Page 1
DS(ON)
A
H
B
M
D
C
J
K
F
L
E
N
G
Millimeter
M
illimeter
Min. Max. Min. Max.
A 5.80 6.20 H 0.35 0.49
B 4.80 5.00 J 0.375 REF.
C 3
.80 4.00 K 45°
D 0° 8° L 1.35 1.75
E 0.40 0.90 M 0.10 0.25
F 0.19 0.25 N 0.25 REF.
G 1.27 TYP.
G
S
D
D
D
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSG4510 provide the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all
commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
FEATURES
Simple Drive Requirement
Lower On-resistance
Fast Switching Performance
MARKING
SSG4510
N & P-Ch Enhancement Mode Power MOSFET
N-Ch: 2.5 A, 100 V, R
P-Ch: -2.5A, -100 V, R
SOP-8
REF.
DS(ON)
REF.
112 mΩ
ΩΩΩ
180 mΩΩΩΩ
4510SS
= Date Code
PACKAGE INFORMATION
Package MPQ Leader Size
SOP-8 2.5K 13 inch
S
G
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol
Drain-Source Voltage VDS 100 -100 V
Gate-Source Voltage VGS ±20 ±20 V
Continuous Drain Current3
TA=25°C
ID
TA=70°C 2 -2 A
Ratings
N-Ch P-Ch
2.5 -2.5 A
D
Unit
Pulsed Drain Current1 IDM 10 -10 A
Total Power Dissipation TA=25°C PD 2 W
Operating Junction and Storage Temperature Range
TJ, T
-55~150 °C
STG
Thermal Data
Thermal Resistance Junction-ambient
3
R
62.5 °C / W
θJA
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
18-Jun-2012 Rev. A Page 1 of 7
Page 2
DS(ON)
SSG4510
N & P-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
P-Ch: -2.5A, -100 V, R
N-Ch: 2.5 A, 100 V, R
DS(ON)
112 mΩ
ΩΩΩ
180 mΩΩΩΩ
N-CHANNEL ELECTRICAL CHARACTERISTICS
(TJ=25°C unless otherwise specified)
Parameter Symbol Min. Typ. Max. Unit
Drain-Source Breakdown Voltage BV
Gate Threshold Voltage V
Forward Transconductance gfs - 20 - S VDS=5V, ID=2A
Gate-Source Leakage Current I
TJ=25°C
Drain-Source Leakage Current
TJ=55°C
Static Drain-Source On-Resistance2 R
Total Gate Charge2 Qg - 26.2
Gate-Source Charge Qgs - 3.8 Gate-Drain (“Miller”) Change Qgd - 4.8 Turn-on Delay Time2 T
Rise Time Tr - 7.6 Turn-off Delay Time T
Fall Time Tf -
DSS
GS(th)
GSS
I
DSS
DS(ON)
d(on)
d(off)
100 - - V VGS=0, ID=250µA
1.0 - 2.5 V VDS=VGS, ID=250µA
- - ±100 nA VGS = ±20V
- - 1
- - 5
- - 112
- - 120 VGS=4.5V, ID=1A
-
- 4.2 -
- 41 14
-
µA VDS=80V, VGS=0
VGS=10V, ID=2A
mΩ
nC
nS
ID=2A
VDS=80V
VGS=10V
VDS=50V
VGS=10V
ID=2A
RG=3.3Ω
RD=15Ω
Test Conditions
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
- 1535
- 60
- 37
-
-
-
Source-Drain Diode
Forward On Voltage2 V
Continuous Source Current(Body Diode) I
Pulsed Source Current(
Notes:
1. Pulse width limited by Max. junction temperature.
2. Pulse width≦300us, duty cycle≦2%.
3.Surface mounted on 1 in2 copper pad of FR4 board; 135℃/W when mounted on Min. copper pad.
