Page 1
Advanced Power MOSFET
SSH70N10A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Ο
C
175 Operating Temperature
Lower Leakage Current : 10 A (Max.) @ VDS = 100V
Lower R
: 0.018 (Typ.)
DS(ON)
Ω
µ
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
T
, T
J
STG
T
L
Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Continuous Drain Current (T
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Peak Diode Recovery dv/dt
Total Power Dissipation (T
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
Characteristic Value UnitsSymbol
Ο
=25 )
C
C
Ο
=100 )
C
C
Ο
=25 )
C
C
O
O
O
O
BVBV
R
I
= 100 V
DSS
DS(on)
= 70 A
D
= 0.023
Ω
TO-3P
1
2
3
1.Gate 2. Drain 3. Source
100
70
49.2
1
2
1
1
3O3
280
+
_
20
1633
70
30
6.5
300
2.0
- 55 to +175
300
V
A
A
V
mJ
A
mJ
V/ns
W
W/
Ο
C
Ο
C
Thermal Resistance
R
JC
θ
R
CS
θ
R
θ
JA
©1999 Fairchi ld Semiconduc tor Corpor ation
Characteristic Max. UnitsSymbol Typ.
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
--
0.24
--
0.5
--
40
Ο
C
/W
Rev. B
Page 2
SSH70N10A
Electrical Characteristics (T
Ο
=25 unless otherwise specified)
C
C
N-CHANNEL
POWER MOSFET
BV
∆ ∆
BV/ T
V
GS(th)
I
I
R
DS(on)
C
C
C
t
d(on)
t
d(off)
Q
Q
DSS
GSS
DSS
g
iss
oss
rss
t
t
Q
CharacteristicSymbol
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
J
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
fs
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
r
Turn-Off Delay Time
Fall Time
f
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain(“miller”) Charge
gd
100
--
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Max. UnitsTyp.Min. Test Condition
=0V,ID=250 A
V
--
--
4.0
10
--
60
60
--
--
V
GS
Ο
I
V/
nA
µ
A
=250 A See Fig 7
C
D
V
V
Ω
Ω
pF
ns
=5V,ID=250 A
DS
V
=20V
GS
V
=-20V
GS
V
=100V
DS
V
=80V,TC=150
DS
=10V,ID=35A
V
GS
=40V,ID=35A
V
DS
=0V,VDS=25V,f =1MHz
V
GS
See Fig 5
V
=50V,ID=70A,
DD
=5.3
R
G
See Fig 13
V
=80V,VGS=10V,
DS
nC
I
=70A
D
See Fig 6 & Fig 12
µ
--
0.12
--
--
--
--
--
--
53.51
3750
850
375
22
24
112
84
151
31
66
100
-100
100
0.023
4870
980
430
240
180
195
µ
µ
Ο
C
4
O
4
O
Ω
4
5
O
O
4
5
O
O
Source-Drain Diode Ratings and Characteristics
CharacteristicSymbol Max. UnitsTyp.Min. Test Condition
I
I
SM
V
t
Q
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
1
O
2
L=0.5mH, I
O
3
I
O
SD
Pulse Test : Pulse Width = 250 s, Duty Cycle 2%
4
O
Essentially Independent of Operating Temperature
5
O
Continuous Source Current
S
Pulsed-Source Current
Diode Forward Voltage
SD
Reverse Recovery Time
rr
Reverse Recovery Charge
rr
=70A, VDD=25V, RG=27 , Starting TJ =25
AS
_
µ
70A, di/dt 530A/ s, VDD BV
_
<
<
_
<
µ
Ω
, Starting TJ =25
DSS
O
O
_
<
--
--
70
1
--
--
280
4
--
--
1.6
--
143
--
--
0.72
o
C
o
C
--
Integral reverse pn-diode
A
in the MOSFET
V
ns
µ
C
Ο
C
T
=25 ,IS=70A,VGS=0V
J
Ο
C
T
=25 ,IF=70A
J
/dt=100A/ s
di
F
µ
O
4
Page 3
N-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics Fig 2. Transfer Characteristics
V
GS
Top : 1 5 V
1 0 V
2
10
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
SSH70N10A
2
10
o
C
175
1
10
, Drain Current [A]
D
I
0
10
-1
10
@ Notes :
1. 250
s Pulse Test
µ
2. T
= 25 oC
C
0
10
VDS , Drain-Source Voltage [V]
0.03
VGS = 10 V
]
0.02
Ω
, [
DS(on)
R
0.01
VGS = 20 V
Drain-Source On-Resistance
0.00
0 50 100 150 200 250 300
ID , Drain Current [A]
8000
6000
C
iss
C
= Cgs+ Cgd ( Cds= shorted )
iss
C
= Cds+ C
oss
gd
C
= C
rss
gd
1
10
@ Note : TJ = 25 oC
1
10
o
25
C
, Drain Current [A]
D
I
0
10
2 4 6 8 10
- 55
o
C
@ Notes :
1. V
2. V
3. 250
= 0 V
GS
= 40 V
DS
s Pulse Test
µ
