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ssg4501
Datasheet
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Datasheet ssg4501 Datasheet

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Page 1
Elektronische Bauelemente
P Channel -5.3A, -30V,RDS(ON) 50m
Enhancement Mode Power Mos.FET
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Description
The SSG4501 provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial
industrial surface mount application and suited for low
voltage applications such as DC/DC converters.
SSG4501
N Channel 7A, 30V,RDS(ON) 28m
SOP-8
0.19
0.25
0.40
6.20
5.80
1.27Typ.
0.35
0.49
Dimensions in millimeters
4.80
5.00
0.90
0.25
0.10~0.25
o
45
1.35
o
1.75
0
o
8
Ω
0.375 REF
3.80
4.00
Ω
* Simple Drive Requirement * Lower On-resistance
* Fast Switching Performance
Absolute Maximum Ratings
Parameter Symbol
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
Total Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
3
3
1
Date Code
D1 D1 D2 D2
8
6
7
4501SS
2
1
S1 G1 S2 G2
3
VDS
VGS ID@TA=25 ID@TA=7
IDM
PD@TA=25
Tj, Tstg
5
G1
4
Ratings
30
20
±
o
C
o
C
0
o
C
7
5.8 -4.7 20 -20
2.0
0.016
-55~+150
-30
20
±
-5.3
D1
G2
S1
D2
S2
Unit
V
V
A A
A
W
o
W / C
o
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
3
Max.
Symbol Ratings Unit
o
Rthj-a
62.5
/W C
Page 1 of 9
Page 2
Elektronische Bauelemente
SSG4501
N Channel 7A, 30V,RDS(ON) 28m
P Channel -5.3A, -30V,RDS(ON) 50m
Enhancement Mode Power Mos.FET
Ω
Ω
Electrical Characteristics N Channel( Tj=25 C Unless otherwise specified)
Parameter Symbol Max.
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 )
Drain-Source Leakage Current (Tj=70
Static Drain-Source On-Resistance
Total Gate Charge
2
o
C
o
)
C
2
Gate-Source Charge
Gate-Drain ("Miller") Charge Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
BVDSS
BVDS/ Tj
VGS(th)
IGSS
IDSS
RDS(ON)
Qg Qgs
Qgd
Td(ON)
Tr
(Off)
Td
T
f
Ciss
Coss
Crss
o
Min. Unit
30
_
1.0
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
Typ.
_
0.02
_
_
_
_
_
_
8.4
2.1
4.7 6
5.2
18.8
4.4
645
150
95
±
_
_
3.0
100
1
25
28 42
_
_
_
_
_
_
_
_
_
_
V
o
V/
C
V
nA
uA
uA
Ω
m
nC
nS
pF
Test Condition
VGS=0V, ID=250uA
Reference to 25 , ID=1mA
VDS=VGS, ID=250uA
VGS= 20V
VDS=30V,VGS=0
VDS=24V,VGS=0
VGS=10V, ID=7A
VGS=4.5V,
ID=7A VDS=24V VGS=4.5V
VDD=15V
ID=1A VGS=10V RG=3.3
RD=15
VGS=0V VDS=25V
f=1.0MHz
±
Ω
Ω
ID=5A
o
C
Forward Transconductance
Source-Drain Diode
Parameter Symbol Max.
Forward On Voltage
Continous Source Current (Body Diode)
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width 300us, dutycycle 2%.
3.Surface mounted on 1 inch2 copper pad of FR4 board;135 when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
2
≦
≦
Gfs
VSD
Is
Any changing of specification will not be informed individual
_
Min. Unit
_
Typ.
__
_
°C/W
_
1.2
1.67
S13
VDS=10V, ID=7A
Test Condition
IS=7A, VGS=0V.Tj=25 C
V
A
VD=VG=0V,VS=1.2V
o
Page 2 of 9
Page 3
Elektronische Bauelemente
SSG4501
N Channel 7A, 30V,RDS(ON) 28m
P Channel -5.3A, -30V,RDS(ON) 50m
Enhancement Mode Power Mos.FET
Ω
Ω
Electrical Characteristics P-Channel( Tj=25 C Unless otherwise specified)
Parameter Symbol Max.
