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Elektronische Bauelemente
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low R
power loss and heat dissipation.
and to ensure minimal
DS(on)
FEATURES
Low R
extends battery life.
Low thermal impedance copper leadframe
SOP-8 saves board space.
Fast switching speed.
High performance trench technology.
provides higher efficiency and
DS(on)
APPLICATION
DC-DC converters and power management
in portable and battery-powered products such
as computers, printers, PCMCIA cards, cellular
and cordless telephones.
PACKAGE INFORMATION
Package MPQ Leader Size
SOP-8 2.5K 13’ inch
RoHS Compliant Product
SSG4499P
-6.8 A, -60 V, R
P-Ch Enhancement Mode Power MOSFET
H
G
Millimete
REF.
Min. Max. Min. Max.
A 5.80 6.20 H 0.35 0.49
B 4.80 5.00 J 0.375 REF.
C 3.80 4.00 K 45°
D0° 8° L 1.35 1.75
E 0.40 0.90 M 0.10 0.25
F 0.19 0.25 N 0.25 REF.
G 1.27 TYP.
S
S
S
GD
DS(ON)
SOP-8
B
A
45 m
C
J
Millimete
REF.
D
L
M
N
K
E
F
D
D
D
MAXIMUM RATINGS (T
= 25°C unless otherwise specified)
A
Parameter Symbol Ratings Unit
Drain-Source Voltage VDS -60 V
Gate-Source Voltage VGS ±20 V
T
= 25°C
Continuous Drain Current 1
Pulsed Drain Current 2 I
Continuous Source Current (Diode Conduction) 1 I
Total Power Dissipation 1
Operating Junction & Storage Temperature Range TJ, T
A
TA = 70°C -6.3 A
T
= 25°C
A
TA = 70°C 2.6 W
I
D
-30 A
DM
-2.5 A
S
P
D
-55 ~ 150 °C
STG
-6.8 A
3.1 W
Thermal Resistance Ratings
Thermal Resistance Junction-Ambient (Max.) 1 t ≦ 10 sec R
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
50 °C / W
θJA
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
07-Apr-2011 Rev. A Page 1 of 2
Page 2
SSG4499P
-6.8 A, -60 V, R
Elektronische Bauelemente
P-Ch Enhancement Mode Power MOSFET
DS(ON)
45 m
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise specified)
A
Parameter Symbol Min. Typ. Max. Unit Teat Conditions
Static
Gate-Threshold Voltage V
Gate-Body Leakage Current I
Zero Gate Voltage Drain Current I
On-State Drain Current 1 I
Drain-Source On-Resistance 1 R
Forward Transconductance 1 g
Diode Forward Voltage VSD - - -1.2 V IS= -2.5A, VGS=0
-1 - - V VDS= VGS, ID= -250μA
GS(th)
- - ±100 nA VDS=0, VGS= ±20V
GSS
DSS
- - -1
μA
V
= -48V, VGS=0
DS
- - -10 VDS= -48V, VGS=0, TJ=55°C
-20 - - A VDS= -5V, VGS= -10V
D(on)
DS(ON)
- - 45
mΩ
V
= -10V, ID= -6.8A
GS
- - 60 VGS= -4.5V, ID= -5.9A
- 8 - S VDS= -15V, ID= -6.8A
fs
Dynamic 2
Total Gate Charge Qg - 18 -
Gate-Source Charge Qgs - 5 -
Gate-Drain Charge Qgd - 2 -
nC
ID= -6.8A
V
= -30V
DS
V
= -4.5V
GS
Turn-On Delay Time T
- 8 -
d(on)
Rise Time Tr - 10 -
Turn-Off Delay Time T
- 35 -
d(off)
Fall Time Tf - 12 -
Notes:
1. Pulse test：PW ≦ 300μs duty cycle ≦ 2%.
2. Guaranteed by design, not subject to production testing.
nS
VDD= -30V
I
= -1A
D
V
= -10V
GEN
R
=30Ω
L
R
=6Ω
G
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
07-Apr-2011 Rev. A Page 2 of 2
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