Ω

L

FREQUENCY = 1kHz
C

= 0.1µF

B

1

THD + N (%)

0.1

0.01
20n 0.1 2

Figure 29. THD + N vs. P

10

TA = 25°C
A

= 2 (BTL)

VD

= 8Ω

R

L

FREQUENCY = 20kHz
C

= 0.1µF

B

1

VDD = 3.3V

P

OUTPUT

VDD = 2.7V

P

OUTPUT

VDD = 2.7V

(W)

OUTPUT

VDD = 3.3V

(W)

OUTPUT

VDD = 3.3V

VDD = 5V

1

VDD = 5V

1

00358-028

00358-029

2.0

1.5

1.0

8-LEAD SOIC

MAXIMUM POWER DISSIPATION (W)

0.5

0

–40 –30 –20 –10 0 10 30 7020 40 50 60 9080 110100 120

AMBIENT TEMPERATURE (°C)

00358-031

Figure 31. Maximum Power Dissipation vs. Ambient Temperature

10k

VDD = 5V

8k

6k

4k

SUPPLY CURRENT (µA)

2k

0

05

1234

SHUTDOWN VOLTAGE AT PIN 1 (V)

00358-032

Figure 32. Supply Current vs. Shutdown Voltage

14

TA = 25°C

12

= OPEN

R

L

10

8

THD + N (%)

0.1

0.01
20n 0.1 2

P

(W)

OUTPUT

Figure 30. THD + N vs. P

OUTPUT

VDD = 5V

1

SUPPLY CURRENT (mA)

00358-030

Rev. C | Page 10 of 20

6

4

2

0

01 6

2345
SUPPLY VOLTAGE (V)

Figure 33. Supply Current vs. Supply Voltage

00358-033

SSM2211

1.6

1.4

1.2

20

16

VDD = 3.3V
SAMPLE SIZE = 300

1.0

0.8

0.6

OUTPUT POWER (W)

0.4

0.2

0

48 4812 16 20 24 28 32 36 40 44

Figure 34. P

80

60

40

20

0

GAIN (dB)

–20

–40

–60

–80

100 1k 100M

2.7V

LOAD RESISTANCE (Ω)

vs. Load Resistance

OUTPUT

10k 100k 1M 10M

FREQUENCY (Hz)

3.3V

Figure 35. Gain, Phase vs. Frequency (Single Amplifier)

25

VDD = 2.7V
SAMPLE SIZE = 300

20

12

8

FREQUENCY

5V

00358-034

4

0

–30 –20 30–10 0 10 20

OUTPUT OFFSET VOLTAGE (mV)

00358-037

Figure 37. Output Offset Voltage Distribution

180

135

90

45

0

–45

–90

–135

–180

PHASE SHIFT (Degrees)

00358-035

20

VDD = 3.3V

VDD = 5V
SAMPLE SIZE = 300

SAMPLE SIZE = 300

16

12

8

FREQUENCY

4

0

–30 –20 30

–10 0 10 20

OUTPUT OFFSET VOLTAGE (mV)

00358-038

Figure 38. Output Offset Voltage Distribution

600

500

VDD = 5V
SAMPLE SIZE = 1,700

15

10

FREQUENCY

5

0

–20 –15 25–10 –5 0 10 15 205

OUTPUT OFFSET VOLTAGE (mV)

Figure 36. Output Offset Voltage Distribution

FREQUENCY

00358-036

Rev. C | Page 11 of 20

400

300

200

100

0

6 7 8 9 10 11 12 13 14 15

SUPPLY CURRENT (mA)

Figure 39. Supply Current Distribution

00358-039

SSM2211

–50

TA = 25°C

= 5V± 100mV

V

DD

C

= 15µF

B

A

= 2

VD

–55

–60

PSRR (dB)

–65

–70

20 100 30k1k 10k

FREQUENCY (Hz)

Figure 40. PSRR v s. Frequency

00358-040

Rev. C | Page 12 of 20

SSM2211

V

PRODUCT OVERVIEW

The SSM2211 is a low distortion speaker amplifier that can run
from a 1.7 V to 5.5 V supply. It consists of a rail-to-rail input
and a differential output that can be driven within 400 mV of
either supply rail while supplying a sustained output current of
350 mA. The SSM2211 is unity-gain stable, requiring no
external compensation capacitors, and can be configured for
gains of up to 40 dB. Figure 41 shows the simplified schematic.

