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ssg4503
Datasheet
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Datasheet ssg4503 Datasheet

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Page 1
Elektronische Bauelemente
P Channel -6.3A, -30V,RDS(ON) 36m
Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The SSG4503 provide the designer with the best combination of fast switching,
The SOP-8 package is universally preferred for all commercial
industrial surface mount application and suited for low
voltage applications such as DC/DC converters.
Features
SSG4503
N Channel 6.9A, 30V,RDS(ON) 28m
SOP-8
0.19
0.25
0.40
6.20
5.80
1.27Typ.
0.35
0.49
Dimensions in millimeters
4.80
5.00
0.90
0.25
0.10~0.25
o
45
0.375 REF
3.80
4.00
1.35
o
1.75
0
o
8
Ω
Ω
* Simple Drive Requirement * Lower On-Resistance
* Fast Switching Performance
Absolute Maximum Ratings
Parameter Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
3
3
1
Date Code
D1 D1 D2 D2
8
6
7
4503SS
2
1
S1 G1 S2 G2
3
VDS
VGS
ID@TA=25
ID@TA=7
IDM
PD@TA=25
Tj, Tstg
5
G1
4
Ratings
30
20
± ±
o
C
o
C
0
o
C
6.9
5.5 -5
30 -30
2.0
0.016
-55~+150
-30
20
-6.3
D1
G2
S1
D2
S2
Unit
V
V
A
A
A
W
o
W / C
o
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
3
Max.
Symbol Ratings Unit
o
Rthj-a
62.5
/W C
Page 1 of
7
Page 2
Elektronische Bauelemente
SSG4503
N Channel 6.9A, 30V,RDS(ON) 28m
P Channel -6.3A, -30V,RDS(ON) 36m
Enhancement Mode Power Mos.FET
Ω
Ω
Electrical Characteristics N Channel( Tj=25 C Unless otherwise specified)
Parameter Symbol Max.
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Drain-Source Leakage Current (Tj=70
Static Drain-Source On-Resistance
Total Gate Charge
2
o
C
o
)
C
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
BVDSS
BVDS/ Tj
VGS(th)
IGSS
IDSS
RDS(ON)
Qg
Qgs
Qgd
Td(ON)
Tr
(Off)
Td
T
f
Ciss
Coss
Crss
Gfs
o
Min. Unit
30
_
1.0
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
Typ.
_
0.005
_
_
_
_
_
_
9
2
6
8
7
19
6
610
160
120
3.0
±
970
_
_
100
1
25
28
42
15
_
_
_
_
_
_
_
_
_
V
o
V/
V
nA
uA
uA
Ω
m
nC
nS
pF
S5.7
Test Condition
VGS=0V, ID=250uA
Reference to 25 , ID=1mA
C
VDS=VGS, ID=250uA
VGS= 20V
VDS=30V,VGS=0
VDS=24V,VGS=0
VGS=10V, ID=6A
VGS=4.5V,
ID=6 A
VDS=24V
VGS=4.5V
VDD=15V
ID=1 A
VGS=10 V
RG=3.3
RD=15
VGS=0V VDS=25V
f=1.0MHz
VDS=10V, ID=6 A
o
C
±
ID=4A
Ω
Ω
Source-Drain Diode
Parameter Symbol Max.
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width 300us, dutycycle 2%.
3.Surface mounted on 1 inch2 copper pad of FR4 board;135 when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
2
≦
≦
Unit
Min.
V
SD
_
Trr
Qrr
Any changing of specification will not be informed individual
_
°C/W
Typ.
18
11
__
1.2
_
_
V
nS
nC
Test Condition
IS=
A, VGS=0V.Tj=25 C
6
IS GS=0V
=6A,V
dl/dt=100A/us
Page 2 of 7
o
Page 3
Elektronische Bauelemente
SSG4503
N Channel 6.9A, 30V,RDS(ON) 28m
P Channel -6.3A, -30V,RDS(ON) 36m
Enhancement Mode Power Mos.FET
Ω
Ω
Typ.
_
-0.004
_
_
_
_
_
_
15
3
9
12
8
42
34
960
300
220
5.8
_
_
-3.0
±
100
-1
-25
36
55
24
_
_
_
_
_
_
1540
_
_
_
Unit
V
o
V/
V
nA
uA
uA
Ω
m
nC
nS
pF
S
Test Condition
VGS=0V, ID=-250uA
Reference to 25 , ID=-1mA
C
VDS=VGS, ID=-250uA
VGS= 20V
VDS=-30V,VGS=0
VDS=-24V,VGS=0
VGS=-10V, ID=-6A
VGS=-4.5V, ID=-4A
ID=-6A
VDS=-24V
VGS=-4.5V
VDS=-15V
ID=-1A
VGS=-10V
RG=3.3
RD=15
VGS=0V VDS=-25V
f=1.0MHz
VDS=-10V, ID=-6A
Electrical Characteristics P-Channel( Tj=25 C Unless otherwise specified)
Parameter Symbol Max.
BVDS/ Tj
BVDSS
VGS(th)
IGSS
IDSS
RDS(ON)
Qg
Qgs
Qgd
Td(ON)
Tr
(Off)
Td
T
f
Ciss
Coss
Crss
Gfs
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Drain-Source Leakage Current (Tj=70
Static Drain-Source On-Resistance
Total Gate Charge
2
o
C
o
C
)
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
o
Min.
-30
_
-1.0
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
o
C
±
Ω
Ω
Source-Drain Diode
Parameter Symbol Max.
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width 300us, dutycycle 2%.
≦
≦
3.Surface mounted on 1 inch2 copper pad of FR4 board;135 when mounted on min. copper pad.
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
V
SD
Trr
Qrr
Min. Unit
_
_
°C/W
Typ.
24
18
__
-1.2
_
_
V
nS
nC
Test Condition
IS=-6A, VGS=0V.Tj=25 C
IS=-6A,VGS=0V dl/dt=100A/us
o
Page 3 of 7
Page 4
Elektronische Bauelemente
Characteristics Curve N-Channel
SSG4503
N Channel 6.9A, 30V,RDS(ON) 28m
P Channel -6.3A, -30V,RDS(ON) 36m
Enhancement Mode Power Mos.FET
Ω
Ω
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Reverse Diode
Fig 5. Forward Characteristics of
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Page 4 of 7
Page 5
Elektronische Bauelemente
N-Channel
Fig 7. Gate Charge Characteristics
SSG4503
N Channel 6.9A, 30V,RDS(ON) 28m
P Channel -6.3A, -30V,RDS(ON) 36m
Fig 8. Typical Capacitance Characteristics
Enhancement Mode Power Mos.FET
Ω
Ω
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
Page 5 of 7
Page 6
Description
Elektronische Bauelemente
P-Channel
Fig 1. Typical Output Characteristics
SSG4503
N Channel 6.9A, 30V,RDS(ON) 28m
P Channel -6.3A, -30V,RDS(ON) 36m
Enhancement Mode Power Mos.FET
Fig 2. Typical Output Characteristics
Ω
Ω
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Fig 5. Forward Characteristics of Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Page 6 of 7
Page 7
Elektronische Bauelemente
P-Channel
SSG4503
N Channel 6.9A, 30V,RDS(ON) 28m
P Channel -6.3A, -30V,RDS(ON) 36m
Enhancement Mode Power Mos.FET
Ω
Ω
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
h tp://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Fig 12. Gate Charge Waveform
Page 7 of 7
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