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Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize high cell density process. Low R
DS(on)
assures minimal power loss and conserves
energy, making this device ideal for use in
power management circuitry. Typical applications
are PWMDC-DC converters, power management
in portable and battery-powered products such as
computers, printers, battery charger, telecommunication
power system, and telephones power system.
FEATURES
Low R
battery life.
Miniature SOP-8 surface mount package saves
board space.
High power and current handling capability..
Extended V
provides higher efficiency and extends
DS(on)
range (±25) for battery pack applications.
GS
PACKAGE INFORMATION
Package MPQ LeaderSize
SOP-8 2.5K 13’ inch
SSG4953P
-5.2 A, -30 V, R
Dual P-Ch Enhancement Mode Power MOSFET
H
REF.
Min. Max.
A 5.80 6.20 H 0.35 0.49
B 4.80 5.00 J 0.375 REF.
C 3.80 4.00 K 45°
D0° 8° L 1.35 1.75
E 0.40 0.90 M 0.10 0.25
F 0.19 0.25 N 0.25 REF.
G 1.27 TYP.
S
G
S
G
52 m
DS(ON)
SOP-8
B
A
G
Millimeter Millimete
REF.
C
J
Min. Max.
D
L
M
N
K
E
F
D
D
D
D
MAXIMUM RATINGS (T
= 25°C unless otherwise specified)
A
Parameter Symbol Ratings Unit
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±25 V
Continuous Drain Current 1
Pulsed Drain Current 2 I
Continuous Source Current (Diode Conduction) 1 I
Power Dissipation 1
Operating Junction & Storage Temperature Range TJ, T
TA = 25°C -5.2 A
T
= 70°C
A
TA = 25°C 2.1 W
T
= 70°C
A
@
I
D
-30 A
DM
-1.6 A
S
@
P
D
-55 ~ 150 °C
STG
-4.2 A
1.3 W
Thermal Resistance Ratings
Junction to Case (Max.) 1 t≦5 sec R
Junction to Ambient (Max.) 1 t≦10 sec R
40 °C / W
θJC
60 °C / W
θJA
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
15-Jan-2011 Rev. B Page 1 of 4
Page 2
SSG4953P
-5.2 A, -30 V, R
Elektronische Bauelemente
Dual P-Ch Enhancement Mode Power MOSFET
DS(ON)
52 m
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise specified)
A
Parameter Symbol Min. Typ. Max. Unit Teat Conditions
Static
Gate Threshold Voltage V
Gate-Body Leakage Current I
Zero Gate Voltage Drain Current I
On-State Drain Current 1 I
Drain-Source On-Resistance 1 R
Forward Transconductance 1 g
Diode Forward Voltage VSD - -0.7 - V IS= -2.1A, VGS= 0V
-1 - - V VDS= VGS, ID= -250μA
GS(th)
- - ±100 nA VDS= 0V, VGS= ±25V
GSS
DSS
-30 - - A VDS= -5V, VGS= -10V
D(on)
DS(ON)
- 19 - S VDS= -15V, ID= -5.2A
fs
- - -1 μA VDS= -24V, VGS= 0V
- - -5 μA V
- - 52 VGS= -10V, ID= -5.2A
mΩ
- - 89
= -24V, VGS= 0V, TJ=55°C
DS
V
= -4.5V, ID= -4.0A
GS
Dynamic 2
Total Gate Charge Qg - 15 -
Gate-Source Charge Qgs - 2.2 -
Gate-Drain Charge Qgd - 1.7 -
nC
ID= -5.2A
V
= -15V
DS
V
= -10V
GS
Turn-On Delay Time T
Rise Time Tr - 2.8 -
Turn-Off Delay Time T
Fall Time Tf - 46 -
Notes:
1. Pulse test：PW ≦ 300μs duty cycle ≦ 2%.
2. Guaranteed by design, not subject to production testing.
- 10 -
d(on)
- 53.6 -
d(off)
nS
= -15V
V
DD
I
= -1A
D
V
= -10V
GEN
R
= 15Ω, RG= 6Ω
L
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
15-Jan-2011 Rev. B Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVES
SSG4953P
-5.2 A, -30 V, R
Dual P-Ch Enhancement Mode Power MOSFET
DS(ON)
52 m
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
15-Jan-2011 Rev. B Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVES
SSG4953P
-5.2 A, -30 V, R
Dual P-Ch Enhancement Mode Power MOSFET
DS(ON)
52 m
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
15-Jan-2011 Rev. B Page 4 of 4
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