VGS , Gate-Source Voltage [V]
Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current
2
10
1
10
, Reverse Drain Current [A]
o
175
C
DR
I
0
10
o
25
C
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
@ Notes :
1. V
= 0 V
GS
2. 250 µs Pulse Test
VSD , Source-Drain Voltage [V]
Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage
V
= 20 V
10
V
DS
VDS = 80 V
DS
= 50 V
4000
C
oss
Capacitance [pF]
2000
C
rss
0
0
10
VDS , Drain-Source Voltage [V]
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
5
, Gate-Source Voltage [V]
GS
V
1
10
0
0 20 40 60 80 100 120 140 160
QG , Total Gate Charge [nC]
@ Notes : ID =70.0 A
Page 4
SSH70N10A
Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature
1.2
1.1
3.0
2.5
2.0
POWER MOSFET
N-CHANNEL
1.0
, (Normalized)
DSS
BV
0.9
Drain-Source Breakdown Voltage
0.8
-75 -50 -25 0 25 50 75 100 125 150 175 200
@ Notes :
1. V
2. I
TJ , Junction Temperature [oC]
3
10
2
10
1
10
, Drain Current [A]
D
I
0
10
-1
10
0
10
Operation in This Area
is Limited by R
DS(on)
@ Notes :
= 25 oC
1. T
C
2. T
= 175 oC
J
3. Single Pulse
1
10
1 ms
10 ms
DC
VDS , Drain-Source Voltage [V]
100
= 0 V
GS
= 250 µA
D
s
µ
10
10 µs
2
1.5
, (Normalized)
1.0
DS(on)
R
0.5
Drain-Source On-Resistance
0.0
-75 -50 -25 0 25 50 75 100 125 150 175 200
@ Notes :
1. V
2. I
TJ , Junction Temperature [oC]
Fig 10. Max. Drain Current vs. Case TemperatureFig 9. Max. Safe Operating Area
80
60
40
, Drain Current [A]
D
20
I
0
25 50 75 100 125 150 175
Tc , Case Temperature [oC]
= 10 V
GS
= 35.0 A
D
0
10
D=0.5
0.2
-1
10
0.1
0.05
0.02
0.01
-2
(t) , Thermal Response
10
JC
θ
Z
-5
10
single pulse
-4
10
t1 , Square Wave Pulse Duration [sec]
Fig 11. Thermal Response
@ Notes :
1. Z
2. Duty Factor, D=t
3. TJM-TC=PDM*Z
P
DM
-3
10
-2
10
10
(t)=0.5 oC/W Max.
JC
θ
t
1
t
2
-1
10
1/t2
(t)
JC
θ
0
1
10
Page 5
N-CHANNEL
POWER MOSFET
SSH70N10A
Fig 12. Gate Charge Test Circuit & Waveform
10V
“ Current Regulator
200nF12V
3mA
Current Sampling (IG)
V
R
G
50K
”
Same Type
Ω
300nF
V
GS
as DUT
V
GS
Q
10V
V
DS
Q
gs
g
Q
gd
DUT
R
1
Resistor
Fig 13. Resistive Switching Test Circuit & Waveforms
V
out
in
DUT
R
2
Current Sampling (ID)
Resistor
R
L
V
DD
( 0.5 rated V
Charge
V
out
90%
)
DS
10%
V
in
t
d(on)tr
t
on
t
d(off)
t
f
t
off
Vary tp to obtain
required peak I
10V
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BV
L
DUT
L
BV
I
D
C
V
DD
DSS
I
AS
V
DD
V
DS
D
R
G
t
p
E
= LL I
AS
1
---2
2
AS
(t)
I
D
t
p
DSS
-------------------BV
-- V
DSS
DD
Time
V
(t)
DS
Page 6
SSH70N10A
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
N-CHANNEL
POWER MOSFET
V
V
GS
( Driver )
DUT
+
V
DS
--
I
S
L
V
GS
GS
Driver
R
G
D =
Same Type
as DUT
• dv/dt controlled by “RG”
• I
controlled by Duty Factor “D”
S
Gate Pulse Width
-------------------------Gate Pulse Period
V
DD
10V
I
S
( DUT )
V
DS
( DUT )
IFM , Body Diode Forward Current
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
f
Body Diode
Forward Voltage Drop
di/dt
V
DD
Page 7
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
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TM
FACT™
FACT Quiet Series™
®
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POP™
PowerTrench™
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Quiet Series™
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STA TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
Formative or
In Design
First Production
Full Production
Not In Production
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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