Page 1
r
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low R
and to ensure minimal
DS(on)
power loss and heat dissipation. Typical
applications are DC-DC converters and power
management in portable and battery-powered
products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
FEATURES
Low R
Low thermal impedance copper leadframe SOP-8 saves board space.
Fast switching speed.
High performance trench technology.
provides higher efficiency and extends battery life.
DS(on)
PACKAGE INFORMATION
Package MPQ LeaderSize
SOP-8 2.5K 13’ inch
SSG4402N
6.7 A, 60 V, R
N-Ch Enhancement Mode Power MOSFET
REF.
38 m
DS(ON)
SOP-8
B
L
A
H
G
Millimeter
Min. Max. Min. Max.
A 5.80 6.20 H 0.35 0.49
B 4.80 5.00 J 0.375 REF.
C 3.80 4.00 K 45°
D 0° 8° L 1.35 1.75
E 0.40 0.90 M 0.10 0.25
F 0.19 0.25 N 0.25 REF.
G 1.27 TYP.
REF.
C
K
J
Millimete
F
D
M
N
E
S
S
S
G
MAXIMUM RATINGS (T
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current 1
Pulsed Drain Current 2 I
Continuous Source Current (Diode Conduction) 1 I
Total Power Dissipation 1
Operating Junction & Storage Temperature Range TJ, T
Maximum Junction to Ambient a
= 25°C unless otherwise specified)
A
Parameter Symbol Ratings Unit
I
@ TA = 25°C 6.7 A
D
ID @ TA = 70°C 5.8 A
25 A
DM
2 A
S
PD @ TA = 25°C 3.1 W
PD @ TA = 70°C 2 W
-55 ~ 150 °C
STG
THERMAL RESISTANCE RATINGS
t ≦ 10 sec
Steady State 80 °C / W
R
θJA
40 °C / W
Notes:
1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
D
D
D
D
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
06-Jan-2011 Rev. A Page 1 of 4
Page 2
SSG4402N
6.7 A, 60 V, R
Elektronische Bauelemente
N-Ch Enhancement Mode Power MOSFET
DS(ON)
38 m
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise specified)
A
Parameter Symbol Min. Typ. Max. Unit Test conditions
Static
Gate-Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current 1 I
Drain-Source On-Resistance 1 R
Forward Transconductance 1 g
Diode Forward Voltage VSD - - 1.2 V IS= 2.0A, VGS= 0V
1 - - V VDS= VGS, ID= 250μA
GS(th)
- - ±100 nA VDS= 0V, VGS= 20V
GSS
DSS
20 - - A VDS= 5V, VGS= 10V
D(on)
DS(ON)
- 11 - S VDS= 15V, ID= 5.2A
fs
- - 1 μA V
- - 10 μA VDS= 60V, VGS= 0V, TJ= 55°C
- - 38
- - 50 VGS= 4.5V, ID= 5.9A
mΩ
DS
VGS= 10V, ID= 6.7A
Dynamic 2
Total Gate Charge Qg - 8.5 -
Gate-Source Charge Qgs - 3.3 -
Gate-Drain Charge Qgd - 4.0 -
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-On Delay Time T
- 1456 -
ISS
- 172 -
OSS
- 97 -
RSS
- 18 -
d(on)
Rise Time Tr - 59 -
Turn-Off Delay Time T
- 37 -
d(off)
Fall Time Tf - 9 -
Notes:
1 Pulse test：PW ≦ 300
2 Guaranteed by design, not subject to production testing.
μs duty cycle ≦ 2%.
nC
pF
nS
I
= 6.7A
D
V
DS
V
GS
f = 1 MHz
VDS= 30V
V
GS
VDD= 30V
= 1A
I
D
V
GEN
R
L
= 60V, VGS= 0V
= 30V
= 4.5V
= 0V
= 10V
= 30Ω
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
06-Jan-2011 Rev. A Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTICS CURVE
SSG4402N
6.7 A, 60 V, R
N-Ch Enhancement Mode Power MOSFET
DS(ON)
38 m
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
06-Jan-2011 Rev. A Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTICS CURVE
SSG4402N
6.7 A, 60 V, R
N-Ch Enhancement Mode Power MOSFET
DS(ON)
38 m
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
06-Jan-2011 Rev. A Page 4 of 4
Loading...