20kΩ

V

DD

6

20kΩ

IN

0.1µF

4

A1

3

50kΩ

2

50kΩ

SSM2211

50kΩ

50kΩ

A2

BIAS

CONTROL

5

8

V

O1

V

O2

Pin 4 and Pin 3 are the inverting and noninverting terminals
to A1. An offset voltage is provided at Pin 2, which should be
connected to Pin 3 for use in single-supply applications. The
output of A1 appears at Pin 5. A second op amp, A2, is config­ured with a fixed gain of A

= −1 and produces an inverted

V

replica of Pin 5 at Pin 8. The SSM2211 outputs at Pins 5 and 8
produce a bridged configuration output to which a speaker can
be connected. This bridge configuration offers the advantage of
a more efficient power transfer from the input to the speaker.
Because both outputs are symmetric, the dc bias at Pins 5 and 8
are exactly equal, resulting in zero dc differential voltage across
the outputs. This eliminates the need for a coupling capacitor at
the output.

THERMAL PERFORMANCE—LFCSP

The addition of the LFCSP to the Analog Devices package
portfolio offers the SSM2211 user even greater choice when
considering thermal performance criteria. For the 8-lead,
3 mm × 3 mm LFCSP, the θ
performance improvement over most other packaging options.

is 50°C/W. This is a significant

JA

7

1

SHUTDOWN

00358-041

Figure 41. Simplified Schematic

Rev. C | Page 13 of 20

SSM2211

A

TYPICAL APPLICATION

R

F

5V

C

S

C

C

R

UDIO

INPUT

I

Figure 42. Typical Configuration

Figure 42 shows how the SSM2211 is connected in a typical
application. The SSM2211 can be configured for gain much like
a standard op amp. The gain from the audio input to the
speaker is

R

F

A ×= 2

V

(1)

R

I

The 2 × factor comes from the fact that Pin 8 has the opposite
polarity from Pin 5, providing twice the voltage swing to the
speaker from the bridged output configuration.

is a supply bypass capacitor to provide power supply

C

S

filtering. Pin 2 is connected to Pin 3 to provide an offset voltage
for single-supply use, with C
ground to help power-supply rejection. Because Pin 4 is a
virtual ac ground, the input impedance is equal to R
input coupling capacitor which also creates a high-pass filter
with a corner frequency of

HP

CRf×

π

2

CI

1

=

Because the SSM2211 has an excellent phase margin, a feedback
capacitor in parallel with R
required, as it is in some competitor’s products.

BRIDGED OUTPUT VS. SINGLE-ENDED OUTPUT CONFIGURATIONS

The power delivered to a load with a sinusoidal signal can be
expressed in terms of the signal’s peak voltage and the resistance
of the load as

2

V

PK

= (3)

P

L

R

2

L

6

4

–

SSM2211

3

+

2

C

B

providing a low ac impedance to

B

5

8

1

7

–

+

SPEAKER

8V

. CC is the

I

00358-042

(2)

to band limit the amplifier is not

F

By driving a load from a bridged output configuration, the
voltage swing across the load doubles. Thus, an advantage in
using a bridged output configuration becomes apparent from
Equation 3, as doubling the peak voltage results in four times
the power delivered to the load. In a typical application
operating from a 5 V supply, the maximum power that can be
delivered by the SSM2211 to an 8 Ω speaker in a single-ended
configuration is 250 mW. By driving this speaker with a bridged
output, 1 W of power can be delivered. This translates to a 12
dB increase in sound-pressure level from the speaker.

