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Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low R
power loss and heat dissipation.
and to ensure minimal
DS(on)
FEATURES
Low R
extends battery life.
Low thermal impedance copper leadframe
SOP-8 saves board space.
Fast switching speed.
High performance trench technology.
provides higher efficiency and
DS(on)
APPLICATION
DC-DC converters and power management in portable
and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION
Package MPQ LeaderSize
SOP-8 2.5K 13’ inch
SSG4436N
22A, 30V, R
N-Ch Enhancement Mode Power MOSFET
H
REF.
A 5.80 6.20 H 0.35 0.49
B 4.80 5.00 J 0.375 REF.
C 3.80 4.00 K 45°
D0° 8° L 1.35 1.75
E 0.40 0.90 M 0.10 0.25
F 0.19 0.25 N 0.25 REF.
G 1.27 TYP.
S
S
S
G
4.6m
DS(ON)
SOP-8
B
L
A
G
Millimeter Millimete
Min. Max.
REF.
C
K
J
F
Min. Max.
D
M
N
E
D
D
D
D
ABSOLUTE MAXIMUM RATINGS (T
Parameter Symbol Ratings Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current 1
Pulsed Drain Current 2 I
Continuous Source Current (Diode Conduction) 1 I
Total Power Dissipation 1
Operating Junction & Storage Temperature Range TJ, T
Thermal Resistance Junction-Ambient (Max.) 1
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
= 25°C unless otherwise specified)
A
TA = 25°C 22 A
I
T
A
= 70°C
D
60 A
DM
2.9 A
S
18 A
TA = 25°C 3.1 W
P
T
A
= 70°C
D
-55 ~ 150 °C
STG
2.2 W
Thermal Resistance Ratings
t ≦ 10 sec 40 °C / W
Steady State
R
θJA
80 °C / W
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
01-Mar-2011 Rev. D Page 1 of 4
Page 2
SSG4436N
22A, 30V, R
Elektronische Bauelemente
N-Ch Enhancement Mode Power MOSFET
DS(ON)
4.6m
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise specified)
A
Parameter Symbol Min. Typ. Max. Unit Teat Conditions
Static
Gate-Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current 1 I
Drain-Source On-Resistance 1 R
Forward Transconductance 1 g
Diode Forward Voltage VSD - 0.7 - V IS= 2.3A, VGS= 0V
1 - 3 V VDS= VGS, ID= 250μA
GS(th)
- - 100 nA VDS= 0V, VGS= 20V
GSS
- - 1 μA VDS= 24V, VGS= 0V
DSS
30 - - A VDS= 5V, VGS= 10V
D(on)
- - 5 μA V
DS
- - 4.6 VGS= 10V, ID= 12A
DS(ON)
- 90 - S VDS= 15V, ID= 18.6A
fs
- - 6.8
mΩ
V
GS
Dynamic 2
Total Gate Charge Qg - 25 -
Gate-Source Charge Qgs - 6 -
Gate-Drain Charge Qgd - 9 -
Turn-On Delay Time T
- 20 -
d(on)
Rise Time Tr - 13 -
Turn-Off Delay Time T
- 82 -
d(off)
Fall Time Tf - 43 -
Notes:
1. Pulse test：PW ≦ 300
2. Guaranteed by design, not subject to production testing.
μs duty cycle ≦ 2%.
nC
nS
I
= 18.6A
D
V
DS
V
GS
V
DD
I
= 1A
D
V
GEN
R
L
= 24V, VGS= 0V, TJ= 55°C
= 4.5V, ID= 10A
= 15V
= 4.5V
= 15V
= 10V
= 6Ω
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
01-Mar-2011 Rev. D Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTICS CURVE
SSG4436N
22A, 30V, R
N-Ch Enhancement Mode Power MOSFET
DS(ON)
4.6m
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
01-Mar-2011 Rev. D Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTICS CURVE
SSG4436N
22A, 30V, R
N-Ch Enhancement Mode Power MOSFET
DS(ON)
4.6m
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
01-Mar-2011 Rev. D Page 4 of 4
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