Page 1
A
H
B
M
D
C
J
K
F
L
E
N
G
Millimeter
Millimeter
Min. Max. Min. Max.
A 5.80 6.20 H 0.35 0.49
B 4.80 5.00 J 0.375 REF.
C 3
.80 4.00 K 45°
D 0° 8° L 1.35 1.75
E 0.40 0.90 M 0.10 0.25
F 0.19 0.25 N 0.25 REF.
G 1.27 TYP.
S
S
G D
D
D
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize High Cell Density process. Low R
DS(on)
assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry.
FEATURES
Low R
extends battery life
Miniature SO-8 Surface Mount Package Saves Board Space
High power and current handling capability
Extended VGS range (±25) for battery pack applications
provides higher efficiency and
DS(on)
APPLICATION
PWMDC-DC converters, power management in
portable and battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
PACKAGE INFORMATION
Package MPQ Leader Size
SSG4407P
-15A, -30V, R
P-Ch Enhancement Mode Power MOSFET
REF.
S
DS(ON)
SOP-8
9 mΩ
REF.
ΩΩΩ
D
SOP-8 2.5K 13 inch
MAXIMUM RATINGS
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±25 V
Continuous Drain Current 1
Pulsed Drain Current 2 IDM ±50 A
Continuous Source Current (Diode Conduction) 1 IS -2.1 A
Total Power Dissipation 1
Operating Junction & Storage Temperature Range TJ, T
Thermal Resistance Junction-Case (Max.)
Thermal Resistance Junction-Ambient (Max.)
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
(TA = 25°C unless otherwise specified)
Parameter Symbol Ratings Unit
TA=25°C
ID
TA=70°C -11 A
TA=25°C
PD
TA=70°C 2.3 W
-55 ~ 150 °C
STG
-15 A
3.1 W
Thermal Resistance Ratings
1
1
t≦5 sec
t≦5 sec
R
25 °C / W
θJC
R
50 °C / W
θJA
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
15-Jul-2011 Rev. A Page 1 of 4
Page 2
SSG4407P
-15A, -30V, R
Elektronische Bauelemente
P-Ch Enhancement Mode Power MOSFET
DS(ON)
9 mΩ
ΩΩΩ
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise specified)
Parameter Symbol Min. Typ. Max. Unit Teat Conditions
Static
Gate-Threshold Voltage V
Gate-Body Leakage Current I
Zero Gate Voltage Drain Current I
On-State Drain Current 1 I
Drain-Source On-Resistance 1 R
Forward Transconductance 1 gfs - 44 - S VDS= -5V, ID= -13A
Diode Forward Voltage VSD - -0.7 - V IS=2.1A, VGS=0
-1 - - V VDS=VGS, ID= -250µA
GS(th)
- - ±100 nA VDS=0, VGS= ±25V
GSS
DSS
-50 - - A VDS= -5V, VGS= -10V
D(on)
DS(ON)
- - -1
- - -5 VDS= -24V, VGS=0, TJ=55°C
- - 9
- - 13 VGS= -4.5V, ID= -11A
- - 11 VGS= -10V,ID= -13 A,TJ=55°C
VDS= -24V, VGS=0
µA
VGS= -10V, ID= -13A
mΩ
Dynamic 2
Total Gate Charge Qg - 37 Gate-Source Charge Qgs - 10 Gate-Drain Charge Qgd - 14.5 -
nC
ID= -13A
VDS= -15V
VGS= -10V
Switching
Turn-On Delay Time T
Rise Time Tr - 11 Turn-Off Delay Time T
Fall Time Tf - 68 -
Notes:
1. Pulse test：PW ≦ 300µs duty cycle ≦ 2%.
2. Guaranteed by design, not subject to production testing.
- 19 -
d(on)
- 121 -
d(off)
nS
VDD= -15V
ID= -1A
V
= -10V
GEN
RL= 6Ω
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
15-Jul-2011 Rev. A Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVE
SSG4407P
-15A, -30V, R
P-Ch Enhancement Mode Power MOSFET
DS(ON)
9 mΩ
ΩΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
15-Jul-2011 Rev. A Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVE
SSG4407P
-15A, -30V, R
P-Ch Enhancement Mode Power MOSFET
DS(ON)
9 mΩ
ΩΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
15-Jul-2011 Rev. A Page 4 of 4
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