Driving a speaker differentially from a bridged output offers
another advantage in that it eliminates the need for an output
coupling capacitor to the load. In a single-supply application,
the quiescent voltage at the output is half of the supply voltage.
If a speaker is connected in a single-ended configuration, a
coupling capacitor is needed to prevent dc current from flowing
through the speaker. This capacitor also needs to be large
enough to prevent low frequency roll-off. The corner frequency
is given by

1

(4)

CRfπ2

CL

where R

dB3=−

is the speaker resistance and CC is the coupling

L

capacitance.

For an 8 Ω speaker and a corner frequency of 20 Hz, a 1000 µF
capacitor would be needed, which is physically large and costly.
By connecting a speaker in a bridged output configuration, the
quiescent differential voltage across the speaker becomes nearly
zero, eliminating the need for the coupling capacitor.

SPEAKER EFFICIENCY AND LOUDNESS

The effective loudness of 1 W of power delivered into an 8 Ω
speaker is a function of the speaker’s efficiency. The efficiency is
typically rated as the sound pressure level (SPL) at 1 meter in
front of the speaker with 1 W of power applied to the speaker.
Most speakers are between 85 dB and 95 dB SPL at 1 meter at
1 W. Table 6 shows a comparison of the relative loudness of
different sounds.

Table 6. Typical Sound Pressure Levels

Source of Sound dB SPL

Threshold of pain 120
Heavy street traffic 95
Cabin of jet aircraft 80
Average conversation 65
Average home at night 50
Quiet recording studio 30
Threshold of hearing 0

It can easily be seen that 1 W of power into a speaker can
produce quite a bit of acoustic energy.

Rev. C | Page 14 of 20

SSM2211

POWER DISSIPATION

Another important advantage in using a bridged output config­uration is the fact that bridged output amplifiers are more
efficient than single-ended amplifiers in delivering power to a
load. Efficiency is defined as the ratio of power from the power
supply to the power delivered to the load:

P

L

η

=

P

SY

An amplifier with a higher efficiency has less internal power
dissipation, which results in a lower die-to-case junction temp­erature, as compared to an amplifier that is less efficient. This is
important when considering the amplifier’s maximum power
dissipation rating vs. ambient temperature. An internal power
dissipation vs. output power equation can be derived to fully
understand this.

The power dissipated by the amplifier internally is simply the
difference between Equation 6 and Equation 3. The equation
for internal power dissipated, P

, expressed in terms of power

DISS

delivered to the load and load resistance is

×=22

VV

PEAKDD

P

DISS

R

π

L

(7)

The graph of this equation is shown in Figure 44.

1.5
VDD = 5V

RL = 4

Ω

1.0

The internal power dissipation of the amplifier is the internal
voltage drop multiplied by the average value of the supply
current. An easier way to find internal power dissipation is to
measure the difference between the power delivered by the
supply voltage source and the power delivered into the load.
The waveform of the supply current for a bridged output
amplifier is shown in Figure 43.

V

OUT

V

PEAK

TIME

T

I

SY

I

DD, PEAK

I

DD, AVG

T

Figure 43. Bridged Amplifier Output Voltage and Supply Current vs. Time

TIME

00358-043

By integrating the supply current over a period T, then dividing
the result by T, I

can be found. Expressed in terms of peak

DD,AVG

output voltage and load resistance

V

2

PEAK

I

=

,

AVGDD

(5)

R

π

L

Therefore power delivered by the supply, neglecting the bias
current for the device is

2

VV

PEAKDD

=

P

SY

π

(6)

R

L

RL = 8

0.5

POWER DISSIPATION (W)

RL = 16

Ω

0

0 1.5

Figure 44. Power Dissipation vs. Output Power with V

0.5 1.0
OUTPUT POWER (W)

Ω

DD

00358-044

= 5 V

Because the efficiency of a bridged output amplifier (Equation 3
divided by Equation 6) increases with the square root of P

, the

L

power dissipated internally by the device stays relatively flat,
and actually decreases with higher output power. The maxi­mum power dissipation of the device can be found by differ­entiating Equation 7 with respect to load power, and setting the
derivative equal to zero. This yields

2

×

V

−

∂

P

DISS

=

∂

P

L

π

R

L

DD

1

2

P

L

(8)

01

=−

And occurs when

2

V

2

DD

P =

MAXDISS

,

(9)

2

Rπ

L

Using Equation 9 and the power derating curve in Figure 31,
the maximum ambient temperature can be found easily. This
ensures that the SSM2211 does not exceed its maximum
junction temperature of 150°C.

