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Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize high cell density process. Low R
DS(on)
assures minimal power loss and conserves
energy, making this device ideal for use in
power management circuitry. Typical applications
are PWMDC-DC converters, power management
in portable and battery-powered products such as
computers, printers, battery charger, telecommunication
power system, and telephones power system.
FEATURES
Low R
Miniature SOP-8 surface mount package saves board space.
High power and current handling capability..
Extended V
provides higher efficiency and extends battery life.
DS(on)
range (±25) for battery pack applications.
GS
PRODUCT SUMMARY
PRODUCT SUMMARY
V
(V) R
DS
-30
(on) (m I
DS
21@V
= -10V -7.8
GS
D
(A)
35@VGS= -4.5V -6.0
SSG4935P
P-Ch Enhancement Mode Power MOSFET
-7.8 A, -30 V, R
REF.
S
G
S
G
D
D
D
D
21 m
DS(ON)
SOP-8
B
L
A
H
G
Millimeter
Min. Max. Min. Max.
A 5.80 6.20 H 0.35 0.49
B 4.80 5.00 J 0.375 REF.
C 3.80 4.00 K 45°
D 0° 8° L 1.35 1.75
E 0.40 0.90 M 0.10 0.25
F 0.19 0.25 N 0.25 REF.
G 1.27 TYP.
REF.
C
J
K
F
Millimete
D
M
N
E
(T
MAXIMUM RATINGS
= 25°C unless otherwise specified)
A
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±25 V
I
@ TA = 25°C -7.8 A
Continuous Drain Current a
Pulsed Drain Current b I
Continuous Source Current (Diode Conduction) a I
Total Power Dissipation a
Operating Junction & Storage Temperature Range TJ, T
D
ID @ TA = 70°C -6.2 A
±30 A
DM
-1.7 A
S
PD @ TA = 25°C 2.0 W
PD @ TA = 70°C 1.3 W
-55 ~ 150 °C
STG
THERMAL RESISTANCE RATINGS
Thermal Resistance Junction-ambient (Max.)
t≦10 sec
a
Steady State 110 °C / W
R
θJA
62.5 °C / W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
25-Aug-2010 Rev. A Page 1 of 4
Page 2
SSG4935P
Elektronische Bauelemente
P-Ch Enhancement Mode Power MOSFET
-7.8 A, -30 V, R
DS(ON)
21 m
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Gate Threshold Voltage V
Gate-Body Leakage Current I
Zero Gate Voltage Drain Current I
On-State Drain Current a I
Drain-Source On-Resistance a R
Forward Transconductance a g
A
SYMBO
-1 - -3 V VDS= VGS, ID= -250μA
GS(th)
- - ±100 nA VDS= 0V, VGS= ±25V
GSS
DSS
-40 - - A VDS= -5V, VGS= -10V
D(on)
DS(ON)
- 22 - S VDS= -10V, ID= -7.8A
fs
= 25°C unless otherwise specified)
MIN. TYP. MAX. UNIT TEST CONDITIONS
STATIC
- - -1 μA V
- - -5 μA VDS= -24V, VGS= 0V, TJ=55°C
- 19 21
- 28 35 VGS= -4.5V, ID= -6.0A
mΩ
= -24V, VGS= 0V
DS
V
= -10V, ID= -7.8A
GS
Diode Forward Voltage VSD - -0.7 -1.2 V IS= -1.7A, VGS= 0V
DYNAMIC b
Total Gate Charge Qg - 15 -
Gate-Source Charge Qgs - 5.2 -
Gate-Drain Charge Qgd - 5.8 -
Turn-On Delay Time T
Rise Time Tr - 12 -
Turn-Off Delay Time T
Fall Time Tf - 46 -
Notes
a. Pulse test：PW ≦ 300
b. Guaranteed by design, not subject to production testing.
μs duty cycle ≦ 2%.
- 15 -
d(on)
- 62 -
d(off)
nC
nS
I
= -7.8A
D
VDS= -15V
VGS= -5V
VDD= -15V
ID= -1A
V
= -10V
GEN
= 6Ω
R
L
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
25-Aug-2010 Rev. A Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVES
SSG4935P
P-Ch Enhancement Mode Power MOSFET
-7.8 A, -30 V, R
DS(ON)
21 m
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
25-Aug-2010 Rev. A Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVES
SSG4935P
P-Ch Enhancement Mode Power MOSFET
-7.8 A, -30 V, R
DS(ON)
21 m
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
25-Aug-2010 Rev. A Page 4 of 4
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