Page 1
DS(ON)
A
H
B
M
D
C
J
K
F
L
E
N
G
Millimeter
Millimeter
Min. Max. Min. Max.
A 5.80 6.20 H 0.35 0.49
B 4.80 5.00 J 0.375 REF.
C 3.80 4.00 K 45°
D 0° 8° L 1.35 1.75
E 0.40 0.90 M 0.10 0.25
F 0.19 0.25 N 0.25 REF.
G 1.27 TYP.
S1
G1
S2
D1
D1
D2
D2 G2
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low R
DS(on)
and to ensure minimal power loss and heat dissipation.
FEATURES
Low R
provides higher efficiency and
DS(on)
extends battery life.
Low thermal impedance copper leadframe
SOP-8 saves board space.
Fast Switch Speed.
High performance trench technology.
APPLICATION
DC-DC converters and power management in portable
and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
SSG4512CE
N & P-Ch Enhancement Mode Power MOSFET
N-Ch: 6.9 A, 30 V, R
P-Ch: -5.2 A, -30 V, R
SOP-8
REF.
DS(ON)
REF.
31 mΩ
ΩΩΩ
52 mΩΩΩΩ
PACKAGE INFORMATION
Package MPQ Leader Size
SOP-8 2.5K 13 inch
MAXIMUM RATINGS
Drain-Source Voltage VDS 30 -30 V
Gate-Source Voltage VGS ±20 ±20 V
Continuous Drain Current1
Pulsed Drain Current2 IDM 20 -20 A
Continuous Source Current (Diode Conduction) 1 IS 1.3 -1.3 A
Total Power Dissipation1
Operating Junction and Storage Temperature Range
(TA=25°C unless otherwise specified)
Parameter Symbol
TA=25°C
TA=70°C 5.4 -6.8 A
TA=25°C
TA=70°C 1.3 1.3 W
PD
TJ, T
ID
STG
Thermal Resistance Ratings
Ratings
N-Ch P-Ch
6.9 -5.2 A
2.1 2.1 W
-55~150 °C
Unit
Maximum Junction-ambient 1 t<=5 sec R
Maximum Junction-Case 1 t<=5 sec R
Notes：
1. Surface Mounted on 1” x 1” FR4 Board.
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
26-Dec-2011 Rev. A Page 1 of 7
2. Pulse width limited by maximum junction temperature
60 °C / W
θJA
40 °C / W
θJC
Page 2
DS(ON)
SSG4512CE
N & P-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
P-Ch: -5.2 A, -30 V, R
N-Ch: 6.9 A, 30 V, R
DS(ON)
31 mΩ
ΩΩΩ
52 mΩΩΩΩ
N-CHANNEL ELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise specified)
Parameter Symbol Min. Typ. Max. Unit
Static
Gate Threshold Voltage V
Gate-Source Leakage Current I
Drain-Source Leakage Current I
On-State Drain Current1 I
Static Drain-Source On-Resistance1 R
Forward Transconductance1 g
GS(th)
GSS
DSS
D(ON)
DS(ON)
fs
Total Gate Charge Qg - 4.0
Gate-Source Charge Qgs - 1.1 Gate-Drain (“Miller”) Change Qgd - 1.4 Turn-on Delay Time T
d(on)
Rise Time Tr - 5 Turn-off Delay Time T
d(off)
Fall Time Tf -
Notes:
1. Pulse test: PW ≦ 300us duty cycle ≦ 2%.
2. Guaranteed by design, not subject to production testing.
1 - - V VDS=VGS, ID=250µA
- - ±100 nA VGS= 8V, VDS=0
- - 1 µA VDS=24V, VGS=0
20 - - A VDS=5V, VGS=10V
- - 31
- - 40 VGS=4.5V, ID=6A
- 25 - S VDS=15V, ID=6.9A
Dynamic
- 8 -
- 23 -
Test Conditions
VGS=10V, ID=6.9A
mΩ
ID=6.9A
nC
VDS=15V
VGS=10V
VDD=15V
VGS=10V
nS
ID=1A
R
=6Ω
3
-
GEN
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26-Dec-2011 Rev. A Page 2 of 7
Page 3
DS(ON)
SSG4512CE
N & P-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
P-Ch: -5.2 A, -30 V, R
N-Ch: 6.9 A, 30 V, R
DS(ON)
31 mΩ
ΩΩΩ
52 mΩΩΩΩ
P-CHANNEL ELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise specified)
Parameter Symbol Min. Typ. Max. Unit
Static
Gate Threshold Voltage V
Gate-Source Leakage Current I
Drain-Source Leakage Current I
On-State Drain Current1 I
Static Drain-Source On-Resistance1 R
Forward Transconductance1 g
Total Gate Charge Qg - 10
Gate-Source Charge Qgs - 2.2 Gate-Drain (“Miller”) Change Qgd - 1.7 Turn-on Delay Time T
Rise Time Tr - 2.8 Turn-off Delay Time T
Fall Time Tf -
Notes:
1. Pulse test: PW ≦ 300us duty cycle ≦ 2%.
2. Guaranteed by design, not subject to production testing.
GS(th)
GSS
DSS
D(ON)
DS(ON)
fs
d(on)
d(off)
-1 - - V VDS=VGS, ID= -250µA
- - ±100 nA VGS= -8V, VDS=0
- - -1 µA VDS= -24V, VGS=0
-20 - - A VDS= -5V, VGS= -10V
- - 52
- - 80 VGS= -4.5V, ID= -4.2A
- 10 - S VDS= -15V, ID= -5.2A
Dynamic
- 10 -
- 53.6
46
Test Conditions
VGS= -10V, ID= -5.2A
mΩ
ID= -5.2A
nC
VDS= -15V
VGS= -10V
VDD= -15V
VGS= -10V
nS
-
-
ID= -1A
R
=6Ω
GEN
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26-Dec-2011 Rev. A Page 3 of 7
Page 4
DS(ON)
Elektronische Bauelemente
CHARACTERISTIC CURVE (N-Ch)
SSG4512CE
N & P-Ch Enhancement Mode Power MOSFET
N-Ch: 6.9 A, 30 V, R
P-Ch: -5.2 A, -30 V, R
DS(ON)
31 mΩ
52 mΩΩΩΩ
ΩΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
26-Dec-2011 Rev. A Page 4 of 7
Page 5
DS(ON)
Elektronische Bauelemente
CHARACTERISTIC CURVE (N-Ch)
SSG4512CE
N & P-Ch Enhancement Mode Power MOSFET
N-Ch: 6.9 A, 30 V, R
P-Ch: -5.2 A, -30 V, R
DS(ON)
31 mΩ
52 mΩΩΩΩ
ΩΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
26-Dec-2011 Rev. A Page 5 of 7
Page 6
DS(ON)
Elektronische Bauelemente
CHARACTERISTIC CURVE (P-Ch)
SSG4512CE
N & P-Ch Enhancement Mode Power MOSFET
N-Ch: 6.9 A, 30 V, R
P-Ch: -5.2 A, -30 V, R
DS(ON)
31 mΩ
52 mΩΩΩΩ
ΩΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
26-Dec-2011 Rev. A Page 6 of 7
Page 7
DS(ON)
Elektronische Bauelemente
CHARACTERISTIC CURVE (P-Ch)
SSG4512CE
N & P-Ch Enhancement Mode Power MOSFET
N-Ch: 6.9 A, 30 V, R
P-Ch: -5.2 A, -30 V, R
DS(ON)
31 mΩ
ΩΩΩ
52 mΩΩΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
26-Dec-2011 Rev. A Page 7 of 7
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