The power dissipation for a single-ended output application
where the load is capacitively coupled is given by

22

V

×

P −

=∂

DISS

DD

R

π

L

PP

(10)

LL

The graph of Equation 10 is shown in Figure 45.

Rev. C | Page 15 of 20

SSM2211

V

0.35

0.30

0.25

0.20

0.15

0.10

POWER DISSIPATION (W)

0.05

0

VDD = 5V

0 0.40.1

RL = 16

Ω

0.2 0.3

OUTPUT POWER (W)

RL = 8

Ω

RL = 4

Ω

00358-045

Figure 45. Power Dissipation vs. Single-Ended Output Power

with V

= 5 V

DD

The maximum power dissipation for a single-ended output is

2

V

P

MAXDISS

,

DD

=

(11)

2

R

π2

L

OUTPUT VOLTAGE HEADROOM

The outputs of both amplifiers in the SSM2211 can come to
within 400 mV of either supply rail while driving an 8 Ω load.
As compared to other competitors’ equivalent products, the
SSM2211 has a higher output voltage headroom. This means
that the SSM2211 can deliver an equivalent maximum output
power while running from a lower supply voltage. By running at
a lower supply voltage, the internal power dissipation of the
device is reduced, as can be seen in Equation 9. This extended
output headroom, along with the LFCSP package, allows the
SSM2211 to operate in higher ambient temperatures than other
competitors’ devices.

The SSM2211 is also capable of providing amplification even at
supply voltages as low as 1.7 V. The maximum power available
at the output is a function of the supply voltage. Therefore, as
the supply voltage decreases, so does the maximum power
output from the device. The maximum output power vs. supply
voltage at various bridged-tied load resistances is shown in
Figure 46 The maximum output power is defined as the point
at which the output has 1% total harmonic distortion (THD).

To find the minimum supply voltage needed to achieve a
specified maximum undistorted output power, use Figure 46.

For example, an application requires only 500 mW to be output
for an 8 Ω speaker. With the speaker connected in a bridged
output configuration, the minimum supply voltage required
is 3.3 V.

1.6

1.4

1.2

1.0

0.8

@ 1% THD (W)

OUT

0.6

MAX P

0.4

0.2

0

1.5 5.02.0

2.5 3.0 3.5 4.0 4.5
SUPPLY VOLTAGE (V)

Figure 46. Maximum Output Power vs. V

RL = 4

Ω

RL = 8

Ω

RL = 16

Ω

00358-046

SY

Shutdown Feature

The SSM2211 can be put into a low power consumption shut­down mode by connecting Pin 1 to 5 V. In shutdown mode,
the SSM2211 has an extremely low supply current of less than
10 nA. This makes the SSM2211 ideal for battery-powered
applications.

Pin 1 should be connected to ground for normal operation.
Connecting Pin 1 to V

mutes the outputs and puts the device

DD

into shutdown mode. A pull-up or pull-down resistor is not
required. Pin 1 should always be connected to a fixed potential,
either V

or ground, and never be left floating. Leaving Pin 1

DD

unconnected could produce unpredictable results.

AUTOMATIC SHUTDOWN-SENSING CIRCUIT

Figure 47 shows a circuit that can be used to take the SSM2211
in and out of shutdown mode automatically. This circuit can
be set to turn the SSM2211 on when an input signal of a certain
amplitude is detected. The circuit also puts the device into low
power shutdown mode if an input signal is not sensed within
a certain amount of time. This can be useful in a variety of
portable radio applications where power conservation is critical.

