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Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to provide low
R
and to ensure minimal power loss and heat
DS(on)
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,.
printers, PCMCIA cards, cellular and cordless
telephones
FEATURES
Low R
battery life.
Low thermal impedance copper leadframe SOP-8
saves board space
Fast switching speed
High performance trench technology
provides higher efficiency and extends
DS(on)
PACKAGE INFORMATION
Package MPQ LeaderSize
SSG4543C
N-Ch: 6.5 A, 40 V, R
P-Ch: -7.6 A, -40 V, R
N & P-Ch Enhancement Mode Power MOSFET
SOP-8
H
G
Millimeter Millimete
REF.
Min. Max.
A 5.8 6.20 H 0.35 0.51
B 4.80 5.00 J 0.375 REF.
C 3.80 4.00 K 45°
D0° 8° L 1.35 1.75
E 0.50 0.93 M 0.10 0.25
F 0.19 0.25 N 0.25 REF.
G 1.27 TYP.
DS(ON)
DS(ON)
B
A
32 m
30 m
C
J
REF.
Min. Max.
K
F
D
L
M
N
E
SOP-8 2.5K 13’ inch
MAXIMUM RATINGS (T
= 25°C unless otherwise specified)
A
PARAMETER SYMBOL N-CH P-CH Unit
Drain-Source Voltage VDS 40 -40 V
Gate-Source Voltage VGS 20 -20 V
Continuous Drain Current 1
Pulsed Drain Current 2 I
Continuous Source Current (Diode Conduction) 1 I
Total Power Dissipation 1
Operating Junction & Storage Temperature Range TJ, T
ID @ TA = 25°C 6.5 -7.6 A
I
@ TA = 70°C 5.5 -6.3 A
D
±50 ±50 A
DM
2.3 -2.1 A
S
PD @ TA = 25°C 2.1 2.1 W
P
@ TA = 70°C 1.3 1.3 W
D
-55 ~ 150 °C
STG
Thermal Resistance Ratings
Maximum Junction-to-Ambient
1
t≦ 10 sec 62.5 °C / W
Steady State
R
θJA
110 °C / W
Notes
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
27-Dec-2010 Rev. C Page 1 of 6
Page 2
SSG4543C
N-Ch: 6.5 A, 40 V, R
Elektronische Bauelemente
N & P-Ch Enhancement Mode Power MOSFET
P-Ch: -7.6 A, -40 V, R
DS(ON)
DS(ON)
32 m
30 m
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise specified)
A
Parameter Symbol Ch Min. Typ. Max. Unit Teat Conditions
Static
Gate Threshold Voltage V
Gate-Body Leakage Current I
Zero Gate Voltage Drain Current I
On-State Drain Current 1 I
Drain-Source On-Resistance 1 R
GS(th)
GSS
DSS
D(on)
DS(ON)
Forward Transconductance 1 g
N 1 - - VDS= VGS, ID= 250μA
P -1 - -
N - - ±100 VDS= 0V, VGS= 20V
P - - ±100
N - - 1 VDS= 32V, VGS= 0V
P - - -1
N 25 - - VDS= 5V, VGS= 10V
P -50 - -
N
P
N - 40 - VDS= 15V, ID= 6.5A
fs
P - 31 -
- - 32 VGS= 10V, ID= 6.5A
- - 42 VGS= 4.5V, ID= 5.7A
- - 30 VGS= -10V, ID= -7.6A
- - 40
V
nA
μA
A
= VGS, ID= -250μA
V
DS
VDS= 0V, VGS= -20V
VDS= -32V, VGS= 0V
VDS= -5V, VGS= -10V
mΩ
VGS= -4.5V, ID= -6.2A
S
VDS= -15V, ID= -7.6A
Dynamic 2
Total Gate Charge Qg
Gate-Source Charge Qgs
Gate-Drain Charge Qgd
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-On Delay Time T
OSS
RSS
d(on)
Rise Time Tr
Turn-Off Delay Time T
d(off)
Fall Time Tf
Notes
1. Pulse test：PW ≦ 300
2. Guaranteed by design, not subject to production testing.
μs duty cycle ≦ 2%.
N - 13 -
P - 14 -
N - 3.3 -
P - 5.8 -
N - 4.5 -
P - 12 -
N - 440 -
ISS
P - 1800 -
N - 80 -
P - 280 -
N - 130 -
P - 150 -
N - 20 -
P - 15 -
N - 9 -
P - 16 -
N - 70 -
P - 62 -
N - 20 -
P - 46 -
N-Channel
I
= 6.5A, VDS= 15V, VGS= 4.5V
D
nC
P-Channel
I
= -7.6A, VDS= -15V, VGS= -4.5V
D
N-Channel
V
= 15V, VGS= 0V, f= 1MHz
pF
DS
P-Channel
V
= -15V, VGS= 0V, f= 1MHz
DS
N-Channel
VDD= 15V, VGS= 10V
= 1A, R
I
D
nS
P-Channel
V
= -15V, VGS= -10V
DD
I
= -1A, R
D
GEN
GEN
= 25Ω
= 15Ω
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
27-Dec-2010 Rev. C Page 2 of 6
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVES (N-Channel)
SSG4543C
N-Ch: 6.5 A, 40 V, R
P-Ch: -7.6 A, -40 V, R
N & P-Ch Enhancement Mode Power MOSFET
DS(ON)
DS(ON)
32 m
30 m
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
27-Dec-2010 Rev. C Page 3 of 6
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVES
SSG4543C
N-Ch: 6.5 A, 40 V, R
P-Ch: -7.6 A, -40 V, R
N & P-Ch Enhancement Mode Power MOSFET
DS(ON)
DS(ON)
32 m
30 m
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
27-Dec-2010 Rev. C Page 4 of 6
Page 5
Elektronische Bauelemente
CHARACTERISTIC CURVES (P-Channel)
SSG4543C
N-Ch: 6.5 A, 40 V, R
P-Ch: -7.6 A, -40 V, R
N & P-Ch Enhancement Mode Power MOSFET
DS(ON)
DS(ON)
32 m
30 m
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
27-Dec-2010 Rev. C Page 5 of 6
Page 6
Elektronische Bauelemente
CHARACTERISTIC CURVES
SSG4543C
N-Ch: 6.5 A, 40 V, R
P-Ch: -7.6 A, -40 V, R
N & P-Ch Enhancement Mode Power MOSFET
DS(ON)
DS(ON)
32 m
30 m
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
27-Dec-2010 Rev. C Page 6 of 6
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