Body Diode
)1 I
SM
SD
S
-
-
-
-
1.2
-
2.5
-
10
VGS=0
pF
VDS=15V
f=1.0MHz
V IS=1A, VGS=0
A
VD= VG=0, VS=1.2V
A
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
18-Jun-2012 Rev. A Page 2 of 7
Page 3
DS(ON)
SSG4510
N & P-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
P-Ch: -2.5A, -100 V, R
N-Ch: 2.5 A, 100 V, R
DS(ON)
112 mΩ
ΩΩΩ
180 mΩΩΩΩ
P-CHANNEL ELECTRICAL CHARACTERISTICS
(TJ=25°C unless otherwise specified)
Parameter Symbol Min. Typ. Max. Unit
Drain-Source Breakdown Voltage BV
Gate Threshold Voltage V
Forward Transconductance g
Gate-Source Leakage Current I
TJ=25°C
Drain-Source Leakage Current
TJ=55°C
Static Drain-Source On-Resistance2 R
Total Gate Charge2 Qg - 31
Gate-Source Charge Qgs - 6.3 Gate-Drain (“Miller”) Change Qgd - 4.5 Turn-on Delay Time2 T
Rise Time Tr - 55 Turn-off Delay Time T
Fall Time Tf -
DSS
GS(th)
fs
GSS
I
DSS
DS(ON)
d(on)
d(off)
-100
-1 - -2.5 V VDS=VGS, ID= -250µA
-
-
- - -1
-
- - 180
- - 210 VGS= -4.5V, ID= -1A
- 12 -
- 40 -
Test Conditions
- - V VGS=0, ID= -250µA
7
-
- -5
40
- S VDS= -5V, ID= -2A
±100 nA VGS=±20V
µA VDS= -80V, VGS=0
VGS= -10V, ID= -2A
mΩ
-
-
nC
nS
ID= -1.5A
VDS= -80V
VGS= -10V
VDS= -50V
VGS= -10V
ID= -1A
RG=3.3Ω
RD=15Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward On Voltage2 V
Continuous Source Current(Body Diode) I
Pulsed Source Current(
Notes:
1. Pulse width limited by Max. junction temperature.
2. Pulse width≦300us, duty cycle≦2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 135℃/W when mounted on Min. copper pad.
Body Diode
)1 I
C
iss
C
oss
C
rss
1066
-
365
-
-
Source-Drain Diode
SM
SD
S
-
-
-
55
-
-
-
-
-
-
-1.2
-2.5
-10
VGS=0
VDS= -20V
pF
f=1.0MHz
V IS= -1A, VGS=0V
A
VD= VG=0V, VS= -1.2V
A
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
18-Jun-2012 Rev. A Page 3 of 7
Page 4
DS(ON)
Elektronische Bauelemente
CHARACTERISTIC CURVE (N-Ch)
SSG4510
N & P-Ch Enhancement Mode Power MOSFET
N-Ch: 2.5 A, 100 V, R
P-Ch: -2.5A, -100 V, R
DS(ON)
112 mΩ
ΩΩΩ
180 mΩΩΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
18-Jun-2012 Rev. A Page 4 of 7
Page 5
DS(ON)
Elektronische Bauelemente
CHARACTERISTIC CURVE (N-Ch)
SSG4510
N & P-Ch Enhancement Mode Power MOSFET
N-Ch: 2.5 A, 100 V, R
P-Ch: -2.5A, -100 V, R
DS(ON)
112 mΩ
ΩΩΩ
180 mΩΩΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
18-Jun-2012 Rev. A Page 5 of 7
Page 6
DS(ON)
N & P-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
N-Ch: 2.5 A, 100 V, R
P-Ch: -2.5A, -100 V, R
CHARACTERISTIC CURVE (P-Ch)
SSG4510
DS(ON)
112 mΩ
ΩΩΩ
180 mΩΩΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
18-Jun-2012 Rev. A Page 6 of 7
Page 7
DS(ON)
Elektronische Bauelemente
CHARACTERISTIC CURVE (P-Ch)
SSG4510
N & P-Ch Enhancement Mode Power MOSFET
N-Ch: 2.5 A, 100 V, R
P-Ch: -2.5A, -100 V, R
DS(ON)
112 mΩ
ΩΩΩ
180 mΩΩΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
18-Jun-2012 Rev. A Page 7 of 7
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