Page 1
Top View
A
L
C B
D
G
H J
F
K E
1
2
3
1
2
3
1
3
2
Millimeter
Millimeter
Min. Max. Min. Max.
Elektronische Bauelemente
RoHS Compliant Product
A Suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs reduce
power loss conserve energy, making this device ideal for
use in small power management circuitry.
FEATURES
Energy Efficient
Miniature SOT–323 Surface Mount Package Saves
Board Space
APPLICATION
DC-DC converters, load switching, power management
in portable and battery–powered products such as computers,
printers, cellular and cordless telephones.
MARKING
SSF84W
-0.13A , -50V , R
P-Channel Enhancement Mode Power MOSFET
REF.
A 1.80 2.20 G 0.100 REF.
B 1.80 2.45 H 0.525 REF.
C 1.15 1.35 J 0.08 0.25
D 0.80 1.10 K - E 1.20 1.40 L 0.650 TYP.
F 0.20 0.40
DS(ON)
SOT-323
10Ω
REF.
PD
W
W：：：：Date Code
PACKAGE INFORMATION
Package MPQ Leader Size
SOT-323 3K 7 inch
THERMAL CHARACTERISTICS
Parameter
Total Device Dissipation
FR–5 Board
Maximum Junction–Ambient R
Total Device Dissipation Alumina
Substrate
Maximum Junction–Ambient R
Junction & Storage Temperature TJ, T
TA=25°C
Derate above 25°C 1.8 mW / °C
TA=25°C
Derate above 25°C 2.4 mW / °C
Gate
Symbol
Rating
225 mW
PD
556 °C / W
θJA
300 mW
PD
417 °C / W
θJA
-55 ~ 150 °C
STG
Drain
Source
Unit
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
04-Nov-2011 Rev. A Page 1 of 4
Page 2
SSF84W
-0.13A , -50V , R
Elektronische Bauelemente
P-Channel Enhancement Mode Power MOSFET
DS(ON)
10Ω
MAXIMUM RATINGS
Drain – Source Voltage VDS -50 V
Gate – Source Voltage - Continuous VGS ±20 V
Continuous Drain Current
Total Power Dissipation TA=25°C PD 225 mW
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
Maximum Junction–Ambient R
Operating Junction & Storage Temperature Range TJ, T
(TJ=25°C unless otherwise specified)
Parameter
TA=25°C ID -130
Pulsed Drain Current (tp≤10µs)
Symbol
I
DM
TL 260 °C
556 °C / W
θJA
-55 ~ 150 °C
STG
Rating
-520
Unit
mA
ELECTRICAL CHARACTERISTICS
Parameter
Drain-Source Breakdown Voltage
Gate-Source Leakage Current I
Drain-Source Leakage Current I
Gate Threshold Voltage V
Transfer Admittance |yfs| 50 - - mS
Drain-Source On Resistance R
Turn-on Delay Time T
Rise Time Tr - 1 Turn-off Delay Time T
Fall Time Tf - 8 Gate Charge QT - 6000 - pC
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Continuous Current IS - - -0.130
Pulsed Current ISM - - -0.520
Forward On Voltage 2 VSD - -2.5 - V
Notes:
1. Pulse Test: Pulse Width ≦ 300 µs, Duty cycle ≦ 2%
2. Switching characteristics are independent of operating junction temperature.
(TA=25°C unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
OFF Characteristics
V
-50 - - V VGS=0, ID = -250µA
(BR)DSS
- - ±60 µA VGS= ±20V, VDS=0
GSS
DSS
- - -0.1
- - -15 VDS= -50V, VGS=0
- - -60 V
VDS= -25V, VGS=0
µA
DS
ON Characteristics 1
-0.8 - -2 V VDS=VGS, ID = -1mA
GS(TH)
VDS= -25V,
ID= -100mA, f=1kHz
- 5 10 Ω VGS= -5V, ID= -100mA
DS(ON)
Dynamic Characteristics
- 2.5 -
d(on)
VDD= -15V
nS
pF
A
ID= -2.5A
RL=50Ω
VDS= -5V
- 16 -
d(off)
- 30 -
iss
- 10 - VDS= -5V
oss
- 5 - VDG= -5V
rss
Source-Drain Diode
Teat Conditions
= -50V, VGS=0, TJ =125°C
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
04-Nov-2011 Rev. A Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVES
SSF84W
-0.13A , -50V , R
P-Channel Enhancement Mode Power MOSFET
DS(ON)
10Ω
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
04-Nov-2011 Rev. A Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVES
SSF84W
-0.13A , -50V , R
P-Channel Enhancement Mode Power MOSFET
DS(ON)
10Ω
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
04-Nov-2011 Rev. A Page 4 of 4
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