Page 1
r
Elektronische Bauelemente
FEATURES
Low R
Low thermal impedance.
Fast switching speed.
trench technology.
DS(on)
APPLICATIONS
White LED boost converters
Automotive Systems
Industrial DC/DC Conversion Circuits
PACKAGE INFORMATION
SSG4480N
7.1 A, 80 V, R
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
H
DS(ON)
SOP-8
G
41 m
B
A
D
L
M
C
N
K
J
E
F
Package MPQ LeaderSize
SOP-8 2.5K 13’ inch
Millimeter Millimete
REF.
Min. Max.
A 5.80 6.20 H 0.35 0.49
B 4.80 5.00 J 0.375 REF.
C 3.80 4.00 K 45°
D0° 8° L 1.35 1.75
E 0.40 0.90 M 0.10 0.25
F 0.19 0.25 N 0.25 REF.
G 1.27 TYP.
REF.
Min. Max.
MAXIMUM RATINGS (T
= 25°C unless otherwise specified)
A
S
S
S
G
D
D
D
D
Parameter Symbol Ratings Unit
Drain-Source Voltage VDS 80 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current 1
Pulsed Drain Current 2 I
Continuous Source Current (Diode Conduction) 1 I
Total Power Dissipation 1
Operating Junction & Storage Temperature Range TJ, T
ID @ TA = 25°C 7.1 A
I
@ TA = 70°C 6 A
D
50 A
DM
3.8 A
S
PD @ TA = 25°C 3.1 W
P
@ TA = 70°C 2.2 W
D
-55 ~ 150 °C
STG
Thermal Resistance Ratings
t≦10 sec 40 °C / W
Thermal Resistance Junction-ambient (Max.)
1
Steady State
R
θJA
80 °C / W
Notes
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
17-Dec-2010 Rev. C Page 1 of 4
Page 2
SSG4480N
7.1 A, 80 V, R
Elektronische Bauelemente
N-Ch Enhancement Mode Power MOSFET
DS(ON)
41 m
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise specified)
A
Parameter Symbol Min. Typ. Max. Unit Teat Conditions
Static
Gate Threshold Voltage V
Gate-Body Leakage Current I
Zero Gate Voltage Drain Current I
On-State Drain Current1 I
Drain-Source On-Resistance1 R
Forward Transconductance1 g
Diode Forward Voltage VSD - 0.76 - V IS=2A, VGS=0V
Total Gate Charge Qg - 19.5 -
Gate-Source Charge Qgs - 4.5 -
Gate-Drain Charge Qgd - 10 -
Turn-On Delay Time T
Rise Time Tr - 24 -
Turn-Off Delay Time T
Fall Time Tf - 46 -
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Notes
1. Pulse test：PW ≦ 300
2. Guaranteed by design, not subject to production testing.
μs duty cycle ≦ 2%.
1 - - V VDS= VGS, ID=-250μA
GS(th)
- - ±10 μA VDS= 0V, VGS= ±20V
GSS
DSS
20 - - A VDS=5V, VGS=10V
D(on)
DS(ON)
- 20 - S VDS=15V, ID=5.4A
fs
- 12.8 -
d(on)
- 52.3 -
d(off)
- 1522 -
ISS
- 129 -
OSS
- 87 -
RSS
- - 1 VDS=64V, VGS=0V
- - 10
- - 41 VGS=10V, ID=5.4A
- - 57
Dynamic 2
μA
mΩ
nC
nS
pF
V
DS
V
GS
ID=5.4A
V
DS
V
GS
V
DD
I
=5.4A
D
V
GEN
R
=7.5Ω
L
R
GEN
VDS=15V
V
GS
f=1Mhz
=64V, VGS=0V, TJ=55°C
=4.5V, ID=4.6A
=40V
=4.5V
=40V
=10V
=6Ω
=0V
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
17-Dec-2010 Rev. C Page 2 of 4
Page 3
SSG4480N
Elektronische Bauelemente
N-Ch Enhancement Mode Power MOSFET
7.1 A, 80 V, R
TYPICAL ELECTRICAL CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
17-Dec-2010 Rev. C Page 3 of 4
DS(ON)
41 m
Page 4
Elektronische Bauelemente
TYPICAL ELECTRICAL CHARACTERISTICS CURVE
SSG4480N
7.1 A, 80 V, R
N-Ch Enhancement Mode Power MOSFET
DS(ON)
41 m
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
17-Dec-2010 Rev. C Page 4 of 4
Loading...