Datasheet ssg4542c Datasheet

r

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low R

and to ensure minimal power loss and heat

DS(on)

dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

FEATURES

 Low R

battery life.

 Low thermal impedance copper leadframe SOP-8

saves board space

 Fast switching speed  High performance trench technology

provides higher efficiency and extends

DS(on)

PACKAGE INFORMATION

Package MPQ LeaderSize

SOP-8 2.5K 13’ inch

SSG4542C

N-Ch: 8.3 A, 40 V, R

P-Ch: -7.6 A, -40 V, R

N & P-Ch Enhancement Mode Power MOSFET

SOP-8

H

G

Millimeter Millimete

REF.

Min. Max.

A 5.8 6.20 H 0.35 0.51 B 4.80 5.00 J 0.375 REF. C 3.80 4.00 K 45° D0° 8° L 1.35 1.75 E 0.50 0.93 M 0.10 0.25 F 0.19 0.25 N 0.25 REF. G 1.27 TYP.

DS(ON)

B

A

14 m

28 m

C

J

REF.

Min. Max.

K

F

D

L

M

N

E

MAXIMUM RATINGS (T

= 25°C unless otherwise specified)

A

PARAMETER SYMBOL N-CH P-CH Unit

Drain-Source Voltage VDS 40 -40 V

Gate-Source Voltage VGS 20 -20 V

Continuous Drain Current 1

Pulsed Drain Current 2 I

Continuous Source Current (Diode Conduction) 1 I

Total Power Dissipation 1

Operating Junction & Storage Temperature Range TJ, T

ID @ TA = 25°C 8.3 -7.6 A

I

@ TA = 70°C 6.8 -6.3 A

D

±50 ±50 A

DM

2.3 -2.1 A

S

PD @ TA = 25°C 2.1 2.1 W

P

@ TA = 70°C 1.3 1.3 W

D

-55 ~ 150 °C

STG

Thermal Resistance Ratings

Maximum Junction-to-Ambient

1

t≦ 10 sec 62.5 °C / W

Steady State

R

θJA

110 °C / W

Notes:

1. Surface Mounted on 1” x 1” FR4 Board.

2. Pulse width limited by maximum junction temperature.

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

27-Dec-2010 Rev. B Page 1 of 6

SSG4542C

N-Ch: 8.3 A, 40 V, R

Elektronische Bauelemente

N & P-Ch Enhancement Mode Power MOSFET

P-Ch: -7.6 A, -40 V, R

DS(ON)

14 m

28 m

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise specified)

A

Parameter Symbol Ch Min. Typ. Max. Unit Teat Conditions

Static

Gate Threshold Voltage V

Gate-Body Leakage Current I

Zero Gate Voltage Drain Current I

On-State Drain Current 1 I

Drain-Source On-Resistance 1 R

GS(th)

GSS

DSS

D(on)

DS(ON)

Forward Transconductance 1 g

N 1 1.5 3 VDS= VGS, ID= 250μA

P -1 -1.4 -3

N - 6 ±100 VDS= 0V, VGS= 20V

P - 7 ±100

N - 2nA 1 VDS= 32V, VGS= 0V

P - 12nA -1

N 25 - - VDS= 5V, VGS= 10V

P -50 - -

N

P

N - 40 - VDS= 15V, ID= 8.3A

fs

P - 31 -

- 14 22 VGS= 10V, ID= 8.3A

- 17 27 V

- 28 30 VGS= -10V, ID= -7.6A

- 35 40

V

= VGS, ID= -250μA

DS

nA

V

= 0V, VGS= -20V

DS

μA

V

= -32V, VGS= 0V

DS

A

V

= -5V, VGS= -10V

DS

= 4.5V, ID= 7.3A

mΩ

GS

VGS= -4.5V, ID= -6.2A

S

V

= -15V, ID= -7.6A

DS

Dynamic 2

Total Gate Charge Qg

Gate-Source Charge Qgs

Gate-Drain Charge Qgd

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Turn-On Delay Time T

d(on)

Rise Time Tr

Turn-Off Delay Time T

d(off)

Fall Time Tf

Notes:

1. Pulse test：PW ≦ 300

2. Guaranteed by design, not subject to production testing.

μs duty cycle ≦ 2%.

N - 13 30

P - 14 30

N - 3.3 7

P - 5.8 12

N - 4.5 10

P - 12 30

N - 1317 3000

iss

P - 1583 4000

N - 272 600

oss

P - 278 600

N - 169 400

rss

P - 183 400

N - 20 40

P - 15 30

N - 9 20

P - 16 40

N - 70 200

P - 62 200

N - 20 40

P - 46 100

N-Channel I

= 8.3A, VDS= 15V, VGS= 4.5V

D

nC

P-Channel I

= -7.6A, VDS= -15V, VGS= -4.5V

D

N-Channel f= 1MHz, V

pF

P-Channel f= 1MHz, V

N-Channel VDD= 15V, VGS= 10V I

= 1A, R

D

nS

P-Channel V

= -15V, VGS= -10V

DD

= -1A, R

I

D

= 15V, VGS= 0V

DS

= -15V, VGS= 0V

DS

= 25Ω

GEN

= 15Ω

GEN

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

27-Dec-2010 Rev. B Page 2 of 6

Elektronische Bauelemente

CHARACTERISTIC CURVES (N-Channel)

SSG4542C

N-Ch: 8.3 A, 40 V, R

P-Ch: -7.6 A, -40 V, R

N & P-Ch Enhancement Mode Power MOSFET

DS(ON)

14 m

28 m

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

27-Dec-2010 Rev. B Page 3 of 6

Elektronische Bauelemente

CHARACTERISTIC CURVES

SSG4542C

N-Ch: 8.3 A, 40 V, R

P-Ch: -7.6 A, -40 V, R

N & P-Ch Enhancement Mode Power MOSFET

DS(ON)

14 m

28 m

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

27-Dec-2010 Rev. B Page 4 of 6

Elektronische Bauelemente

CHARACTERISTIC CURVES (P-Channel)

SSG4542C

N-Ch: 8.3 A, 40 V, R

P-Ch: -7.6 A, -40 V, R

N & P-Ch Enhancement Mode Power MOSFET

DS(ON)

14 m

28 m

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

27-Dec-2010 Rev. B Page 5 of 6

Elektronische Bauelemente

CHARACTERISTIC CURVES

SSG4542C

N-Ch: 8.3 A, 40 V, R

P-Ch: -7.6 A, -40 V, R

N & P-Ch Enhancement Mode Power MOSFET

DS(ON)

14 m

28 m

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

27-Dec-2010 Rev. B Page 6 of 6

Datasheet ssg4542c Datasheet [en, de]