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Elektronische Bauelemente
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize high cell density process. Low R
DS(on)
assures minimal power loss and conserves
energy, making this device ideal for use in
power management circuitry. Typical
applications are PWMDC-DC converters, power
management in portable and battery-powered
products such as computers, printers, battery
charger, telecommunication power system, and
telephones power system.
FEATURES
Low R
extends battery life.
Miniature SOP-8 surface mount package
saves board space.
High power and current handling capability.
Extended V
applications.
provides higher efficiency and
DS(on)
range (±25) for battery pack
GS
PACKAGE INFORMATION
RoHS Compliant Product
SSG4835P
-9.5 A, -30 V, R
P-Ch Enhancement Mode Power MOSFET
H
G
Millimeter Millimete
REF.
Min. Max.
A 5.80 6.20 H 0.35 0.49
B 4.80 5.00 J 0.375 REF.
C 3.80 4.00 K 45°
D0° 8° L 1.35 1.75
E 0.40 0.90 M 0.10 0.25
F 0.19 0.25 N 0.25 REF.
G 1.27 TYP.
DS(ON)
SOP-8
B
A
19 m
C
J
REF.
Min. Max.
D
L
M
N
K
E
F
Package MPQ LeaderSize
SOP-8 2.5K 13’ inch
S
S
S
GD
MAXIMUM RATINGS (T
= 25°C unless otherwise specified)
A
Parameter Symbol Ratings Unit
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±25 V
Continuous Drain Current a
Pulsed Drain Current b I
Continuous Source Current (Diode Conduction) 1 I
Total Power Dissipation 1
Operating Junction & Storage Temperature Range TJ, T
ID @ TA = 25°C -9.5 A
I
@ TA = 70°C -8.3 A
D
±50 A
DM
-2.1 A
S
PD @ TA = 25°C 3.1 W
P
@ TA = 70°C 2.6 W
D
-55 ~ 150 °C
STG
Thermal Resistance Ratings
Thermal Resistance Junction-Case (Max.) 1 t ≦ 5 sec R
Thermal Resistance Junction-Ambient (Max.) 1 t ≦ 10 sec R
25 °C / W
θJC
50 °C / W
θJA
Notes
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
D
D
D
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
31-Dec-2010 Rev. B Page 1 of 4
Page 2
SSG4835P
-9.5 A, -30 V, R
Elektronische Bauelemente
P-Ch Enhancement Mode Power MOSFET
DS(ON)
19 m
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise specified)
A
Parameter
Gate Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current 1 I
Drain-Source On-Resistance 1 R
Forward Transconductance 1 g
Diode Forward Voltage VSD
Total Gate Charge Qg -
Gate-Source Charge Qgs -
Gate-Drain Charge Qgd -
Symbol Min. Typ. Max. Unit Teat Conditions
GS(th)
GSS
DSS
D(on)
DS(ON)
fs
-1 - -
-50 - -
Static
V VDS= VGS, ID= -250μA
- - ±100
- - -1
- - -5
nA VDS= 0V, VGS= ±25V
μA VDS= -24V, VGS= 0V
μA VDS= -24V, VGS= 0V, TJ=55°C
A VDS= -5V, VGS= -10V
- - 19
- - 30
mΩ
- - 29
- 31 -
- -0.7 -
S VDS= -15V, ID= -9.5A
V IS= -2.1A, VGS= 0V
Dynamic 2
15.3
5.2
5.8
-
-
nC
-
VGS= -10V, ID= -9.5A
VGS= -4.5V, ID= -7.5A
= -10V, ID= -9.5A, TJ=55°C
V
GS
ID= -9.5A
V
= -15V
DS
V
= -4.5V
GS
Turn-On Delay Time T
-
d(on)
Rise Time Tr -
Turn-Off Delay Time T
-
d(off)
Fall Time Tf -
Notes:
1. Pulse test：PW ≦ 300
2. Guaranteed by design, not subject to production testing.
μs duty cycle ≦ 2%.
Switching
15
12
62
46
-
= -15V, ID= -1A
V
nS
-
DD
V
= -10V, RL= 15Ω
GEN
R
= 6Ω
G
-
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
31-Dec-2010 Rev. B Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVES
SSG4835P
-9.5 A, -30 V, R
P-Ch Enhancement Mode Power MOSFET
DS(ON)
19 m
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
31-Dec-2010 Rev. B Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVES
SSG4835P
P-Ch Enhancement Mode Power MOSFET
-9.5 A, -30 V, R
DS(ON)
19 m
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
31-Dec-2010 Rev. B Page 4 of 4
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