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SSG4953
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
Description
The SSG4953 provide the designer with the best Combination of fast switching,
ruggedized device design, Ultra low on-resistance and cost-effectiveness.
The SOP-8 is universally preferred for all commercial
industrial surface mount application and suited for low
voltage applications such as DC/DC converters.
Features
* Low on-resistance
* Simple drive requirement
* Fast switching Characteristic
Date Code
D1 D1 D2 D2
8
6
7
4953SS
5
-5A, -30V,RDS(ON) 53m
SOP-8
0.40
0.90
6.20
5.80
0.25
4.80
5.00
G2
0.100.25
o
0
o
8
G1
1.27Typ.
0.35
0.49
Dimensions in millimeters
D1
Ω
1.35
1.75
0.19
0.25
D2
o
45
0.375 REF
3.80
4.00
Absolute Maximum Ratings
Parameter Symbol Ratings Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
3
3
1
Thermal Data
Parameter
Thermal Resistance Junction-ambient (Max)
3
2
1
S1 G1 S2 G2
3
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
Tj, Tstg
Symbol Ratings Unit
Rthj-a
4
S1
-30
±20
o
C
o
C
-5
-4
-20
o
C
2
0.016
-55~+150
62.5
S2
W / C
o
V
V
A
A
A
W
o
o
C
/W C
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
23-Jun-2010 Rev. D
Page 1 of 4
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SSG4953
Elektronische Bauelemente
-5A, -30V,RDS(ON) 53m
P-Channel Enhancement Mode Power Mos.FET
o
o
)
C
C
o
BVDSS
BVDS/ Tj
VGS(th)
IGSS
IDSS
RDS(ON)
Qg
Qgs
Qgd
Td(ON)
Td
Ciss
Coss
Crss
Tr
T
(Off)
f
Min. Unit
-30
_
-1.0
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
Typ.
_
-0.1
_
_
_
_
_
_
11.7
2.1
2.9
9
10
37
23
582
125
86
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter Symbol Max.
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Drain-Source Leakage Current (Tj=70
Static Drain-Source On-Resistance
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
2
_
_
-2.5
±
100
-1
-25
53
90
_
_
_
_
_
_
_
_
_
_
_
_
Ω
Test Condition
V
V/
V
nA
uA
uA
m
nC
nS
pF
VGS=0V, ID=-250uA
o
Reference to 25 ,I D=-1mA
C
VDS=VGS, ID=-250uA
±
VGS= 20V
VDS=-30V,VGS=0
VDS=-24V,VGS=0
VGS=-10V, ID=-5A
Ω
VGS=-4.5V, ID=-4A
ID=-5A
VDS=-15V
VGS=-10V
5V
VDD=-1
ID=-1A
VGS=-10V
RG=6
Ω
Ω
RD=15
VGS=0V
VDS=-15V
f=1.0MHz
o
C
Forward Transconductance
Gfs
__
S5
VDS=-5V, ID=-5A
Source-Drain Diode
Parameter Symbol Max.
Forward On Voltage VDS
Reverse Recovery Time
Reverse Recovery Charge
Notes: 1.Pulse width limited by safe operating area.
2.Pulse width 300us, dutycycle 2%.
3.Surface mounted on 1 in copper pad of FR4 board; 135
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
23-Jun-2010 Rev. D
2
≦
2
Trr
Qrr
_ _
_
≦
2
O
C/W when mounted on min. copper pad.
Test ConditionMin. Unit
Typ.
__
-1.2
24
19
_
V
nS
nC
IS=1.7A, VGS=0V.
Is=-5A, V
GS=0V
dl/dt=100A/uS
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SSG4953
Elektronische Bauelemente
Characteristics Curve
Fig 1. Typical Output Characteristics
-5A, -30V,RDS(ON) 53m
Ω
P-Channel Enhancement Mode Power Mos.FET
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
23-Jun-2010 Rev. D
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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SSG4953
Elektronische Bauelemente
-5A, -30V,RDS(ON) 53m
Ω
P-Channel Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
23-Jun-2010 Rev. D
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