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Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize high cell density process. Low R
DS(on)
assures minimal power loss and conserves
energy, making this device ideal for use in
power management circuitry.
FEATURES
Low R
battery life.
Miniature SOP-8 surface mount package saves
board space.
High power and current handling capability.
provides higher efficiency and extends
DS(on)
APPLICATION
PWMDC-DC converters, power management
in portable and battery-powered products such as
computers, printers, battery charger, telecommunication
power system, and telephones power system.
PACKAGE INFORMATION
Package MPQ Leader Size
SOP-8 2.5K 13’ inch
SSG4463P
P-Ch Enhancement Mode Power MOSFET
-13.4A, -20V, R
H
REF.
A 5.80 6.20 H 0.35 0.49
B 4.80 5.00 J 0.375 REF.
C 3.80 4.00 K 45°
D 0° 8° L 1.35 1.75
E 0.40 0.90 M 0.10 0.25
F 0.19 0.25 N 0.25 REF.
G 1.27 TYP.
S
S
S
G D
11.5 m
DS(ON)
SOP-8
B
A
G
Millimeter Millimete
Min. Max.
REF.
C
J
Min. Max.
D
L
M
N
K
E
F
D
D
D
MAXIMUM RATINGS (T
= 25°C unless otherwise specified)
A
Parameter Symbol Ratings Unit
Drain-Source Voltage VDS -20 V
Gate-Source Voltage VGS ±12 V
TA = 25°C -13.4 A
Continuous Drain Current 1
T
= 70°C
A
Pulsed Drain Current 2 I
Continuous Source Current (Diode Conduction) 1 I
I
D
±50 A
DM
-2.1 A
S
-8.4 A
TA = 25°C 3.1 W
Total Power Dissipation 1
T
= 70°C
A
Operating Junction & Storage Temperature Range TJ, T
P
D
-55 ~ 150 °C
STG
2.0 W
Thermal Resistance Rating
Thermal Resistance Junction-Case (Max.)
Thermal Resistance Junction-Ambient (Max.) 1 t ≦ 5 sec R
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
01-May-2011 Rev. C Page 1 of 4
1
t ≦ 5 sec R
25 °C / W
θJC
40 °C / W
θJA
Page 2
SSG4463P
Elektronische Bauelemente
P-Ch Enhancement Mode Power MOSFET
-13.4A, -20V, R
DS(ON)
11.5 m
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise specified)
A
Parameter Symbol Min. Typ. Max. Unit Teat Conditions
Static
Gate Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current 1 I
Drain-Source On-Resistance 1 R
Forward Transconductance 1 g
Diode Forward Voltage VSD - -0.6 - V IS= -2.5A, VGS=0
-0.7 - - V VDS=VGS, ID= -250μA
GS(th)
- - ±100 nA VDS=0, VGS= ±12V
GSS
DSS
-50 - - A VDS= -4.5V, VGS= -10V
D(on)
DS(ON)
- 70 - S VDS= -15V, ID= -11.5A
fs
- - -1 VDS= -16V, VGS=0
- - -5
- - 11.5 VGS= -4.5V, ID= -11.5A
- - 19 VGS= -2.5V, ID= -10.4A
- - 35
μA
mΩ
= -16V, VGS=0, TJ=55°C
V
DS
= -1.8V, ID= -7.7A
V
GS
Dynamic 2
Total Gate Charge Qg - 33.4 -
Gate-Source Charge Qgs - 5.9 -
Gate-Drain Charge Qgd - 8.1 -
Turn-On Delay Time T
Rise Time Tr - 23 -
Turn-Off Delay Time T
Fall Time Tf - 134 -
Notes:
1. Pulse test：PW ≦ 300μs duty cycle ≦ 2%.
2. Guaranteed by design, not subject to production testing.
- 20 -
d(on)
- 289 -
d(off)
nC
nS
ID= -11.5A
V
= -10V
DS
V
= -4.5V
GS
VDD= -10V
I
= -1A
D
V
= -4.5V
GEN
R
= 6Ω
L
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
01-May-2011 Rev. C Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVES
SSG4463P
P-Ch Enhancement Mode Power MOSFET
-13.4A, -20V, R
DS(ON)
11.5 m
W
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
01-May-2011 Rev. C Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVES
SSG4463P
P-Ch Enhancement Mode Power MOSFET
-13.4A, -20V, R
DS(ON)
11.5 m
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
01-May-2011 Rev. C Page 4 of 4
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