4

SSM2211

1

R8

5

8

A1

V

DD

R5

C2

IN

R6

V

DD

R1 R3

NOTE
ADDITIONAL PINS OMITTED FOR CLARITY

–

OP181

+

R2

A2

Figure 47. Automatic Shutdown Circuit

R7

V

DD

R4

D1

C1

00358-047

Rev. C | Page 16 of 20

SSM2211

The input signal to the SSM2211 is also connected to the non­inverting terminal of A2. R1, R2, and R3 set the threshold
voltage for when the SSM2211 is to be taken out of shutdown
mode. D1 half-wave rectifies the output of A2, discharging C1
to ground when an input signal greater than the set threshold
voltage is detected. R4 controls the charge time of C1, which
sets the time until the SSM2211 is put back into shutdown
mode after the input signal is no longer detected.

R5 and R6 are used to establish a voltage reference point equal
to half of the supply voltage. R7 and R8 set the gain of the
SSM2211. D1 should be a 1N914 or equivalent diode and A2
should be a rail-to-rail output amplifier, such as an OP181 or
equivalent. This ensures that C1 discharges sufficiently to bring
the SSM2211 out of shutdown mode.

To find the appropriate component values, first the gain of A2
must be determined by

V

SY

A =

MINV,

(12)

V

THS

where:

V

is the single supply voltage.

SY

V

is the threshold voltage.

THS

should be set to a minimum of 2 for the circuit to work

A

V

properly.

Next choose R1 and set R2 to

⎛
⎜

R1R2

⎜
⎝

⎞

2

⎟

1

(13)

−=
⎟

A

V

⎠

Find R3 as:

R3

R2R1

=

+

R2R2

(14)

(

1−

A

)

V

×

C1 can be arbitrarily set but should be small enough to keep A2
from becoming capacitively overloaded. R4 and C1 control the
shutdown rate. To prevent intermittent shutdown with low
frequency input signals, the minimum time constant should be

(15)

f

LOW

where f

C1R410≥×

is the lowest input frequency expected.

LOW

The minimum gain of the shutdown circuit from Equation 12 is

= 100. R1 is set to 100 kΩ. Using Equation 13 and Equation

A

V

14, R2 = 98 kΩ and R3 = 4.9 MΩ. C1 is set to 0.01 µF, and based
on Equation 15, R4 is set to 10 MΩ . To minimize power supply
current, R5 and R6 are set to 10 MΩ. The previous procedure
provides an adequate starting point for the shutdown circuit.
Some component values may need to be adjusted empirically to
optimize performance.

START-UP POPPING NOISE

During power-up or release from shutdown mode, the midrail
bypass capacitor, C
starts up. By adjusting the charging time constant of C
start-up pop noise can be pushed into the subaudible range,
greatly reducing start-up popping noise. On power-up, the
midrail bypass capacitor is charged through an effective
resistance of 25 kΩ. To minimize start-up popping, the charging
time constant for C
constant for the input coupling capacitor, C

× 25 kΩ > CCR1 (16)

C

B

For an application where R1 = 10 kΩ and C
midrail bypass capacitor, C
minimize start-up popping noise.

SSM2211 Amplifier Design Example

Maximum Output Power 1 W
Input Impedance 20 kΩ
Load Impedance 8 Ω
Input Level 1 V rms
Bandwidth 20 Hz − 20 kHz ± 0.25 dB

The configuration shown in Figure 42 is used. The first thing to
determine is the minimum supply rail necessary to obtain the
specified maximum output power. From Figure 46, for 1 W of
output power into an 8 Ω load, the supply voltage must be at
least 4.6 V. A supply rail of 5 V can be easily obtained from a
voltage reference. The extra supply voltage also allows the
SSM2211 to reproduce peaks in excess of 1 W without clipping
the signal. With V
the maximum power dissipation for the SSM2211 is 633 mW.
From the power derating curve in Figure 31, the ambient
temperature must be less than 73°C for the SOIC and 118°C for
the LFCSP.

, determines the rate at which the SSM2211

B

, the

B

should be greater than the charging time

B

.

