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Elektronische Bauelemente
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low R
and to ensure minimal
DS(on)
power loss and heat dissipation. Typical
applications are DC-DC converters and power
management in portable and battery-powered
products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
FEATURES
Low R
extends battery life.
Low thermal impedance copper leadframe
SOP-8 saves board space.
Fast switching speed.
High performance trench technology.
provides higher efficiency and
DS(on)
PACKAGE INFORMATION
N-Channel Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SSG4874N
16.8 A, 30 V, R
H
G
Millimeter Millimete
REF.
Min. Max.
A 5.80 6.20 H 0.35 0.49
B 4.80 5.00 J 0.375 REF.
C 3.80 4.00 K 45°
D0° 8° L 1.35 1.75
E 0.40 0.90 M 0.10 0.25
F 0.19 0.25 N 0.25 REF.
G 1.27 TYP.
DS(ON)
SOP-8
B
A
9 m
C
J
REF.
Min. Max.
D
L
M
N
K
E
F
Package MPQ LeaderSize
SOP-8 2.5K 13’ inch
S
S
S
G
(T
MAXIMUM RATINGS
= 25°C unless otherwise specified)
A
Parameter Symbol Ratings Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current 1
Pulsed Drain Current 2 I
Continuous Source Current (Diode Conduction) 1 I
Total Power Dissipation 1
Operating Junction & Storage Temperature Range TJ, T
Thermal Resistance Ratings
Thermal Resistance Junction-Ambient (Max.) 1
Steady State
Notes:
1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
ID @ TA = 25°C 16.8 A
I
@ TA = 70°C 14.2 A
D
50 A
DM
2.3 A
S
PD @ TA = 25°C 3.1 W
P
@ TA = 70°C 2.2 W
D
-55 ~ 150 °C
STG
t ≦ 10 sec 40 °C / W
R
θJA
80 °C / W
D
D
D
D
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
31-Dec-2010 Rev. B Page 1 of 4
Page 2
SSG4874N
Elektronische Bauelemente
16.8 A, 30 V, R
N-Channel Mode Power MOSFET
DS(ON)
9 m
ELECTRICAL CHARACTERISTICS (T
A
Parameter Symbol Min. Typ. Max. Unit Teat Conditions
Gate Threshold Voltage V
Gate-Body Leakage Current I
Zero Gate Voltage Drain Current I
On-State Drain Current 1 I
Drain-Source On-Resistance 1 R
Forward Transconductance 1 g
Diode Forward Voltage VSD
Total Gate Charge Qg
Gate-Source Charge Qgs
Gate-Drain Charge Qgd
GS(th)
GSS
DSS
D(on)
DS(ON)
fs
= 25°C unless otherwise specified)
Static
1 1.5 3
- 1.2 100
- 10 1
- - 5
40 - -
- 7 9
- 9 12
- 40 -
- 0.7 -
Dynamic 2
- 15 40
- 3 10
- 5 20
V VDS= VGS, ID= 250μA
nA VDS= 0V, VGS= 20V
μA VDS= 24V, VGS= 0V
μA V
= 24V, VGS= 0V, TJ= 55°C
DS
A VDS= 5V, VGS= 10V
VGS= 10V, ID= 16.8A
mΩ
VGS= 4.5V, ID= 16.1A
S VDS= 15V, ID= 16.8A
V IS= 2.3A, VGS= 0V
= 16.8A
I
D
V
nC
DS
V
GS
= 15V
= 4.5V
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-On Delay Time T
iss
oss
rss
d(on)
Rise Time Tr
Turn-Off Delay Time T
d(off)
Fall Time Tf
Notes:
1 Pulse test：PW ≦ 300μs duty cycle ≦ 2%.
2 Guaranteed by design, not subject to production testing.
- 1642 4000
- 579 2000
pF
V
V
= 15V
DS
= 0V
GS
f= 1MHz
- 279 600
- 15 40
- 10 30
- 54 110
nS
V
DD
I
D
V
GEN
R
L
= 15V
= 1A
= 10V
= 6Ω
- 26 60
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
31-Dec-2010 Rev. B Page 2 of 4
Page 3
Elektronische Bauelemente
TYPICAL ELECTRICAL CHARACTERISTICS
SSG4874N
16.8 A, 30 V, R
N-Channel Mode Power MOSFET
DS(ON)
9 m
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
31-Dec-2010 Rev. B Page 3 of 4
Page 4
Elektronische Bauelemente
TYPICAL ELECTRICAL CHARACTERISTICS
SSG4874N
16.8 A, 30 V, R
N-Channel Mode Power MOSFET
DS(ON)
9 m
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
31-Dec-2010 Rev. B Page 4 of 4
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