Datasheet ssg4502c Datasheet [en, de]

r

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

These miniature surface mount MOSFETs
utilize a high cell density trench process to provide low
R

and to ensure minimal power loss and heat

DS(on)

dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,.
printers, PCMCIA cards, cellular and cordless
telephones

FEATURES

 Low R
 Low thermal impedance copper leadframe SOP-8 saves board space
 Fast switching speed
 High performance trench technology

provides higher efficiency and extends battery life.

DS(on)

PACKAGE INFORMATION

Package MPQ LeaderSize

SOP-8 2.5K 13’ inch

SSG4502C

N-Ch: 10 A, 30 V, R

P-Ch: -8.5 A, -30 V, R

N & P-Ch Enhancement Mode Power MOSFET

SOP-8

H

G

Millimeter Millimete

REF.

Min. Max.

A 5.8 6.20 H 0.35 0.51
B 4.80 5.00 J 0.375 REF.
C 3.80 4.00 K 45°
D0° 8° L 1.35 1.75
E 0.50 0.93 M 0.10 0.25
F 0.19 0.25 N 0.25 REF.
G 1.27 TYP.

S

G

S

G

DS(ON)

DS(ON)

B

A

REF.

16 m

23 m

C

K

J

F

Min. Max.

D

L

M

N

E

D

D

D

D

MAXIMUM RATINGS (T

= 25°C unless otherwise specified)

A

Parameter Symbol N- Ch P- Ch Unit

Drain-Source Voltage VDS 30 -30 V

Gate-Source Voltage VGS 20 -20 V

Continuous Drain Current 1

Pulsed Drain Current 2 I

Continuous Source Current (Diode Conduction) 1 I

Total Power Dissipation 1

Operating Junction & Storage Temperature Range TJ, T

ID @ TA = 25°C 10 -8.5 A

I

@ TA = 70°C 8.1 -6.8 A

D

±50 ±50 A

DM

2.3 -2.1 A

S

PD @ TA = 25°C 2.1 2.1 W

P

@ TA = 70°C 1.3 1.3 W

D

-55 ~ 150 °C

STG

Thermal Resistance Ratings

Maximum Junction-to-Ambient

1

t≦ 10 sec 62.5 °C / W

Steady State

R

θJA

110 °C / W

Notes:

1. Surface Mounted on 1” x 1” FR4 Board.

2. Pulse width limited by maximum junction temperature.

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

27-Dec-2010 Rev. B Page 1 of 6

SSG4502C

N-Ch: 10 A, 30 V, R

Elektronische Bauelemente

N & P-Ch Enhancement Mode Power MOSFET

P-Ch: -8.5 A, -30 V, R

DS(ON)

DS(ON)

16 m

23 m

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise specified)

A

Parameter Symbol Ch Min. Typ. Max. Unit Teat Conditions

Static

Drain-Source Breakdown Voltage V

Gate Threshold Voltage V

Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current 1 I

Drain-Source On-Resistance 1 R

Forward Transconductance 1 g

Total Gate Charge Qg

Gate-Source Charge Qgs

Gate-Drain Charge Qgd

Turn-On Delay Time T

Rise Time Tr

Turn-Off Delay Time T

Fall Time Tf

Notes:

1. Pulse test：PW ≦ 300

2. Guaranteed by design, not subject to production testing.

μs duty cycle ≦ 2%.

(BR)DSS

GS(th)

GSS

DSS

D(on)

DS(ON)

d(on)

d(off)

N 30 - - VGS= 0V, ID= 250μA

P -30 - -

N 1 - - VDS= VGS, ID= 250μA

P -1 - -

N - - ±100 VDS= 0V, VGS= 20V

P - - ±100

N - - 1 VDS= 24V, VGS= 0V

P - - -1

N 20 - - VDS= 5V, VGS= 10V

P -50 - -

N

P

N - 40 - VDS= 15V, ID= 10A

fs

P - 31 -

N - 12 -

P - 13 -

N - 3.3 -

P - 5.8 -

N - 4.5 -

P - 12 -

N - 20 -

P - 15 -

N - 9 -

P - 16 -

N - 70 -

P - 62 -

N - 20 -

P - 46 -

- - 16 VGS= 10V, ID= 10A

- - 20 VGS= 4.5V, ID= 8.4A

- - 23 VGS= -10V, ID= -8.5A

- - 33

Dynamic 2

V

VGS= 0V, ID= -250μA

V

VDS= VGS, ID= -250μA

nA

VDS= 0V, VGS= -20V

μA

VDS= -24V, VGS= 0V

A

mΩ

S

nC

nS

= -5V, VGS= -10V

V

DS

= -4.5V, ID= -6.8A

V

GS

VDS= -15V, ID= -9.5A

N-Channel
ID= 10A, VDS= 15V, VGS= 4.5V

P-Channel
I

= -10A, VDS= -15V, VGS= -4.5V

D

N-Channel
VDD= 15V, VGS= 10V
I

= 1A, R

D

P-Channel
V

= -15V, VGS= -10V

DD

= -1A, R

I

D

GEN

GEN

= 25Ω

= 15Ω

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

27-Dec-2010 Rev. B Page 2 of 6

SSG4502C

N-Ch: 10 A, 30 V, R

Elektronische Bauelemente

N & P-Ch Enhancement Mode Power MOSFET

P-Ch: -8.5 A, -30 V, R

CHARACTERISTIC CURVES (N-Channel)

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

27-Dec-2010 Rev. B Page 3 of 6

DS(ON)

DS(ON)

16 m

23 m

SSG4502C

N-Ch: 10 A, 30 V, R

Elektronische Bauelemente

N & P-Ch Enhancement Mode Power MOSFET

P-Ch: -8.5 A, -30 V, R

CHARACTERISTIC CURVES

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

27-Dec-2010 Rev. B Page 4 of 6

DS(ON)

DS(ON)

16 m

23 m

Elektronische Bauelemente

CHARACTERISTIC CURVES (P-Channel)

SSG4502C

N-Ch: 10 A, 30 V, R

P-Ch: -8.5 A, -30 V, R

N & P-Ch Enhancement Mode Power MOSFET

DS(ON)

DS(ON)

16 m

23 m

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

27-Dec-2010 Rev. B Page 5 of 6

Elektronische Bauelemente

CHARACTERISTIC CURVES

SSG4502C

N-Ch: 10 A, 30 V, R

N & P-Ch Enhancement Mode Power MOSFET

P-Ch: -8.5 A, -30 V, R

DS(ON)

DS(ON)

16 m

23 m

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

27-Dec-2010 Rev. B Page 6 of 6