C

= 0.22 µF, the

C

, should be at least 0.1 µF to

B

= 5 V and RL = 8 Ω, Equation 9 shows that

DD

SHUTDOWN-CIRCUIT DESIGN EXAMPLE

In this example, a portable radio application requires the
SSM2211 to be turned on when an input signal greater than
50 mV is detected. The device should return to shutdown mode
within 500 ms after the input signal is no longer detected. The
lowest frequency of interest is 200 Hz, and a 5 V supply is used.

Rev. C | Page 17 of 20

The required gain of the amplifier can be determined from
Equation 17 as

RP

A

V

LL

8.2==

V

rmsIN,

(17)

SSM2211

()(

)

A

From Equation 1

RI

A

V

F

=

2

R

or R

= 1.4 × RI. Because the desired input impedance is 20 kΩ,

F

RI = 20 kΩ and R2 = 28 kΩ.

The final design step is to select the input capacitor. When
adding an input capacitor, C

, high-pass filter, the corner fre-

C

quency needs to be far enough away for the design to meet the
bandwidth criteria. For a first-order filter to achieve a pass­band response within 0.25 dB, the corner frequency should
be at least 4.14 × away from the pass-band frequency. So,
(4.14 × f

) < 20 Hz. Using Equation 2, the minimum size of

HP

input capacitor can be found:

C

>

C

> 1.65 µF. Using a 2.2 µF is a practical choice for CC.

So C

C

1

()

⎛

Ω

k20π2

⎜
⎝

(18)

Hz20

⎞
⎟

14.4

⎠

The gain bandwidth product for each internal amplifier in the
SSM2211 is 4 MHz. Because 4 MHz is much greater than

4.14 × 20 kHz, the design meets the upper frequency bandwidth
criteria. The SSM2211 could also be configured for higher
differential gains without running into bandwidth limitations.
Equation 16 shows an appropriate value for C

to reduce start-

B

up popping noise:

>BC

Selecting C

Ω

k25

to be 2.2 µF for a practical value of capacitor

B

=

Ω

(19)

µF76.1

k20µF2.2

minimizes start-up popping noise.

To summarize the final design:

5 V

V

DD

R1 20 kΩ
R

28 kΩ

F

2.2 µF

C

C

2.2 µF

C

B

Max. T

85°C

A

SINGLE-ENDED APPLICATIONS

There are applications in which driving a speaker differentially
is not practical. An example would be a pair of stereo speakers
where the minus terminal of both speakers is connected to
ground. Figure 48 shows how this can be accomplished.

10kΩ

10kΩ

5V

5V

6

AUDIO

AUDIO

INPUT

INPUT

0.47µF

0.47µF

10kΩ

10kΩ

0.1µF

0.1µF

4

4

–

–

SSM2211

SSM2211

3

3

+

+

2

2

6

5

5

8

8

1

1

7

7

470µF

470µF

+

+

–

–

250mW

250mW
SPEAKER

SPEAKER
(8Ω)

(8Ω)

00358-048

00358-048

Figure 48. A Single-Ended Output Application

It is not necessary to connect a dummy load to the unused
output to help stabilize the output. The 470 µF coupling
capacitor creates a high-pass frequency cutoff, as given in
Equation 4, of 42 Hz, which is acceptable for most computer
speaker applications. The overall gain for a single-ended output
configuration is A

= RF/R1, which for this example is equal to 1.

V

DRIVING TWO SPEAKERS SINGLE ENDEDLY

It is possible to drive two speakers single endedly with both
outputs of the SSM2211.

20kΩ

5V

UDIO

INPUT

20kΩ

1µF

0.1µF

4

–

SSM2211

3

+

2

6

5

8

1

7

Figure 49. SSM2211 Used as a Dual-Speaker Amplifier

Each speaker is driven by a single ended output. The trade-off is
that only 250 mW of sustained power can be put into each
speaker. Also, a coupling capacitor must be connected in series
with each of the speakers to prevent large dc currents from
flowing through the 8 Ω speakers. These coupling capacitors
produce a high-pass filter with a corner frequency given by
Equation 4. For a speaker load of 8 Ω and a coupling capacitor
of 470 µF, this results in a −3 dB frequency of 42 Hz.

