Page 1
r
Elektronische Bauelemente
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to provide
low R
and to ensure minimal power loss and
DS(on)
heat dissipation.
FEATURES
Low R
extends battery life.
Low thermal impedance copper leadframe
SOP-8 saves board space.
Fast switching speed.
High performance trench technology.
provides higher efficiency and
DS(on)
APPLICATION
DC-DC converters and power management in portable and
battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION
Package MPQ Leader Size
SOP-8 2.5K 13’ inch
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
SSG4392N
2.9A, 150V, R
REF.
A 5.80 6.20 H 0.35 0.49
B 4.80 5.00 J 0.375 REF.
C 3.80 4.00 K 45°
D 0° 8° L 1.35 1.75
E 0.40 0.90 M 0.10 0.25
F 0.19 0.25 N 0.25 REF.
G 1.27 TYP.
S
S
S
G
255 m
DS(ON)
SOP-8
B
A
H
G
Millimeter Millimete
Min. Max.
REF.
C
J
D
L
M
N
K
E
F
Min. Max.
D
D
D
D
(T
MAXIMUM RATINGS
Drain-Source Voltage VDS 150 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current 1
Pulsed Drain Current 2 I
Continuous Source Current (Diode Conduction) 1 I
Total Power Dissipation 1
Operating Junction & Storage Temperature Range TJ, T
Maximum Junction to Case 1 t ≦ 5 sec R
Maximum Junction to Ambient 1 t ≦ 5 sec R
Notes:
1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
= 25°C unless otherwise specified)
A
Parameter Symbol Ratings Unit
TA = 25°C 2.9 A
TA = 70°C
TA = 25°C 3.1 W
T
= 70°C
A
ID
2.4 A
20 A
DM
4 A
S
P
D
-55~150 °C
STG
2.2 W
THERMAL RESISTANCE RA TINGS
40 °C / W
θJC
80 °C / W
θJA
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
12-May-2011 Rev. B Page 1 of 4
Page 2
SSG4392N
2.9A, 150V, R
Elektronische Bauelemente
N-Ch Enhancement Mode Power MOSFET
DS(ON)
255 m
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise specified)
A
Parameter Symbol Min. Typ. Max. Unit Test conditions
Static
Gate-Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current 1 I
Drain-Source On-Resistance 1 R
Forward Transconductance 1 g
Diode Forward Voltage VSD - 0.7 - V IS=2A, VGS=0
1 - - V VDS=VGS, ID=250μA
GS(th)
- - ±10 nA VDS=0, VGS= ±20V
GSS
- - 1 VDS=120V, VGS=0
DSS
1.5 - - A VDS=5V, VGS=10V
D(on)
- - 25
μA
- - 255 VGS=10V, ID=2.3A
DS(ON)
- 10 - S VDS=15V, ID=2.3A
fs
- - 290
mΩ
Dynamic 2
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Qg - 12 -
Gate-Source Charge Qgs - 3.3 -
Gate-Drain Charge Qgd - 6.5 -
Turn-On Delay Time T
Rise Time Tr - 11 -
Turn-Off Delay Time T
Fall Time Tf - 23 -
Notes:
1 Pulse test：PW ≦ 300μs duty cycle ≦ 2%.
2 Guaranteed by design, not subject to production testing.
- 920
iss
- 101
oss
- 77
rss
- 10 -
d(on)
- 59 -
d(off)
pF
nC
ns
V
=120V, VGS=0, TJ= 55°C
DS
V
=4.5V, ID=2.2A
GS
V
=15V
DS
V
=0
GS
f=1MHz
I
=2.3A
D
V
=75V
DS
V
=4.5V
GS
V
=75V
DD
I
=2.3A
D
V
=10V
GEN
= 32.3Ω
R
L
R
=6Ω
GEN
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
12-May-2011 Rev. B Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVES
SSG4392N
N-Ch Enhancement Mode Power MOSFET
2.9A, 150V, R
DS(ON)
255 m
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
12-May-2011 Rev. B Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVES
SSG4392N
2.9A, 150V, R
N-Ch Enhancement Mode Power MOSFET
DS(ON)
255 m
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
12-May-2011 Rev. B Page 4 of 4
Loading...