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 )
Drain-Source Leakage Current (Tj=70
Static Drain-Source On-Resistance
Total Gate Charge
2
o
C
o
C
)
2
Gate-Source Charge
Gate-Drain ("Miller") Charge Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
BVDSS
BVDS/ Tj
VGS(th)
IGSS
IDSS
RDS(ON)
Qg Qgs
Qgd
Td(ON)
Tr
(Off)
Td
T
f
Ciss
Coss
Crss
o
Min. Unit
-30
_
-1.0
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
Typ.
_
-0.028
_
_
_
_
_
_
20
3.5 2
12
20
45
27
790
440
120
-3.0
±
-25
_
_
100
-1
50
90
_
_
_
_
_
_
_
_
_
_
V
o
V/
C
V
nA
uA
uA
Ω
m
nC
nS
pF
Test Condition
VGS=0V, ID=-250uA
Reference to 25 , ID=-1mA
VDS=VGS, ID=-250uA
VGS= 20V
VDS=-30V,VGS=0
VDS=-24V,VGS=0
VGS=-10V, ID=-5.3A
VGS=-4.5V, ID=-4.2A
ID=-5.3A VDS=-15V VGS=-10V
VDS=-15V
ID=-1A VGS=-10V RG=6
RD=15
VGS=0V VDS=-15V
f=1.0MHz
±
o
C
Ω
Ω
Forward Transconductance
Gfs
_
8.5
_
S
VDS=-10V, ID=-5.3A
Source-Drain Diode
Parameter Symbol Max.
Forward On Voltage
Continous Source Current (Body Diode)
2
VSD
Is
Min. Unit
_
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width 300us, dutycycle 2%.
≦
≦
3.Surface mounted on 1 inch2 copper pad of FR4 board;135 when mounted on min. copper pad.
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Typ.
°C/W
Test Condition
__
_
-1.2
-1.67
V
A
IS=
A, VGS=0V.Tj=25 C
-2.6
VD=VG=0V,VS
=-1.2V
o
Page 3 of 9
Page 4
Elektronische Bauelemente
Characteristics Curve N-Channel
SSG4501
N Channel 7A, 30V,RDS(ON) 28m
P Channel -5.3A, -30V,RDS(ON) 50m
Enhancement Mode Power Mos.FET
Ω
Ω
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Fig 5. Maximum Drain Current
v.s. Case Temperature
Fig 6. Type Power Dissipation
Page 4 of 9
Page 5
Elektronische Bauelemente
N-Channel
Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance
SSG4501
N Channel 7A, 30V,RDS(ON) 28m
P Channel -5.3A, -30V,RDS(ON) 50m
Enhancement Mode Power Mos.FET
Ω
Ω
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Fig 11. Forward Characteristics of Reverse Diode
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
Page 5 of 9
Page 6
Elektronische Bauelemente
N-Channel
SSG4501
N Channel 7A, 30V,RDS(ON) 28m
P Channel -5.3A, -30V,RDS(ON) 50m
Enhancement Mode Power Mos.FET
Ω
Ω
Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 6 of 9
Page 7
Elektronische Bauelemente
P-Channel
SSG4501
N Channel 7A, 30V,RDS(ON) 28m
P Channel -5.3A, -30V,RDS(ON) 50m
Enhancement Mode Power Mos.FET
Ω
Ω
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Maximum Drain Current
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
v.s. Case Temperature
Fig 6. Type Power Dissipation
Page 7 of 9
Page 8
Description
Elektronische Bauelemente
P-Channel
SSG4501
N Channel 7A, 30V,RDS(ON) 28m
P Channel -5.3A, -30V,RDS(ON) 50m
Enhancement Mode Power Mos.FET
Ω
Ω
Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Reverse Diode
Fig 11. Forward Characteristics of
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
Page 8 of 9
Page 9
Elektronische Bauelemente
P-Channel
SSG4501
N Channel 7A, 30V,RDS(ON) 28m
P Channel -5.3A, -30V,RDS(ON) 50m
Enhancement Mode Power Mos.FET
Ω
Ω
Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform
h tp://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 9 of 9
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