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SSG9475
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The SSG9475 provide the designer with the best Combination of fast switching,
ruggedized device design, Ultra low on-resistance and cost-effectiveness.
The SOP-8 is universally preferred for all commercial
industrial surface mount application and suited for low
voltage applications such as DC/DC converters.
Features
* Simple drive requirement
* Low gate charge
* Fast switching Characteristic
Date Code
D D D D
8
6
7
9475SC
6.9A, 60V,RDS(ON) 40m
Ω
SOP-8
0.19
0.25
0.40
0.90
6.20
5.80
0.25
1.27Typ.
0.35
0.49
Dimensions in millimeters
5
G
0.100.25
4.80
5.00
o
45
0.375 REF
3.80
4.00
1.35
o
1.75
0
o
8
D
Absolute Maximum Ratings
Parameter Symbol Ratings Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
3
3
1
Thermal Data
Parameter
Thermal Resistance Junction-ambient
2
1
S S S G
3
VDS
VGS
ID@TA=25
ID@TA=7
IDM
PD@TA=25
Tj, Tstg
Symbol Ratings Unit
Max.
Rthj-a
4
60
±25
o
C
o
0
C
6.9
5.5
30
o
C
2.5
0.02
-55~+150
50
S
V
V
A
A
A
W
o
W / C
o
C
o
/W C
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
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SSG9475
Elektronische Bauelemente
6.9A, 60V,RDS(ON) 40m
N-Channel Enhancement Mode Power Mos.FET
C
o
C
o
BVDSS
BVDS/ Tj
VGS(th)
IGSS
IDSS
RDS(ON)
Qg
Qgs
Qgd
Td(ON)
Tr
Td(Off)
T
f
Ciss
Coss
Crss
Min. Unit
60
_
1.0
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
Typ.
_
0.073
_
_
_
_
_
_
19
5
10
11
6
35
10
1670
160
116
_
_
3.0
±
100
1
25
40
50
30
_
_
_
_
_
_
2670
_
_
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter Symbol Max.
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Drain-Source Leakage Current (Tj=70 )
Static Drain-Source On-Resistance
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
o
2
Ω
Test Condition
V
V/
V
nA
uA
uA
m
nC
nS
pF
VGS=0V, ID=250uA
o
Reference to 25 ,ID=1mA
C
VDS=VGS, ID=250uA
±
VGS= 25V
VDS=60V,VGS=0
VDS=48V,VGS=0
VGS=10V, ID=6A
Ω
VGS=4.5V, ID=4A
ID=6A
VDS=48V
VGS=4.5V
VDD=30V
ID=1A
VGS=10V
Ω
RG=3.3
Ω
RD=30
VGS=0V
VDS=25V
f=1.0MHz
o
C
Forward Transconductance
Gate Resistance
Gfs
Rg
_
_
1.58
_
_
S10
Ω
VDS=10V, ID=6A
f=1.0MHz
Source-Drain Diode
Parameter Symbol Max.
≦
2
2
Trr
nC
Qrr
_ _
_
≦
Forward On Voltage VDS
Reverse Recovery Time
Reverse Recovery Charge
Notes: 1.Pulse width limited by safe operating area.
2.Pulse width 300us, dutycycle 2%.
3.Surface mounted on 1 inch2 copper pad of FR4 board; 125OC/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Typ. Test ConditionMin. Unit
34
50
__
1.2
_
V
nS
IS=2A, VGS=0V.
Is=6A, VGS=0V
dl/dt=100A/us
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SSG9475
Elektronische Bauelemente
Characteristics Curve
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristics of
Reverse Diode
N-Channel Enhancement Mode Power Mos.FET
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6.9A, 60V,RDS(ON) 40m
Ω
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SSG9475
Elektronische Bauelemente
6.9A, 60V,RDS(ON) 40m
N-Channel Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Ω
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Fig 10. Effective Transient Thermal Impedance
Fig 12. Gate Charge Waveform
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