Datasheet ssg6680 Datasheet

SSG6680

Elektronische Bauelemente

N-Channel Enhancement Mode Power Mos.FET

RoHS Compliant Product

Description

The SSG6680 provide the designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

The SOP-8 is universally preferred for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC converters.

Features

* Surface Mount Package * High Vgs Max. Rating Voltage

* Low On-Resistance

Date Code

11.5A, 30V,RDS(ON) 11m

SOP-8

0.40

0.90

6.20

5.80

0.25

1.27Typ.

0.35

0.49

D D D D

8

6

7

6680SC

Dimensions in millimeters

5

0.100.25

4.80

5.00

o

0

o

8

G

Ω

0.19

0.25

o

45

0.375 REF

3.80

4.00

1.35

1.75

D

Absolute Maximum Ratings

Parameter Symbol Ratings Unit

Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current

Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range

3

1

Thermal Data

Parameter

Thermal Resistance Junction-ambient Max.

3

2

1

3

4

S S S G

VDS

VGS ID@TA=25 ID@TA=7

IDM

PD@TA=25

o

C

o

0

C

o

C

30

±25

11.5

9.5

50

2.5

0.02

Tj, Tstg

-55~+150

Symbol Ratings Unit

Rthj-a

50

V V

A A

A

W / C

o

S

W

o

C

/W C

http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 5

SSG6680

11.5A, 30V,RDS(ON) 11m

Elektronische Bauelemente

Electrical Characteristics( Tj=25 C Unless otherwise specified)

Parameter Symbol Max.

Drain-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Gate Threshold Voltage

Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 ) Drain-Source Leakage Current (Tj=70

Static Drain-Source On-Resistance

Total Gate Charge

2

Gate-Source Charge

Gate-Drain ("Miller") Charge Turn-on Delay Time

2

Rise Time

Turn-off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

o

C

o

C

2

)

o

BVDSS

BVDS/ Tj

VGS(th)

IGSS

IDSS

RDS(ON)

Qg Qgs

Qgd

Td(ON)

Tr

(Off)

Td

T

f

Ciss

Coss

Crss

N-Channel Enhancement Mode Power Mos.FET

Min. Unit

30

_

1.0

_

Typ.

_

0.02

_

16.8

4.2 8

8.9

7.3

25.6

18.6

1450

285

180

_

3.0

±

100

1

25 11 18

_

V

o

V/

C

V

nA

uA

Ω

m

nC

nS

pF

Ω

Test Condition

VGS=0V, ID=250uA

±

Ω

o

C

Reference to 25 , ID=1mA

VDS=VGS, ID=250uA

VGS= 25A

VDS=30V,VGS=0

VDS=24V,VGS=0

VGS=10V, ID=11.5A

VGS=4.5V, ID=9.5A

ID=11.5A VDS=15V VGS=5V

VDD=15V

ID=1A VGS=10V RG=5.5

RD=10

VGS=0V VDS=25V

f=1.0MHz

Forward Transconductance

Gfs

_

30

_

S

VDS=15V, ID=11.5A

Source-Drain Diode

Parameter Symbol Max.

≦

2

Is A

_ _

≦

Forward On Voltage VDS

Continuous Source Current (Body Diode)

Notes: 1.Pulse width limited by Max. junction temperature

2.Pulse width 300us, dutycycle 2%.

3.Surface mounted on 1 inch2 copper pad of FR4 board; 125 when mounted on min. copper pad.

http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Typ. Test ConditionMin. Unit

°

C/W

__

1.3

1.92

V

IS=3 5. A,VGS=0V,Tj=25 C

VD=VG=0V, VS=1.3V

o

Page 2 of 5

SSG6680

Elektronische Bauelemente

Characteristics Curve

Fig 1. Typical Output Characteristics

11.5A, 30V,RDS(ON) 11m

Ω

N-Channel Enhancement Mode Power Mos.FET

Fig 2. Typical Output Characteristics

Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance

v.s. Junction Temperature

http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Fig 5. Maximum Drain Current

v.s. Case Temperature

Fig 6. Type Power Dissipation

Page

3 of 5

SSG6680

Ω

Elektronische Bauelemente

11.5A, 30V,RDS(ON) 11m

N-Channel Enhancement Mode Power Mos.FET

Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance

Fig 9. Gate Charge Characteristics

Fig 11. Forward Characteristics of Reverse Diode

http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Fig 10. Typical Capacitance Characteristics

Fig 12. Gate Threshold Voltage v.s.

Junction Temperature

Page 4 of 5

SSG6680

11.5A, 30V,RDS(ON) 11m

Elektronische Bauelemente

N-Channel Enhancement Mode Power Mos.FET

Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform

Ω

Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform

http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 5 of 5