Because the power of a single-ended output is one quarter that
of a bridged output, both speakers together are still half as loud
(−6 dB SPL) as a single speaker driven with a bridged output.

The polarity of the speakers is important, as each output is 180°
out of phase with the other. By connecting the minus terminal
of Speaker 1 to Pin 5, and the plus terminal of Speaker 2 to Pin
8, proper speaker phase can be established.

470µF

470µF

–

+

+

–

LEFT
SPEAKER
(8Ω)

RIGHT
SPEAKER
(8Ω)

00358-049

Rev. C | Page 18 of 20

SSM2211

The maximum power dissipation of the device can be found by
doubling Equation 11, assuming both loads are equal. If the
loads are different, use Equation 11 to find the power dissipa­tion caused by each load, then take the sum to find the total
power dissipated by the SSM2211.

EVALUATION BOARD

An evaluation board for the SSM2211 is available. For more
information, call 1-800-ANALOGD.

R1

51kΩ

SHUTDOWN

ON

AUDIO

INPUT

CW

C

1µF

+

R

IN

IN

20kΩ

VOLUME

20kΩ POT.

Figure 50. Evaluation Board Schematic

The voltage gain of the SSM2211 is given by Equation 20

R

F

A ×= 2

V

(20)

R

IN

If desired, the input signal may be attenuated by turning the
10 kΩ potentiometer in the CW direction. C
common-mode voltage (V

/2) present at Pin 2 and 3. With

D

V+ = 5 V, there is 2.5 V common-mode voltage present at both
output terminals, V

and VO2, as well.

O1

CAUTION: The ground lead of the oscilloscope probe, or any
other instrument used to measure the output signal, must not
be connected to either output, as this would short out one of the
amplifier’s outputs and possibly damage the device.

A safe method of displaying the differential output signal using
a grounded scope is shown in Figure 51. Connect Channel A’s
probe to the V

post, invert Channel B and add the two channels

the V

O1

terminal post, connect Channel B’s probe to

O2

together. Most multichannel oscilloscopes have this feature built
in. If you must connect the ground lead of the test instrument
to either output signal pins, a power-line isolation transformer
must be used to isolate the instrument ground from the power
supply ground.

Recall that V = √P × R , so then for P
V = 2.8 V rms, or 8 V p-p. If the available input signal is 1.4 V
rms or more, use the board as is, with R
gain is needed, increase the value of R

V+

+

C2
10µF

6
1
2

SSM2211

3
4

7

R

F

20kΩ

C1

0.1µF

= 1 W and RL = 8 Ω,

O

.

F

J1

8

5

J2

isolates the input

IN

= RI = 20 kΩ. If more

F

C1

0.1µF

R

L

1W 8Ω

V

O2

V

O1

00358-050

When you have determined the closed-loop gain required by
your source level, and can develop 1 W across the 8 Ω load
resistor with the normal input signal level, replace the resistor
with your speaker. Your speaker may be connected across the

and VO2 posts for bridged mode operation only after the

V

O1

8 Ω load resistor is removed. For no phase inversion, V

should

O2

be connected to the (+) terminal of the speaker.

V

SSM2211

5

2.5V

COMMON

MODE

8

8Ω
1W

GND

V

O2

PROBES

O1

CH A

CH B

CH B

INV. ON

OSCILLOSCOPE

DISPLAY

A+B

Figure 51. Using an Oscilloscope to Display the Bridged Output Voltage

To use the SSM2211 in a single-ended output configuration,
replace J1 and J2 jumpers with electrolytic capacitors of a
suitable value, with the negative terminals to the output
terminals V

and VO2. The single-ended loads may then be

O1

returned to ground. Note that the maximum output power is
reduced to 250 mW, one-quarter of the rated maximum, due to
the maximum swing in the nonbridged mode being one-half,
and power being proportional to the square of the voltage. For
frequency response down 3 dB at 100 Hz, a 200 µF capacitor is
required with 8 Ω speakers.

The SSM2211 evaluation board also comes with a shutdown
switch, which allows the user to switch between on (normal
operation) and the power-conserving shutdown mode.

