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Elektronische Bauelemente
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low R
and to ensure minimal
DS(on)
power loss and heat dissipation. Typical
applications are DC-DC converters and power
management In portable and battery-powered
products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
FEATURES
Low R
extends battery life.
Low thermal impedance copper leadframe
SOP-8 saves board space.
Fast switching speed.
High performance trench technology.
provides higher efficiency and
DS(on)
PACKAGE INFORMATION
Package MPQ LeaderSize
Dual N-Channel Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SSG4932N
10 A, 30 V, R
H
REF.
A 5.80 6.20 H 0.35 0.49
B 4.80 5.00 J 0.375 REF.
C 3.80 4.00 K 45°
D0° 8° L 1.35 1.75
E 0.40 0.90 M 0.10 0.25
F 0.19 0.25 N 0.25 REF.
G 1.27 TYP.
13.5 m
DS(ON)
SOP-8
B
A
G
Millimeter Millimete
Min. Max.
C
J
REF.
Min. Max.
D
L
M
N
K
E
F
SOP-8 2.5K 13’ inch
S
D
G
S
G
D
D
D
MAXIMUM RATINGS (T
= 25°C unless otherwise specified)
A
Parameter Symbol Ratings Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±12 V
Continuous Drain Current 1
Pulsed Drain Current 2 I
Continuous Source Current (Diode Conduction) 1 I
Total Power Dissipation 1
Operating Junction & Storage Temperature Range TJ, T
ID @ TA = 25°C 10 A
I
@ TA = 70°C 8.2 A
D
±50 A
DM
2.3 A
S
PD @ TA = 25°C 2.1 W
P
@ TA = 70°C 1.3 W
D
-55 ~ 150 °C
STG
Thermal Resistance Ratings
Thermal Resistance Junction-Case (Max.)
Thermal Resistance Junction-ambient (Max.)
1
t 5 sec≦ R
1
t 5 sec≦ R
40 °C / W
θJC
60 °C / W
θJA
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
31-Dec-2010 Rev. B Page 1 of 2
Page 2
SSG4932N
10 A, 30 V, R
Elektronische Bauelemente
Dual N-Channel Mode Power MOSFET
DS(ON)
13.5 m
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise specified)
A
Parameter Symbol Min. Typ. Max. Unit Teat Conditions
Drain-Source Breakdown Voltage V
Gate Threshold Voltage V
Gate-Body Leakage Current I
Zero Gate Voltage Drain Current I
On-State Drain Current 1 I
Drain-Source On-Resistance 1 R
Forward Transconductance 1 g
Diode Forward Voltage VSD
Total Gate Charge Qg
Gate-Source Charge Qgs
Gate-Drain Charge Qgd
(BR)DSS
GS(th)
GSS
DSS
D(on)
DS(ON)
fs
Static
100 - -
1 - -
- - ±100
- - 1
- - 25
20 - -
- - 13.5
- - 20
- 40 -
- 0.7 -
Dynamic 2
- 20 -
- 7.0 -
- 7.0 -
V VGS= 0V, ID= 250μA
V VDS= VGS, ID= 250μA
nA VDS= 0V, VGS= 12V
μA V
μA V
= 80V, VGS= 0V
DS
= 80V, VGS= 0V, TJ= 55°C
DS
A VDS= 5V, VGS= 10V
= 4.5V, ID= 10A
V
mΩ
GS
V
= 2.5V, ID= 8A
GS
S VDS= 15V, ID= 10A
V IS= 2.3A, VGS= 0V
= 10A
I
D
V
nC
V
= 15V
DS
= 5V
GS
Turn-On Delay Time T
Rise Time Tr
Turn-Off Delay Time T
Fall Time Tf
Notes:
1. Pulse test：PW ≦ 300
2. Guaranteed by design, not subject to production testing.
μs duty cycle ≦ 2%.
d(on)
d(off)
Switching
- 20 -
- 9 -
- 70 -
nS
V
DD
I
D
V
GEN
R
L
= 1A
= 25V
= 10V
= 25Ω
- 20 -
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
31-Dec-2010 Rev. B Page 2 of 2
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