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Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSG4228 provide the designer with the best
Combination of fast switching, ruggedized device design,
Ultra low on-resistance and cost-effectiveness.
FEATURES
Low on-resistance
Simple Drive Requirement
Double-N MosFET Package
MARKING CODE
4228SS
= Date Code
PACKAGE INFORMATION
SSG4228
6.8A, 30V, R
Dual-N Enhancement Mode Power MOSFET
H
REF.
A 5.80 6.20 H 0.35 0.49
B 4.80 5.00 J 0.375 REF.
C 3.80 4.00 K 45°
D0° 8° L 1.35 1.75
E 0.40 0.90 M 0.10 0.25
F 0.19 0.25 N 0.25 REF.
G 1.27 TYP.
26m
DS(ON)
SOP-8
B
A
G
Millimeter Millimete
Min. Max.
REF.
C
J
D
L
M
N
K
E
F
Min. Max.
Package MPQ LeaderSize
SOP-8 3K 13’ inch
S
G
S
G
ABSOLUTE MAXIMUM RATINGS (T
Parameter Symbol Ratings Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current 3
Pulsed Drain Current 1 I
Power Dissipation 1 P
Maximum Junction to Ambient 3 R
Linear Derating Factor 0.016 W / °C
= 25°C unless otherwise specified)
A
TA = 25°C 6.8
I
T
= 70°C
A
D
40 A
DM
2 W
D
62.5 °C / W
θJA
5.5
A
D
D
D
D
Operating Junction & Storage Temperature Range TJ, T
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
18-Feb-2011 Rev. B Page 1 of 4
-55~150 °C
STG
Page 2
SSG4228
6.8A, 30V, R
Elektronische Bauelemente
Dual-N Enhancement Mode Power MOSFET
DS(ON)
26m
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise specified)
j
Parameter Symbol Min. Typ. Max. Unit Test condition
Static
Drain-Source Breakdown Voltage BV
Breakdown Voltage Temp.
Coefficient
Gate-Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-Resistance 2 R
Total Gate Charge 2 Q
Gate-Source Charge Qgs - 2 -
Gate-Drain (“Miller”) Charge Qgd - 6 -
Turn-On Delay Time 2 T
Rise Time Tr - 9 -
Turn-Off Delay Time T
Fall Time Tf - 6 -
30 - - V VGS=0V, ID=250μA
DSS
BV△
/T△
DS
1 - 3 V VDS=VGS, ID =250μA
GS(th)
- - ±100 nA VGS=±20V
GSS
- 0.03 - V / °C Reference to 25°C, ID =1mA
j
- - 1 μA VDS=30V,VGS=0
DSS
- - 25 μA VDS=24V,VGS=0
- - 26 VGS=10V, ID =6A
DS(ON)
- 9 15
g
- 10 -
d(on)
- 18 -
d(off)
- - 40
mΩ
VGS=4.5V, ID =4A
ID= 6.8A
V
nC
nS
DS
V
GS
V
DS
I
D
V
GS
R
G
R
D
= 24V
= 4.5V
= 15V
= 1A
= 10V
= 3.3Ω
= 15Ω
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
- 580 930
iss
- 150 -
oss
- 108 -
rss
pF
V
V
f=1.0MHz
Forward Transfer Conductance Gfs - 15 - S VDS=10V, ID=6A
Source-Drain Diode
Forward On Voltage 2 V
Reverse Recovery Time 2 T
Reverse Recovery Charge Qrr - 9 - nC
Notes:
1 Pulse width limited by Max. junction temperature.
2 Pulse width 300us, duty cycle 2%.
3 Surface mounted on 1 inch2 copper pad of FR4 board; 135°C/W when mounted on min. copper pad.
- - 1.3 V IS=1.7A, VGS=0V, Tj=25°C
DS
- 15 - nS
rr
I
dl/dt=100A/μs
=0V
GS
=25V
DS
=6.8A, VGS =0V
S
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
18-Feb-2011 Rev. B Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTICS CURVE
SSG4228
6.8A, 30V, R
Dual-N Enhancement Mode Power MOSFET
DS(ON)
26m
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
18-Feb-2011 Rev. B Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTICS CURVE
SSG4228
6.8A, 30V, R
Dual-N Enhancement Mode Power MOSFET
DS(ON)
26m
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
18-Feb-2011 Rev. B Page 4 of 4
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