LFCSP PRINTED CIRCUIT BOARD LAYOUT CONSIDERATIONS

The LFCSP is a plastic encapsulated package with a copper lead
frame substrate. This is a leadless package with solder lands on
the bottom surface of the package instead of conventional
formed perimeter leads. A key feature that allows the user to
reach the quoted θ
paddle (DAP) on the bottom surface of the package. When
soldered to the PCB, the DAP can provide efficient conduction
of heat from the die to the PCB. For the user to achieve
optimum package performance, consideration should be given
to the PCB pad design for both the solder lands and the DAP.
For further information the user is directed to the Amkor
Technology document, “Application Notes for Surface Mount
Assembly of Amkor’s MicroLead Frame (MLF) Packages.” This
can be downloaded from the Amkor Technology website,
www.amkor.com, as a product application note.

performance is the exposed die attach

JA

00358-051

Rev. C | Page 19 of 20

SSM2211

R

OUTLINE DIMENSIONS

5.00 (0.1968)

4.80 (0.1890)

4.00 (0.1574)

3.80 (0.1497)

0.25 (0.0098)

0.10 (0.0040)

COPLANARITY

0.10

CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS
(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN

85

1.27 (0.0500)

SEATING

PLANE

COMPLIANT TO JEDEC STANDARDS MS-012AA

Figure 52. 8-Lead Standard Small Outline Package [SOIC]

Dimensions shown in millimeters and (inches)

3.00

BSC SQ

PIN 1

INDICATO

0.90

0.85

0.80

SEATING

PLANE

12° MAX

TOP

VIEW

0.30

0.23

0.18

0.80 MAX

0.65TYP

Figure 53. 8-Lead Frame Chip Scale Package [LFCSP]

Dimensions shown in millimeters

ORDERING GUIDE

Model Temperature Range Package Description Package Options Brand

SSM2211CP-R2

SSM2211CP-Reel

SSM2211CP-Reel7
SSM2211CPZ-Reel

1

SSM2211CPZ-Reel71

SSM2211S

SSM2211S-Reel

SSM2211S-Reel7

SSM2211SZ1

SSM2211SZ-Reel1

SSM2211SZ-Reel71

−20°C to +85°C

−20°C to +85°C

−20°C to +85°C

−20°C to +85°C

−20°C to +85°C

−20°C to +85°C

−20°C to +85°C

−20°C to +85°C

−20°C to +85°C

−20°C to +85°C

−20°C to +85°C

6.20 (0.2440)

5.80 (0.2284)

41

BSC

1.75 (0.0688)

1.35 (0.0532)

0.51 (0.0201)

0.31 (0.0122)

0.25 (0.0098)

0.17 (0.0067)

0.50 (0.0196)

0.25 (0.0099)

8°

1.27 (0.0500)

0°

0.40 (0.0157)

× 45°

Narrow Body (R-8), S-Suffix

0.50

0.40

2.75

BSC SQ

0.20 REF

0.05 MAX

0.02 NOM

0.45

0.50

BSC

0.60 MAX

0.25
MIN

8

(BOTTOMVIEW)

5

EXPOSED

PAD

0.30

4

1

1.60

1.45

1.30

1.50
REF

PIN 1
INDICATOR

1.90

1.75

1.60

3 mm × 3 mm Body (CP-8-2)

8-Lead LFCSP CP-8-2 B5A

8-Lead LFCSP CP-8-2 B5A

8-Lead LFCSP CP-8-2 B5A
8-Lead LFCSP CP-8-2 B5A

8-Lead LFCSP CP-8-2 B5A

8-Lead SOIC R-8 (S-Suffix)

8-Lead SOIC R-8 (S-Suffix)

8-Lead SOIC R-8 (S-Suffix)

8-Lead SOIC R-8 (S-Suffix)

8-Lead SOIC R-8 (S-Suffix)

8-Lead SOIC R-8 (S-Suffix)

1

Z=Pb-free part.

© 2004 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.

C00358-0-10/04(C)

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