Page 1
DS(ON)
SOP-8
A
H
B
M
D
C
J
K
F
L
E
N
G
5509A
SS
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSG5509A uses advanced trench technology to
provide excellent on-resistance extremely efficient and
cost-effectiveness device. The SOP-8 package is universally
preferred for all commercial-industrial surface mount
applications and suited for low voltage applications such as
DC/DC converters.
FEATURES
Lower Gate Charge
RoHS Compliant
MARKING CODE
=
Date Code
PACKAGE INFORMATION
SSG5509A
N & P-Ch Enhancement Mode Power MOSFET
N-Ch: 6.1 A, 30 V, R
P-Ch: -4.8 A, -30 V, R
REF.
Millimeter
Min. Max.
A 5.80 6.20 H 0.35 0.49
B 4.80 5.00 J 0.375 REF.
C 3.80 4.00 K 45°
D 0° 8° L 1.35 1.75
E 0.40 0.90 M 0.10 0.25
F 0.19 0.25 N 0.25 REF.
G 1.27 TYP.
DS(ON)
30 mΩ
ΩΩΩ
55 mΩΩΩΩ
REF.
Millimeter
Min. Max.
Package MPQ Leader Size
SOP-8 3K 13 inch
MAXIMUM RATINGS
Drain-Source Voltage VDS 30 -30 V
Gate-Source Voltage VGS ±12 ±12 V
Continuous Drain Current3
Pulsed Drain Current1 IDM 30 -30 A
Total Power Dissipation PD 2 W
Operating Junction and Storage Temperature Range
Linear Derating Factor 0.016 W / °C
Maximum Thermal Resistance Junction-ambient 3 R
(TA = 25°C unless otherwise specified)
Parameter Symbol
TA=25℃℃℃℃
TA=70℃℃℃℃ 4.9 -3.8 A
TJ, T
ID
STG
Thermal Resistance Ratings
62.5 °C / W
θJA
Ratings
N-Ch P-Ch
6.1 -4.8 A
-55~150 °C
Unit
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
27-Jun-2011 Rev. A Page 1 of 7
Page 2
DS(ON)
SSG5509A
N & P-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
P-Ch: -4.8 A, -30 V, R
N-Ch: 6.1 A, 30 V, R
DS(ON)
30 mΩ
ΩΩΩ
55 mΩΩΩΩ
N-CHANNEL ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise specified)
Parameter Symbol Min. Typ. Max. Unit
Drain-Source Breakdown Voltage BV
Gate Threshold Voltage V
Forward Transconductance g
Gate-Source Leakage Current I
DSS
GS(th)
fs
GSS
Drain-Source Leakage Current(TJ =25℃℃℃℃)
I
DSS
Drain-Source Leakage Current(TJ =70℃℃℃℃)
Static Drain-Source On-Resistance R
DS(ON)
Total Gate Charge2 Qg - 9.7
Gate-Source Charge Qgs - 1.6 Gate-Drain (“Miller”) Change Qgd - 3.1 Turn-on Delay Time2 T
d(on)
Rise Time Tr - 4.8 Turn-off Delay Time T
d(off)
Fall Time Tf -
30 - - V VGS=0, ID=250µA
0.5 - 1.2 V VDS=VGS, ID=250µA
- 15 - S VDS=5V, ID=5A
- - ±100 nA VGS= ±12V
- - 1 µA VDS=24V, VGS=0
- - 25 µA VDS=24V, VGS=0
- - 30
- - 35 VGS=4.5V, ID=5A
55 VGS=2.5V, ID=4A
- 3.3 -
- 26.3
4.1
Test Conditions
VGS=10V, ID=5.8A
mΩ
ID=5.8A
nC
VDS=15V
VGS=4.5V
VDS=15V
VGS=10V
nS
-
-
RG=3Ω
RL=2.7Ω
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
- 823 -
iss
- 99 -
oss
- 77 -
rss
pF
VGS=0
VDS=15V
f=1.0 MHz
Source -Drain Diode
Forward On Voltage2 VSD - - 1.0 V IS=1A, VGS=0
Reverse Recovery Time2 Trr - 16 - nS
Reverse Recovery Charge Qrr - 8.9 - nC
Continuous Source Current (Body Diode) IS - - 2.5 A VD=VG=0, VS=1.0V
Notes:
1. Pulse width limited by Max. junction temperature.
2. Pulse width≦300us, duty cycle≦2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 135 °C/W when mounted on Min. copper pad.
