Page 1
A
H
B
M
D
C
J
K
F
L
E
N
G
Millimeter
Millimeter
Min. Max. Min. Max.
A 5.80 6.20 H 0.35 0.49
B 4.80 5.00 J 0.375 REF.
C 3
.80 4.00 K 45°
D 0° 8° L 1.35 1.75
E 0.40 0.90 M 0.10 0.25
F 0.19 0.25 N 0.25 REF.
G 1.27 TYP.
G
S
S
S
D
D
D
D
Elektronische Bauelemente
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to provide
low R
and to ensure minimal power loss and
DS(on)
heat dissipation.
FEATURES
Low R
provides higher efficiency and
DS(on)
extends battery life.
Low thermal impedance copper leadframe
SOP-8 saves board space.
Fast switching speed.
High performance trench technology.
APPLICATION
DC-DC converters and power management in portable and
battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
SSG4394N
6.5A 150V, R
REF.
DS(ON)
50mΩ
Ω
ΩΩ
SOP-8
REF.
PACKAGE INFORMATION
Package MPQ Leader Size
SOP-8 2.5K 13 inch
MAXIMUM RATINGS
Drain-Source Voltage VDS 150 V
Gate-Source Voltage VGS
Continuous Drain Current 1
Pulsed Drain Current 2 IDM 50 A
Continuous Source Current (Diode Conduction) 1 IS 4.6 A
Total Power Dissipation 1
Operating Junction & Storage Temperature Range TJ, T
Maximum Junction to Ambient 1
Notes:
1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
(TA = 25°C unless otherwise specified)
Parameter Symbol Ratings Unit
±
20 V
TA = 25°C
6.5 A
ID
TA = 70°C 5.5 A
TA = 25°C
3.1 W
PD
TA = 70°C 2.2 W
-55~150 °C
STG
THERMAL RESISTANCE RATINGS
t ≦10sec
Steady State
R
θJA
40 °C / W
80 °C / W
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
31-Jul-2012Rev. A Page 1 of 4
Page 2
SSG4394N
6.5A 150V, R
Elektronische Bauelemente
N-Ch Enhancement Mode Power MOSFET
DS(ON)
50mΩ
Ω
ΩΩ
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise specified)
Parameter Symbol Min. Typ. Max. Unit Test conditions
Static
Gate-Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current 1 I
Drain-Source On-Resistance 1 R
Forward Transconductance 1 gfs - 20 - S VDS=15V, ID=5.2A
Diode Forward Voltage VSD - 0.72 - V IS=2.3A, VGS=0
1 - - V VDS=VGS, ID=250µA
GS(th)
- -
GSS
DSS
13 - - A VDS=5V, VGS=10V
D(on)
DS(ON)
- - 1
- - 25 VDS=120V, VGS=0, TJ= 55°C
- - 50
- - 60 VGS=5.5V, ID=4.8A
±
100 nA VDS=0, VGS= ±20V
VDS=120V, VGS=0
µA
VGS=10V, ID=5.2A
mΩ
Dynamic 2
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Qg - 58 Gate-Source Charge Qgs - 16 Gate-Drain Charge Qgd - 34 Turn-On Delay Time T
Rise Time Tr - 27 Turn-Off Delay Time T
Fall Time Tf - 37 -
Notes:
1 Pulse test：PW ≦ 300µs duty cycle ≦ 2%.
2 Guaranteed by design, not subject to production testing.
- 4388 -
iss
- 260 -
oss
- 239 -
rss
- 20 -
d(on)
- 129 -
d(off)
pF
nC
ns
VDS=15V
VGS=0
f=1MHz
ID=5.2A
VDS=75V
VGS=5.5V
VDS=75V
ID=5.2A
V
GEN
RL=14.5Ω
R
GEN
=10V
=6Ω
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
31-Jul-2012Rev. A Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVES
SSG4394N
6.5A 150V, R
N-Ch Enhancement Mode Power MOSFET
DS(ON)
50mΩ
Ω
ΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
31-Jul-2012Rev. A Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVES
SSG4394N
6.5A 150V, R
N-Ch Enhancement Mode Power MOSFET
DS(ON)
50mΩ
Ω
ΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
31-Jul-2012Rev. A Page 4 of 4
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