Page 1
A
H
B
M
D
C
J
K
F
L
E
N
G
Millimeter
Millimeter
Min. Max. Min. Max.
A 5.8 6.20 H 0.35 0.51
B 4.80 5.00 J 0.375 REF.
C 3
.80 4.00 K 45°
D 0° 8° L 1.35 1.75
E 0.50 0.93 M 0.10 0.25
F 0.19 0.25 N 0.25 REF.
G 1.27 TYP.
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to provide low
R
and to ensure minimal power loss and heat
DS(on)
dissipation.
FEATURES
Low R
provides higher efficiency and
DS(on)
extends battery life.
Low thermal impedance copper leadframe
SOP-8 saves board space
Fast switching speed
High performance trench technology
APPLICATION
DC-DC converters and power management in
portable and battery-powered products such as computers,.
printers, PCMCIA cards, cellular and cordless telephones
SSG4536C
N-Ch: 7.1A, 30V, R
P-Ch: -6A, -30V, R
N & P-Ch Enhancement Mode Power MOSFET
SOP-8
REF.
Top View
DS(ON)
DS(ON)
REF.
28 mΩ
39 mΩ
ΩΩΩ
ΩΩΩ
PACKAGE INFORMATION
Package MPQ Leader Size
SOP-8 2.5K 13 inch
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol
Drain-Source Voltage VDS 30 -30 V
Gate-Source Voltage VGS ±20 ±20 V
Continuous Drain Current 1
Pulsed Drain Current 2 IDM 20 -20 A
Continuous Source Current (Diode Conduction) 1 IS 1.3 -1.3 A
Total Power Dissipation 1
(TA=25°C unless otherwise specified)
Rating
N-CH P-CH
TA = 25°C
ID
TA = 70°C 5.8 -4.9 A
TA = 25°C
PD
TA = 70°C 1.3 W
7.1 -6 A
2.1 W
Unit
Operating Junction & Storage Temperature Range TJ, T
-55 ~ 150 °C
STG
Thermal Resistance Ratings
Maximum Junction-to-Ambient
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
12-Sep-2012 Rev. A Page 1 of 2
t≦10 sec
1
Steady State 110 °C / W
R
θJA
62.5 °C / W
Page 2
SSG4536C
N-Ch: 7.1A, 30V, R
Elektronische Bauelemente
N & P-Ch Enhancement Mode Power MOSFET
P-Ch: -6A, -30V, R
DS(ON)
DS(ON)
28 mΩ
39 mΩ
ΩΩΩ
ΩΩΩ
ELECTRICAL CHARACTERISTICS
Parameter
Gate Threshold Voltage V
Gate-Body Leakage Current I
Zero Gate Voltage Drain Current I
On-State Drain Current 1 I
Drain-Source On-Resistance 1 R
Forward Transconductance 1 gfs
Symbol
GS(th)
GSS
DSS
D(on)
DS(ON)
(TA=25°C unless otherwise specified)
Ch
Min. Typ. Max. Unit Teat Conditions
Static
N
P
N
P
N
P
N
P
N
P
N
P
1 - -
-1 - - VDS=VGS, ID= -250µA
- - ±100
- - ±100 VDS=0, VGS= -20V
- - 1
- - -1 VDS= -24V, VGS=0
20 - -
-20 - - VDS= -5V, VGS= -10V
- - 28
- - 42 VGS=4.5V, ID=5.8A
- - 39 VGS= -10V, ID= -6A
- - 59 VGS= -4.5V, ID= -4.9A
- 25 -
- 10 - VDS= -15V, ID= -5.2A
Dynamic
2
VDS=VGS, ID=250µA
V
VDS=0, VGS=20V
nA
VDS=24V, VGS=0
µA
VDS=5V, VGS=10V
A
VGS=10V, ID=7.1A
mΩ
VDS=15V, ID=6.9A
S
Total Gate Charge Qg
Gate-Source Charge Qgs
Gate-Drain(“Miller”) Charge Qgd
Turn-On Delay Time T
Rise Time Tr
Turn-Off Delay Time T
Fall Time Tf
Notes
1. Pulse test：PW ≦ 300µs duty cycle ≦ 2%.
2. Guaranteed by design, not subject to production testing.
d(on)
d(off)
N
P
N
P
N
P
N
P
N
P
N
P
N
P
- 4 -
- 10 -
- 1.1 -
- 2.2 -
- 1.4 -
- 1.7 -
- 8 -
- 10 -
- 5 -
- 2.8 -
- 23 -
- 53.6 -
- 3 -
- 46 -
N-Channel
ID=6.9A, VDS=15V, VGS=10V
nC
P-Channel
ID= -5.2A, VDS= -15V, VGS= -10V
N-Channel
VDD=15V, VGS=10V
ID=1A, R
nS
P-Channel
VDD= -15V, VGS= -10V
ID= -1A, R
GEN
GEN
=6Ω
= 6Ω
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
12-Sep-2012 Rev. A Page 2 of 2
Loading...