IS=5A, VGS=0,
dl/dt =100A/µs
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
27-Jun-2011 Rev. A Page 2 of 7
Page 3
DS(ON)
SSG5509A
N & P-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
P-Ch: -4.8 A, -30 V, R
N-Ch: 6.1 A, 30 V, R
DS(ON)
30 mΩ
ΩΩΩ
55 mΩΩΩΩ
P-CHANNEL ELECTRICAL CHARACTERISTICS
(TJ=25°C unless otherwise specified)
Parameter Symbol Min. Typ. Max. Unit
Drain-Source Breakdown Voltage BV
Gate Threshold Voltage V
Forward Transconductance g
Gate-Source Leakage Current I
DSS
GS(th)
fs
GSS
Drain-Source Leakage Current(TJ =25℃℃℃℃)
I
DSS
Drain-Source Leakage Current(TJ =70℃℃℃℃)
Static Drain-Source On-Resistance R
DS(ON)
Total Gate Charge2 Qg - 9.4 Gate-Source Charge Qgs - 2 Gate-Drain (“Miller”) Change Qgd - 3 Turn-on Delay Time2 T
d(on)
Rise Time Tr - 3.2 Turn-off Delay Time T
d(off)
Fall Time Tf - 12 -
-30 - - V VGS=0, ID= -250µA
-0.5 - -1.2 V VDS=VGS, ID= -250µA
- 11 - S VDS= -5V, ID= -5A
- - ±100 nA VGS= ±12V
- - -1 µA VDS= -24V, VGS=0
- - -25 µA VDS= -24V, VGS=0
- - 55
- - 70 VGS= -4.5V, ID= -4A
- - 120 VGS= -2.5V, ID= -1A
- 6.3 -
- 38.2
Test Conditions
VGS= -10V, ID= -4.2A
mΩ
ID= -4 A
nC
VDS= -15V
VGS= -4.5V
VDS= -15V
VGS= -10V
nS
-
RG=6Ω
RL=3.6Ω
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
- 954 -
iss
- 115 -
oss
- 77 -
rss
pF
VGS=0
VDS= -15V
f=1.0 MHz
Source -Drain Diode
Forward On Voltage2 VSD - - -1.0 V IS= -1A, VGS=0
Reverse Recovery Time2 Trr - 20.2
Reverse Recovery Charge Qrr - 11.2
-
- nC
nS
IS= -4A, VGS=0,
dl/dt=100A/µs
Continuous Source Current (Body Diode) IS - - -2.2 A VD=VG=0, VS= -1V
Notes:
1. Pulse width limited by Max. junction temperature.
2. Pulse width≦300us, duty cycle≦2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 135 °C/W when mounted on Min. copper pad.
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
27-Jun-2011 Rev. A Page 3 of 7
Page 4
DS(ON)
Elektronische Bauelemente
CHARACTERISTIC CURVE (N-Ch)
SSG5509A
N & P-Ch Enhancement Mode Power MOSFET
N-Ch: 6.1 A, 30 V, R
P-Ch: -4.8 A, -30 V, R
DS(ON)
30 mΩ
55 mΩΩΩΩ
ΩΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
27-Jun-2011 Rev. A Page 4 of 7
Page 5
DS(ON)
Elektronische Bauelemente
CHARACTERISTIC CURVE (N-Ch)
SSG5509A
N & P-Ch Enhancement Mode Power MOSFET
N-Ch: 6.1 A, 30 V, R
P-Ch: -4.8 A, -30 V, R
DS(ON)
30 mΩ
ΩΩΩ
55 mΩΩΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
27-Jun-2011 Rev. A Page 5 of 7
Page 6
DS(ON)
Elektronische Bauelemente
CHARACTERISTIC CURVE (P-Ch)
SSG5509A
N & P-Ch Enhancement Mode Power MOSFET
N-Ch: 6.1 A, 30 V, R
P-Ch: -4.8 A, -30 V, R
DS(ON)
30 mΩ
ΩΩΩ
55 mΩΩΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
27-Jun-2011 Rev. A Page 6 of 7
Page 7
DS(ON)
Elektronische Bauelemente
CHARACTERISTIC CURVE (P-Ch)
SSG5509A
N & P-Ch Enhancement Mode Power MOSFET
N-Ch: 6.1 A, 30 V, R
P-Ch: -4.8 A, -30 V, R
DS(ON)
30 mΩ
ΩΩΩ
55 mΩΩΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
27-Jun-2011 Rev. A Page 7 of 7
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