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Elektronische Bauelemente
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A Suffix of “-C” specifies halogen & lead-free
3.5 A, 100V , R
DESCRIPTION
The SSM0410 provide the designer with best combination of fast switching,
ruggedized device design, low on resistance and cost-effectiveness.
The SOT-223 package is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage applications such as DC/DC converters.
FEATURES
Fast Switching
Low On-resistance
Logic Level Compatible
MARKING
Drain
SSM0410
220mΩ
DS(ON)
SOT-223
A
M
Top View
K
E
F G H J
B
C
L
1
D
4
2
3
Gate
Source
Millimeter
REF.
Min. Max. Min. Max.
A 6.20 6.70 G - 0.10
B 6.70 7.30 H - C 3.30 3.70 J 0.25 0.35
D 1.42 1.90 K - E 4.50 4.70 L 2.30 REF.
F 0.60 0.82 M 2.90 3.10
REF.
Millimete
MAXIMUM RATINGS (T
PARAMETER SYMBOL RATING UNIT
Drain – Source Voltage VDS 100 V
Gate – Source Voltage VGS ±20 V
Continuous Drain Current 3, VGS@5V
Pulsed Drain Current
Total Power Dissipation PD 2.7 W
Linear Derating Factor 0.02 W/°C
Operating Junction & Storage Temperature Range TJ, T
Maximum Junction–Ambient 3 R
1,2
= 25°C unless otherwise specified)
A
T
= 25°C
A
TA = 70°C 2.2 A
I
I
D
DM
-65~150 °C
STG
THERMAL DATA
45 °C/W
θJA
3.5 A
14 A
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
11-May-2010 Rev. A Page 1 of 4
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SSM0410
Elektronische Bauelemente
N-Channel Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (T
PARAMETER SYMBOL MIN TYP MAX UNIT TEST CONDITION
Drain-Source Breakdown Voltage BV
Gate Threshold Voltage V
Forward Transconductance gFS - 4.0 - S VDS=10V, ID=2.5A
Gate-Source Leakage Current I
Drain-Source Leakage Current I
Drain-Source On Resistance R
Total Gate Charge 2 Q
Gate-Source Charge Qgs - 4.4 -
Gate-Drain (“Miller”) Charge Qgd - 3.0 -
Turn -on Delay Time 2 T
Rise Time Tr - 9.4 -
Turn-off Delay Time T
Fall Time Tf - 2.6 -
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Forward On Voltage 3 V
Note:
1. Pulse width limited by Maximum junction temperature.
2. Pulse width ≦ 300 μs, Duty cycle ≦ 2%
3. Surface mounted on 1 in
2
copper pad of FR4 board; 120°C/W when mounted on Min. copper pad.
= 25°C unless otherwise specified)
J
100 - - V VGS=0V, ID =1mA
DSS
1.0 - 2.5 V VDS= 10V, ID =1mA
GS(TH)
- - ±100 nA VGS=±20V
GSS
- - 10 μA VDS=100V, VGS=0V
DSS
DS(ON)
- 11.2 -
g
- 9 -
d(ON)
- 26.8 -
d(OFF)
- 975 -
ISS
- 38 -
OSS
- 27 -
RSS
- - 0.22 Ω V
- - 0.28 VGS=5.0V, ID=1.7A
SOURCE-DRAIN DIODE
- - 1.5 V VGS=0V, IS=3.5A
SD
3.5 A, 100V , R
nC
nS
pF
DS(ON)
=10V, ID=2.6A
GS
V
=5V
GS
=80V
V
DS
=3.5A
I
D
=30V
V
DD
=10V
V
GS
=1A
I
D
=6Ω, RL=30Ω
R
G
V
=25V
DS
=0V
V
GS
f=1MHz
220mΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
11-May-2010 Rev. A Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVES
SSM0410
3.5 A, 100V , R
N-Channel Enhancement Mode Power MOSFET
DS(ON)
220mΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
11-May-2010 Rev. A Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVES
SSM0410
3.5 A, 100V , R
N-Channel Enhancement Mode Power MOSFET
DS(ON)
220mΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
11-May-2010 Rev. A Page 4 of 4
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