Datasheet SSH22N50A Datasheet (Fairchild)

$GYDQF HG 3RZH U 026)(7

SSH22N50A

FEATURES

Avalanche Rugged Technology

♦

Rugged Gate Oxide Technology

♦

Lower Input Capacitance

♦

Improved Gate Charge

♦

Extended Safe Operating Area

♦

Lower Leakage Current: 10µA (Max.) @ V

♦

Lower R

♦

: 0.197Ω (Typ.)

DS(ON)

Absolute Maximum Ratings

Characteristic Value UnitsSymbol

Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Drain Current-Pulsed
Gate-to-Source Volta ge
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TC=25°C)
Linear Derating Factor
Operating Juncti on and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8

from case for 5-seconds

T

V

DSS

I

D

I

DM

V
E

I

AR

E

dv/dt

P

, T

J

T

GS
AS

AR

D

STG

L

= 500V

DS

=25°C)

C

=100°C)

C

(1)

(2)
(1)
(1)
(3)

BV
R

DSS

DS(on)

= 500 V

ID = 22 A

TO-3P

1

2

3

1.Gate 2. Drain 3. Source

500

22

13.4
88

30

±

2151

22

27.8

3.5

278

2.22

- 55 to +150

300

= 0.25Ω

V
A
A

V

mJ

A

mJ

V/ns

W

W/°C

°C

Thermal Resistance

R

θJC

R

CS

θ

R

θJA

©1999 Fairchild Semiconductor Corpor ation

Characteristic Max. UnitsSymbol Typ.

Junction-to-Case

Case-to-Sink

Junction-to-Ambient

--

0.24

--

0.45

--

40

°C/W

Rev. B

SSH22N50A

1&+$1 1(/

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Electrical Characteristics

CharacteristicSymbol

BV
∆BV/∆T
V

I

I

R

C
C
t

t

DSS

GS(th)

GSS

DSS

DS(on)

g

fs

C

iss
oss
rss

d(on)

t

r

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.

J

Gate Threshold Voltage
Gate-Source Leakage , Forwar d
Gate-Source Leakage , Revers e

Drain-to-Sou rce Leakage Current

Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain (

Miller ) Charge

(TC=25°C unless otherwise specified)

Max. UnitsTyp.Min. Test Condition

V

500

--

2.0

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

0.69

--

--

--

--

--

--

17.31
3940

465
215

27
30

150

43

182

26

79.6

--

--

4.0

100

-100
10

100

0.25

--

5120

535
250

65
70

310

95

236

--

--

V

V/°C

V

nA

A

µ

Ω

pF

ns

nC

=0V,ID=250µA

GS

I

=250µA

D

VDS=5V,ID=250µA

=30V

V

GS

=-30V

V

GS

V

=500V

DS

V

=400V,TC=125°C

DS

=10V,ID=11A

V

GS

Ω

VDS=50V,ID=11A
V

=0V,VDS=25V,f =1MHz

GS

See Fig 5

VDD=250V,ID=22A,
R

=5.3

G

VDS=400V,VGS=10V,

=22A

I

D

See Fig 6 & Fig 12

See Fig 7

Ω

See Fig 13

(4)

(4)

(4) (5)

(4) (5)

Source-Drain Diode Ratings and Characteristics

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

I

I

SM

V

t

Q

Notes;

(1) Repetitive Rating: Pu lse Width Limited by Maximum Junction Temperatu re
(2) L=8mH, I
(3) I

(4) Pulse Test: Pulse Width = 250µs, Duty Cycle ≤ 2%
(5) Essentially Independent of Operating Temper ature

Continuous Source Current

S

Pulsed- S o u rce Curren t
Diode Forward Voltage

SD

Reverse Recove ry T ime

rr

Reverse Recovery Ch arge

rr

=22A, VDD=50V, RG=27Ω, Starting TJ =25°C

AS

22A, di/dt ≤ 300A/µs, V

≤

SD

DD

, Starting TJ =25°C

BV

≤

DSS

--

--

22

(1)

--

(4)

--

--

--

--

528

--

8.35

88

1.4

--

--

ns

µ

A
V

C

Integral reverse pn-diode
in the MOSFET
T

=25°C,IS=22A,VGS=0V

J

T

=25°C,IF=22A

J

di

/dt=100A/µs

F

(4)

µ

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Fig 1. Output Characteristics Fig 2. Transfer Characteristics

V

GS

Top : 1 5 V
1 0 V

8.0 V
7 .0 V

6.0 V
5 .5 V

1

5 .0 V

10

Bott om : 4.5 V

0

, Drain C urrent [A]

10

D

I

-1

10

VDS , Drain-S ource Voltage [V]

@ Notes :

1. 250 µs Pulse Test

2. TC = 25 oC

0

10

SSH22N50A

1

10

150 oC

0

10

25 oC

, Drai n Current [A]

D

I

- 55 oC

-1

1

10

10

246810

VGS , Gate -Source Voltag e [V]

@ Notes :

1. V

2. V

3. 250

= 0 V

GS

= 50 V

DS

s Pulse Test

µ

0.60

0.45

]

