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Elektronische Bauelemente
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low R
and to ensure minimal
DS(on)
power loss and heat dissipation. Typical
applications are DC-DC converters and power
management In portable and battery-powered
products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
FEATURES
Low R
extends battery life.
Low thermal impedance copper leadframe
SOIC-8 saves board space.
Fast switching speed.
High performance trench technology.
provides higher efficiency and
DS(on)
PACKAGE INFORMATION
Package MPQ LeaderSize
RoHS Compliant Product
SSG4841P
-9.0 A, -40 V, R
P-Ch Enhancement Mode Power MOSFET
H
REF.
Min. Max.
A 5.80 6.20 H 0.35 0.49
B 4.80 5.00 J 0.375 REF.
C 3.80 4.00 K 45°
D0° 8° L 1.35 1.75
E 0.40 0.90 M 0.10 0.25
F 0.19 0.25 N 0.25 REF.
G 1.27 TYP.
35 m
DS(ON)
SOP-8
B
L
A
G
Millimeter Millimete
REF.
C
K
J
F
Min. Max.
D
M
N
E
SOP-8 2.5K 13’ inch
S
S
S
GD
MAXIMUM RATINGS (T
= 25°C unless otherwise specified)
A
Parameter Symbol Ratings Unit
Drain-Source Voltage VDS -40 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current 1
Pulsed Drain Current 2 I
Continuous Source Current (Diode Conduction) 1 I
Total Power Dissipation 1
Operating Junction & Storage Temperature Range TJ, T
ID @ TA = 25°C -9.0 A
I
@ TA = 70°C -7.3 A
D
±50 A
DM
-2.1 A
S
PD @ TA = 25°C 3.1 W
P
@ TA = 70°C 2.6 W
D
-55 ~ 150 °C
STG
Thermal Resistance Ratings
t≦10 sec 50 °C / W
Thermal Resistance Junction-ambient (Max.)
1
Steady State
R
θJA
92 °C / W
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
D
D
D
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
31-Dec-2010 Rev. B Page 1 of 2
Page 2
SSG4841P
-9.0 A, -40 V, R
Elektronische Bauelemente
P-Ch Enhancement Mode Power MOSFET
DS(ON)
35 m
ELECTRICAL CHARACTERISTICS (T
A
Parameter Symbol Min. Typ. Max. Unit Teat Conditions
Gate Threshold Voltage V
Gate-Body Leakage Current I
Zero Gate Voltage Drain Current I
On-State Drain Current 1 I
Drain-Source On-Resistance 1 R
Forward Transconductance 1 g
Diode Forward Voltage VSD
Total Gate Charge Qg
Gate-Source Charge Qgs
Gate-Drain(“Miller”) Charge Qgd
GS(th)
GSS
DSS
D(on)
DS(ON)
fs
= 25°C unless otherwise specified)
Static
-1 - -
- - ±100
- - -1
- - -5
-50 - -
- - 35
- - 45
- 31 -
- -0.7 -
Dynamic 2
- 15.3 -
- 5.2 -
- 5.8 -
V VDS= VGS, ID= -250μA
nA VDS= 0V, VGS= ±25V
μA V
μA V
= -24V, VGS= 0V
DS
= -24V, VGS= 0V, TJ=55°C
DS
A VDS= -5V, VGS= -10V
V
= -10V, ID= -9.0A
mΩ
GS
V
= -4.5V, ID= -7.2A
GS
S VDS= -15V, ID= -9.0A
V IS= -2.1A, VGS= 0V
ID= -9.0A
nC
V
= -15V
DS
V
= -4.5V
GS
Turn-On Delay Time T
d(on)
Rise Time Tr
Turn-Off Delay Time T
d(off)
Fall Time Tf
Notes:
1. Pulse test：PW ≦ 300μs duty cycle ≦ 2%.
2. Guaranteed by design, not subject to production testing.
- 15 -
- 12 -
- 62 -
- 46 -
nS
= -15V, ID= -1A
V
DD
V
= -10V, RL= 15Ω
GEN
R
= 6Ω
G
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
31-Dec-2010 Rev. B Page 2 of 2
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