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Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSG4435 provide the designer with the best
combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness. The SOP-8 package
is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage applications
such as DC/DC converters.
FEATURES
Low on-resistance
Simple Drive Requirement
Fast switching
MARKING
4435SC
= Date Code
SSG4435
-8A, -30V, R
P-Channel Enhancement Mode Power MOSFET
H
REF.
A 5.80 6.20 H 0.35 0.49
B 4.80 5.00 J 0.375 REF.
C 3.80 4.00 K 45°
D0° 8° L 1.35 1.75
E 0.40 0.90 M 0.10 0.25
F 0.19 0.25 N 0.25 REF.
G 1.27 TYP.
20m
DS(ON)
SOP-8
B
L
A
G
Millimeter Millimete
Min. Max.
REF.
C
K
J
F
Min. Max.
D
M
N
E
PACKAGE INFORMATION
Package MPQ LeaderSize
SOP-8 3K 13’ inch
S
S
S
GD
ABSOLUTE MAXIMUM RATINGS (T
Parameter Symbol Ratings Unit
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current 3
Pulsed Drain Current
Power Dissipation P
Maximum Junction to Ambient 3 R
Linear Derating Factor 0.02 W / °C
Operating Junction & Storage Temperature Range TJ, T
1.2
I
= 25°C unless otherwise specified)
A
TA = 25°C -8
I
T
= 70°C
A
D
-50 A
DM
2.5 W
D
50 °C / W
θJA
-55~150 °C
STG
-6
A
D
D
D
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
01-Mar-2011 Rev. B Page 1 of 4
Page 2
SSG4435
-8A, -30V, R
Elektronische Bauelemente
P-Channel Enhancement Mode Power MOSFET
DS(ON)
20m
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise specified)
j
Parameter Symbol Min. Typ. Max. Unit Test condition
Static
Drain-Source Breakdown Voltage BV
Breakdown Voltage Temp.
Coefficient
Gate-Threshold Voltage V
Forward Transfer Conductance Gfs - 20 - S VDS= -10V, ID= -8A
Gate-Body Leakage I
Zero Gate Voltage Drain
Current
TA = 25°C - - -1 μA VDS= -30V, VGS=0
= 70°C
T
A
Drain-Source On-Resistance 2 R
Total Gate Charge 2 Q
Gate-Source Charge Qgs - 3.4 -
Gate-Drain (“Miller”) Charge Qgd - 5.1 -
Turn-On Delay Time 2 T
Rise Time Tr - 23.8 -
Turn-Off Delay Time T
Fall Time Tf - 9 -
-30 - - V VGS=0, ID=-250μA
DSS
BV△
/T△
DS
-1 - -3 V VDS=VGS, ID= -250μA
GS(th)
- - ±100 nA VGS=±20V
GSS
I
DSS
- -0.037 - V / °C Reference to 25°C, ID= -1mA
j
- - -5 μA V
= -24V, VGS=0
DS
- - 20 VGS= -10V, ID= -8A
DS(ON)
- 12.4 -
g
- 24.2 -
d(on)
- 58.2 -
d(off)
- - 35
mΩ
VGS= -4.5V, ID= -5A
= -12A
I
D
V
nC
nS
DS
V
GS
V
DS
I
= -1A
D
V
GS
R
G
=3.3Ω
= -20V
= -4.5V
= -15V
= -10V
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Forward On Voltage 2 V
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Notes:
1 Pulse width limited by Max. junction temperature.
2 Pulse width≦300us, duty cycle≦2%.
3 Surface mounted on 1 in
1
2
copper pad of FR4 board; 125°C/W when mounted on min. copper pad.
- 1345 -
iss
- 194 -
oss
- 158 -
rss
- -0.75 -1.2 V IS= -2.1A, VGS=0, Tj=25°C
DS
I
- - -2.1 A VD=VG=0V, VS= -1.2V
s
- - -50 A
I
SM
Source-Drain Diode
pF
VGS=0
V
= -15V
DS
f=1.0MHz
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
01-Mar-2011 Rev. B Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTICS CURVE
SSG4435
-8A, -30V, R
P-Channel Enhancement Mode Power MOSFET
DS(ON)
20m
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
01-Mar-2011 Rev. B Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTICS CURVE
SSG4435
-8A, -30V, R
P-Channel Enhancement Mode Power MOSFET
DS(ON)
20m
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
01-Mar-2011 Rev. B Page 4 of 4
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