Ω

, [

DS(on)

R

0.30

0.15

VGS = 10 V

VGS = 20 V

Drain-Source On-Resis tance

@ Note : TJ = 25 oC

0.00
0153045607590

ID , Drain Current [A]

Capacitanc e [pF]

6000

4000

2000

C

iss

C

oss

C

rss

0

0

10

C

= Cgs+ Cgd ( Cds= shorted )

iss

= Cds+ C

C

oss

gd

C

= C

rss

gd

@ Notes :

1. V

2. f = 1 MHz

1

10

GS

VDS , Drain-S ource Voltage [V]

= 0 V

Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Curr ent

1

10

0

10

, Reverse Dra in Current [A]

DR

150 oC

I

25 oC

-1

10

0.40.60.81.01.21.41.61.82.02.2

@ Notes :

1. V

2. 250

= 0 V

GS

s Pulse Test

VSD , Source-Drai n Voltage [V]

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Sour ce Voltage

10

5

, Gate -Source Voltag e [V]

GS

V

0

050100150200

VDS = 100 V

VDS = 250 V

VDS = 400 V

@ Notes : ID = 22.0 A

QG , Tota l Gate Charge [nC]

SSH22N50A

Fig 7. Breakdown Voltage vs. Temperat ure Fig 8. On-Resistance vs. Temperature

1.2

1.1

3.0

2.5

2.0

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1&+$11(/

1.0

, (Norm alized)

DSS

BV

0.9

Drain-So urce Breakdown Volt age

0.8

-75 -50 -25 0 25 50 75 100 125 150 175

@ Notes :

1. V

2. I

TJ , Junct ion Temperature [oC]

Operation in This Area

2

10

is Limited by R

DS(on)

100 µs

1 ms

10 ms

DC

2

10

, Drain Current [A]
I

1

10

0

10

D

-1

10

0

10

@ Notes :

= 25 oC

1. T

C

2. T

= 150 oC

J

3. Single Pulse

1

10

VDS , Drain -Source Voltage [V ]

= 0 V

GS

= 250 µA

D

10 µs

1.5

, (Nor malized)

1.0

DS(on)

R

0.5

Drain-Source On-Resistance

0.0

-75-50-25 0 25 50 75 100125150175

@ Notes :

1. V

2. I

= 10 V

GS

= 11.0 A

D

TJ , Junc tion Temperature [oC]

Fig 10. Max. Drain Current vs. Case TemperatureFig 9. Max. Safe Operating Area

25

20

15

10

, Drai n Current [A]

D

I

5

3

10

0

25 50 75 100125150

Tc , Case Temperature [oC]

-1

10

-2

10

(t) , Thermal Response

JC

θ

Z

-5

10

D=0.5

0.2

0.1

0.05

0.02

0.01

Fig 11. Thermal Response

@ Notes :

1. Z

2. Duty Factor, D=t1/t

(t)=0.45 oC/W Max.

JC

θ

3. TJM-TC=PDM*Z

P

DM

t

single pulse

-4

10

-3

10

-2

10

10

1

t

2

-1

10

t1 , Square Wave Pulse Durat ion [sec]

2

(t)

JC

θ

0

1

10

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SSH22N50A

Fig 12. Gate Charge Test Circuit & Waveform

12V

10V

Current Regulator

200nF

3mA

R

G

50k

Ω

300nF

V

GS

R

1

Current Sampli ng (IG)

Resistor

V

out

V

in

V

Same Type

as DUT

V

GS

Q

10V

DS

Q

gs

DUT

R

2

Current Sampli ng (ID)

Resistor

Fig 13. Resistive Switching Test Circuit & Wavefo rms

R

L

V

out

90%

10%

V

in

t

d(on)tr

t

on

DUT

V

DD

( 0.5 rated V

)

DS

g

Q

gd

Charge

t

d(off)

t

f

t

off

Vary tp to obtain
required peak I

10V

Fig 14. Un clamped Inductive Switching Test Circuit & Waveforms

BV

L

DUT

L

BV

I

D

C

V

DD

DSS

I

AS

V

DD

V

DS

D

R

G

t

p

E

=LL I

AS

----

1
2

2

AS

(t)

I

D

t

p

DSS

-------------------­BV

-- V

DSS

DD

Time

V

(t)

DS

SSH22N50A

Fig 15. Peak D iode Recovery dv/dt Test Circuit & Waveforms

1&+$11(/

32:(5 026)(7

V

V

GS

( Driver )

DUT

+

V

DS

--

I

S

V

GS

GS

Driver

R

G

D =

Same Type

as DUT

dv/dt controlled by R
IS control led by Duty Factor D

Gate Pulse Width

-------------------------­Gate Pulse Period

L

V

DD

G

10V

I

S

( DUT )

V

DS

( DUT )

IFM , Body Diode Forward Cu rrent

I

RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V

f

Body Diode

Forward Voltage Drop

di/dt

V

DD

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not intended to be an exhaustive list of all such trademarks.

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TM

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®

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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:

1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.

2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

Formative or
In Design

First Production

Full Production

Not In Production

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.