Page 1
A
H
B
M
D
C
J
K
F
L
E
N
G
Millimeter
Millimeter
Min. Max. Min. Max.
A 5.80 6.20 H 0.35 0.49
B 4.80 5.00 J 0.375 REF.
C 3
.80 4.00 K 45°
D 0° 8° L 1.35 1.75
E 0.40 0.90 M 0.10 0.25
F 0.19 0.25 N 0.25 REF.
G 1.27 TYP.
D
D
S
S
G
G
D
D
SSG4902NA
6.4 A, 60 V, R
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
Dual N-Channel Mode Power MOSFET
DS(ON)
41 mΩ
Ω
ΩΩ
DESCRIPTION
These miniature surface mount MOSFETs utilize
a high cell density process to provide Low R
DS(on)
and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and
power management in portable and battery-powered
products such as computers, printers,
PCMCIA cards,cellular and cordless telephones.
FEATURES
Low R
provides higher efficiency and
DS(on)
extends battery life.
Low thermal impedance copper leadframe
SOP-8 saves board space.
Fast switching speed.
High performance trench technology.
PACKAGE INFORMATION
Package MPQ Leader Size
SOP-8 2.5K 13 inch
SOP-8
REF.
REF.
MAXIMUM RATINGS
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current 1
Pulsed Drain Current 2 IDM 40 A
Continuous Source Current (Diode Conduction) 1 IS 2 A
Total Power Dissipation 1
Operating Junction & Storage Temperature Range TJ, T
Thermal Resistance Junction-Ambient (Max.) 1
Note:
1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
(TA=25°C unless otherwise specified)
Parameter Symbol Ratings Unit
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
ID
PD
-55 ~ 150 °C
STG
6.4 A
5.2 A
2.1 W
1.3 W
Thermal Resistance Ratings
t≦10 sec
Steady State
R
θJA
62.5 °C / W
110 °C / W
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
15-Mar-2012 Rev. A Page 1 of 4
Page 2
SSG4902NA
6.4 A, 60 V, R
Elektronische Bauelemente
Dual N-Channel Mode Power MOSFET
DS(ON)
41 mΩ
Ω
ΩΩ
ELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise specified)
Parameter Symbol Min. Typ. Max. Unit Teat Conditions
Static
Gate Threshold Voltage V
Gate-Body Leakage Current I
Zero Gate Voltage Drain Current I
On-State Drain Current 1 I
Drain-Source On-Resistance 1 R
Forward Transconductance 1 gfs - 11 - S VDS=15V, ID=6.4A
Diode Forward Voltage VSD - - 1.2 V IS=2A, VGS=0
1 - - V VDS=VGS, ID=250µA
GS(th)
- - ±100 nA VDS=0, VGS=20V
GSS
DSS
20 - - A VDS=5V, VGS=10V
D(on)
DS(ON)
- - 1 µA VDS=60V, VGS=0
- - 10 µA VDS=60V, VGS=0, TJ= 55°C
- - 41
- - 52 VGS=4.5V, ID=5.6A
VGS=10V, ID=6.4A
mΩ
Dynamic 2
Total Gate Charge Qg - 12.5 Gate-Source Charge Qgs - 2.4 Gate-Drain Charge Qgd - 2.6 -
nC
ID=6.4A
VDS=30V
VGS=4.5V
Switching
Turn-On Delay Time T
Rise Time Tr - 8 Turn-Off Delay Time T
Fall Time Tf - 6 -
Notes:
1 Pulse test：PW 300µs duty cycle 2%≦ ≦ .
2 Guaranteed by design, not subject to production testing.
- 11 -
d(on)
- 19 -
d(off)
nS
VDD=30V
ID=1A
V
GEN
RL=30Ω
=10V
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
15-Mar-2012 Rev. A Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVES
SSG4902NA
6.4 A, 60 V, R
Dual N-Channel Mode Power MOSFET
DS(ON)
41 mΩ
Ω
ΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
15-Mar-2012 Rev. A Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVES
SSG4902NA
6.4 A, 60 V, R
Dual N-Channel Mode Power MOSFET
DS(ON)
41 mΩ
Ω
ΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
15-Mar-2012 Rev. A Page 4 of 4
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