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Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSG4801 uses advanced trench technology to
provide excellent on-resistance, low gate charge and
operation with gate voltages as low as 2.5V. The device is
suitable for use as a load switch or in PWM applications.
It may be used in a common drain arrangement to from a
bidirectional blocking switch.
FEATURES
Simple Drive Requirement
Lower On-resistance
Low Gate Charge
MARKING
4801SS
= Date Code
PACKAGE INFORMATION
SSG4801
-5 A, -30 V, R
Dual-P Enhancement Mode Power MOSFET
H
REF.
A 5.80 6.20 H 0.35 0.49
B 4.80 5.00 J 0.375 REF.
C 3.80 4.00 K 45°
D0° 8° L 1.35 1.75
E 0.40 0.90 M 0.10 0.25
F 0.19 0.25 N 0.25 REF.
G 1.27 TYP.
50 m
DS(ON)
SOP-8
B
D
L
M
A
G
Millimeter
Min. Max. Min. Max.
REF.
C
J
K
F
Millimete
N
E
Package MPQ LeaderSize
SOP-8 2.5K 13’ inch
S1
G1
S2
G2
MAXIMUM RATINGS (T
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±12 V
Continuous Drain Current 1
Pulsed Drain Current 2 I
Total Power Dissipation 1 T
Linear Derating Factor 0.016 W / °C
Operating Junction & Storage Temperature Range TJ, T
Thermal Resistance Junction-ambient 1 (Max.) R
Notes：
1. Surface Mounted on FR4 Board, t 10sec.≦
2. Pulse width 300 μs, duty cycle 2≦≦%
= 25°C unless otherwise specified)
A
Parameter Symbol Ratings Unit
= 25°C
T
A
TA = 70°C -4.2
= 25°C PD 2 W
A
I
D
-30 A
DM
-55 ~ 150 °C
STG
-5
Thermal Resistance Ratings
62.5 °C / W
θJA
D1
D1
D2
D2
A
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
19-Jan-2011 Rev. A Page 1 of 4
Page 2
SSG4801
-5 A, -30 V, R
Elektronische Bauelemente
Dual-P Enhancement Mode Power MOSFET
DS(ON)
50 m
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise specified)
J
Parameter Symbol Min Typ Max Unit Test condition
Drain-Source Breakdown Voltage BV
Gate Threshold Voltage V
Forward Transconductance 2 g
Gate-Source Leakage Current I
T
=25°C
Drain-Source Leakage
Current
J
TJ=55°C
Static Drain-Source On-Resistance 2 R
Total Gate Charge 2 Q
DSS
GS(th)
fs
GSS
I
DSS
DS(ON)
g
Gate-Drain (“Miller”) Change Qgd
Turn-on Delay Time 2 T
d(ON)
Rise Time Tr
Turn-off Delay Time T
d(OFF)
Fall Time Tf
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
ISS
OSS
RSS
-30 - -
-0.5 - -1.0
Source-Drain Diode
V VGS=0V, ID = -250uA
V VDS=VGS, ID = -250uA
- 11 -
- - ±100
- - -1
- - -5
S VDS= -5V, ID = -5A
nA VGS= ±12V
μA V
μA VDS= -24V, VGS=0V
- - 50
- - 65
mΩ
- - 120
- 9.5 -
- 2.0 -
nC V
- 3.1 -
- 12 -
- 4 -
- 37 -
nS
- 12 -
- 952 -
- 103 -
pF
- 77 -
= -24V, VGS=0V
DS
V
= -10V, ID= -5A
GS
= -4.5V, ID= -4A
V
GS
= -2.5V, ID= -1A
V
GS
= -15V, ID = -5A, VGS= -4.5VGate-Source Chagre Qgs
DS
V
= -15V, VGS= -10V
DS
R
=3Ω, RG=6Ω
L
VDS= -15V
V
=0V
GS
f=1.0MHz
Forward On Voltage 2 V
Notes：
1 Surface Mounted on FR4 Board, t 10sec.≦
2. Pulse width 300 μs, duty cycle 2≦≦%
SD
- - -1.2
V IS= -1.7A, VGS=0V
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
19-Jan-2011 Rev. A Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVES
SSG4801
-5 A, -30 V, R
Dual-P Enhancement Mode Power MOSFET
DS(ON)
50 m
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
19-Jan-2011 Rev. A Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVES
SSG4801
-5 A, -30 V, R
Dual-P Enhancement Mode Power MOSFET
DS(ON)
50 m
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
19-Jan-2011 Rev. A Page 4 of 4
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