Page 1
SSG9575
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The SSG9575 provide the designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and cost-effectiveness.
The SOP-8 is universally preferred for all commercial
industrial surface mount application and suited for low
voltage applications such as DC/DC converters.
Features
* Low on-resistance
* Simple drive requirement
* Fast switching characteristic
Date Code
D D D D
8
6
7
9575SC
-4A, -60V,RDS(ON) 90m
Ω
SOP-8
0.19
0.25
0.40
0.90
6.20
5.80
0.25
1.27Typ.
0.35
0.49
Dimensions in millimeters
5
0.100.25
4.80
5.00
o
45
0.375 REF
3.80
4.00
1.35
o
1.75
0
o
8
D
Absolute Maximum Ratings
Parameter Symbol Ratings Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
3
3
1
Thermal Data
2
1
S S S G
3
VDS
VGS
ID@TA=25
ID@TA=7
IDM
PD@TA=25
Tj, Tstg
G
4
S
V
W
W / C
o
V
A
A
A
o
C
-60
±25
o
C
o
C
0
-4
-3.2
-20
o
C
3
0.02
-55~+150
Parameter
Thermal Resistance Junction-ambient Max.
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Symbol Ratings Unit
o
Rthj-a
50
/W C
Page 1 of 4
Page 2
SSG9575
Elektronische Bauelemente
-6A, -60V,RDS(ON) 90m
P-Channel Enhancement Mode Power Mos.FET
C
C
o
Symbol
BVDSS
BVDS/ Tj
VGS(th)
IGSS
IDSS
RDS(ON)
Qg
Qgs
Qgd
Td(ON)
Tr
Td(Off)
T
f
Ciss
Coss
Crss
Min. Unit
-60
_
-1.0
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
Typ.
_
-0.04
_
_
_
_
_
_
18
5
7
12
5
68
32
1745
165
125
Max.
_
_
-3.0
±
100
-1
-25
90
120
28
_
_
_
_
_
_
2790
_
_
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Drain-Source Leakage Current (Tj=70 )
Static Drain-Source On-Resistance
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
o
o
2
Ω
Test Condition
V
V/
V
nA
uA
uA
m
nC
nS
pF
VGS=0V, ID=-250uA
o
Reference to 25 ,ID=-1mA
C
VDS=VGS, ID=-250uA
±
VGS= 25V
VDS=-60V,VGS=0
VDS=-48V,VGS=0
VGS=-10V, ID=-4A
Ω
VGS=-4.5V, ID=-3A
ID=-4A
VDS=-48V
VGS=-4.5V
VDD=-30V
ID=-1A
VGS=-10V
Ω
RG=3.3
Ω
RD=30
VGS=0V
VDS=-25V
f=1.0MHz
o
C
Forward Transconductance
Gfs
_
_
S7
VDS=-10V, ID=-4
A
Source-Drain Diode
Parameter Symbol Max.
Forward On Voltage VSD
Reverse Recovery Time
Reverse Recovery Charge
2
2
Trr
Qrr
Notes: 1.Pulse width limited by safe operating area.
2.Pulse width 300us, dutycycle 2%.
≦
≦
3.Surface mounted on 1 inch2 copper pad of FR4 board; 135OC/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
_
_ _
_
Typ. Test ConditionMin. Unit
_
56
146
-1.2
_
V
nS
nC
IS=-2A, VGS=0V.
Is=-4A, VGS=0V
dl/dt=100A/us
Page 2 of 4
Page 3
SSG9575
Elektronische Bauelemente
Characteristics Curve
Fig 1. Typical Output Characteristics
-4A, -60V,RDS(ON) 90m
Ω
P-Channel Enhancement Mode Power Mos.FET
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Page 3 of 4
Page 4
SSG9575
Elektronische Bauelemente
-4A, -60V,RDS(ON) 90m
P-Channel Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Ω
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Circuit Fig 12. Gate Charge Waveform
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 4 of 4
Loading...