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Elektronische Bauelemente
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low R
and to ensure minimal
DS(on)
power loss and heat dissipation. Typical
applications are DC-DC converters and power
management in portable and battery-powered
products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
FEATURES
Low R
extends battery life.
Low thermal impedance copper leadframe
SOP-8 saves board space.
Fast switching speed.
High performance trench technology.
provides higher efficiency and
DS(on)
PACKAGE INFORMATION
-11.5 A, 30 V, R
P-Channel Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SSG4825PE
DS(ON)
SOP-8
B
A
H
G
Millimeter Millimete
REF.
Min. Max.
A 5.80 6.20 H 0.35 0.49
B 4.80 5.00 J 0.375 REF.
C 3.80 4.00 K 45°
D0° 8° L 1.35 1.75
E 0.40 0.90 M 0.10 0.25
F 0.19 0.25 N 0.25 REF.
G 1.27 TYP.
REF.
13 m
L
C
K
J
F
Min. Max.
D
M
N
E
Package MPQ LeaderSize
SOP-8 2.5K 13’ inch
ESD
Protection
Diode
3KV
S
S
S
G
(T
MAXIMUM RATINGS
= 25°C unless otherwise specified)
A
Parameter Symbol Ratings Unit
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±25 V
Continuous Drain Current 1
Pulsed Drain Current 2 I
Continuous Source Current (Diode Conduction) 1 I
Total Power Dissipation 1
Operating Junction & Storage Temperature Range TJ, T
ID @ TA = 25°C -11.5 A
I
@ TA = 70°C -9.3 A
D
±50 A
DM
-2.1 A
S
PD @ TA = 25°C 3.1 W
P
@ TA = 70°C 2.3 W
D
-55 ~ 150 °C
STG
Thermal Resistance Ratings
Thermal Resistance Junction-Case (Max.) 1 t ≦ 5 sec R
Thermal Resistance Junction-Ambient (Max.) 1 t ≦ 5 sec R
25 °C / W
θJC
50 °C / W
θJA
Notes:
1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
D
D
D
D
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
31-Dec-2010 Rev. B Page 1 of 2
Page 2
SSG4825PE
Elektronische Bauelemente
-11.5 A, 30 V, R
P-Channel Mode Power MOSFET
DS(ON)
13 m
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise specified)
A
Parameter Symbol Min. Typ. Max. Unit Teat Conditions
Static
Drain-Source Breakdown Voltage V
Gate Threshold Voltage V
Gate-Body Leakage Current I
Zero Gate Voltage Drain Current I
On-State Drain Current 1 I
Drain-Source On-Resistance 1 R
Forward Transconductance 1 g
Diode Forward Voltage VSD - -0.8 - V IS= 2.5A, VGS= 0V
Total Gate Charge Qg - 25 -
Gate-Source Charge Qgs - 11 -
Gate-Drain Charge Qgd - 17 -
-30 - - V VGS= 0V, ID= -250μA
(BR)DSS
-1 - - V VDS= VGS, ID= -250μA
GS(th)
- -
GSS
±1
VDS= 0V, VGS= ±25V
μA
- - -1 μA VDS= -24V, VGS= 0V
DSS
-50 - - A VDS= -5V, VGS= -10V
D(on)
- - -5 μA V
= -24V, VGS= 0V, TJ= 55°C
DS
- - 13 VGS= -10V, ID= -11.5A
DS(ON)
- - 19
- 29 - S VDS= -15V, ID= -11.5A
fs
mΩ
V
= -4.5V, ID= -9.3A
GS
Dynamic 2
ID= -11.5A
nC
V
= -15V
DS
V
= -5V
GS
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-On Delay Time T
- 2300 -
iss
- 600 -
oss
- 300 -
rss
- 15 -
d(on)
Rise Time Tr - 13 -
Turn-Off Delay Time T
- 100 -
d(off)
Fall Time Tf - 54 -
Notes:
1 Pulse test：PW ≦ 300
2 Guaranteed by design, not subject to production testing.
μs duty cycle ≦ 2%.
pF
nS
V
= -15V
DS
V
= 0V
GS
f= 1MHz
= -15V
V
DD
I
= -1A
D
V
= -10V
GEN
R
= 6Ω
L
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
31-Dec-2010 Rev. B Page 2 of 2
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