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Elektronische Bauelemente
N-Ch Enhancement Mode Power MOSFET
3.8 A, 100 V, R
DESCRIPTION
The SSG0410 provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage applications such as DC/DC converters.
FEATURES
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
MARKING
Drain
D D D D
5 6 7 8
0410SC
1
2 3 4
S S S G
= Date Code
Gate
Source
SSG0410
158 m
DS(ON)
H
Millimeter
REF.
Min. Max. Min. Max.
A 5.80 6.20 H 0.35 0.49
B 4.80 5.00 J 0.375 REF.
C 3.80 4.00 K 45°
D 0° 8° L 1.35 1.75
E 0.40 0.90 M 0.10 0.25
F 0.19 0.25 N 0.25 REF.
G 1.27 TYP.
SOP-8
G
B
D
L
M
A
REF.
C
K
J
Millimete
N
E
F
MAXIMUM RATINGS (T
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current 3
Pulsed Drain Current 1 I
Total Power Dissipation PD 2.5 W
Linear Derating Factor 0.02 W / °C
Operating Junction & Storage Temperature Range TJ, T
Thermal Resistance Junction-ambient 3 (Max.) R
= 25°C unless otherwise specified)
A
PARAMETER SYMBOL RATINGS UNIT
ID @ TA = 25°C 3.8 A
ID @ TA = 70°C 3.0 A
8 A
DM
-55 ~ 150 °C
STG
THERMAL RESISTANCE RATINGS
50 °C / W
θJA
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
01-Jun-2010 Rev. A Page 1 of 4
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SSG0410
Elektronische Bauelemente
N-Ch Enhancement Mode Power MOSFET
3.8 A, 100 V, R
DS(ON)
158 m
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise specified)
J
PARAMETER SYMBOL MIN TYP MAX UNIT TEST CONDITION
Drain-Source Breakdown Voltage BV
Gate Threshold Voltage V
Forward Transconductance gfs - 4 - S VDS=10V, ID =2.5A
Gate-Source Leakage Current I
Drain-Source Leakage
Current(T
=25°C)
J
Drain-Source Leakage
Current(T
=55°C)
J
Static Drain-Source On-Resistance 2 R
Total Gate Charge 2 Q
Gate-Drain (“Miller”) Change Qgd - 3 Turn-on Delay Time 2 T
Rise Time Tr - 9.4 Turn-off Delay Time T
Fall Time Tf - 2.6 -
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Forward On Voltage 2 V
Notes：
1. Pulse width limited by Max. junction temperature.
2. Pulse width 300 μs, duty cycle 2≦≦％.
3. Surface mounted on 1 in
2
copper pad of FR4 board；125 °C / W when mounted on Min. copper pad.
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
01-Jun-2010 Rev. A Page 2 of 4
100 - - V VGS=0V, ID =1mA
DSS
1.0 - 3.0 V VDS=10V, ID =1mA
GS(th)
- - ±100 nA VGS=±20V
GSS
- - 10 μA VDS=100V, VGS=0V
I
DSS
- - 25 μA V
- - 158
DS(ON)
- 11.2 30
g
- 9 -
d(ON)
- 26.8 -
d(OFF)
- 975 1670
ISS
- 38 -
OSS
- 27 -
RSS
- - 175 VGS=6V, ID=2.5A
mΩ
nC V
nS
pF
=100V, VGS=0V
DS
=10V, ID=2.7A
V
GS
=80V, ID =3.5A, VGS=5V Gate-Source Chagre Qgs - 4.4 -
DS
=30V, VGS=10V
V
DS
I
=1A, RL=30Ω, RG=6Ω
D
=25V
V
DS
V
=0V
GS
f=1MHz
SOURCE-DRAIN DIODE
- - 1.2 V IS=3.8A, VGS=0V
SD
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SSG0410
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
01-Jun-2010 Rev. A Page 3 of 4
N-Ch Enhancement Mode Power MOSFET
3.8 A, 100 V, R
DS(ON)
158 m
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVES
SSG0410
N-Ch Enhancement Mode Power MOSFET
3.8 A, 100 V, R
DS(ON)
158 m
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
01-Jun-2010 Rev. A Page 4 of 4
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