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Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSF7401 uses advanced trench technology to
provide excellent on-resistance, low gate charge and
operation with gate voltage as low as 2.5V. It can be
used for a wide variety of applications, including load
switching, low current inverters and low current DC-DC
converters. The SSF7401 is universally used for all
commercial-industrial applications.
FEATURES
● Small Package Outline
● Lower Gate Charge
MARKING CODE
7401
PACKAGE INFORMATION
SSF7401
-30V , -2A
P-Ch Enhancement Mode MOSFET
SOT-323
A
L
3
Top View
1
K E
F
REF.
Min. Max.
A 1.80 2.20 G 0.100 REF.
B 1.80 2.45 H 0.525 REF.
C 1.15 1.35 J 0.08 0.25
D 0.80 1.10 K - E 1.20 1.40 L 0.650 TYP.
F 0.20 0.40
C B
2
G
Millimeter Millimete
1
D
H J
REF.
D
2
Min. Max.
3
Package MPQ Leader Size
SOT-323 3K 7 inch
G
S
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Ratings Unit
Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current
Pulsed Drain Current
1.2
IDM -10 A
3
TA=25°C -2 A
T
=70°C
A
-30 V
DSS
±12 V
GSS
I
D
-1.5 A
Linear Derating Factor 0.0028 °C / W
Power Dissipation P
Thermal Resistance Junction-Ambient 3 R
Operating Junction and Storage Temperature T
Note:
1. Pulse width limited by Max. junction temperature.
2. Pulse width 300≦ μs, duty cycle 2%. ≦
3. Surface mounted on FR4 board, t 10sec≦
0.35 W
D
360 °C / W
θJA
, T
-55~150 °C
J
STG
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
18-Oct-2011 Rev. B Page 1 of 4
Page 2
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (T
Parameter Symbol Min. Typ. Max. Unit Test Conditions
P-Ch Enhancement Mode MOSFET
=25°C unless otherwise specified)
J
SSF7401
-30V , -2A
Drain-Source Breakdown Voltage V
Gate Threshold Voltage V
Gate Body Leakage Current I
Zero Gate Voltage Drain
Current
TJ = 25°C - - -1 VDS= -30V, VGS=0
T
= 70°C
J
Drain-Source on-State Resistance R
(BR)DSS
GS(th)
GSS
I
DSS
DS(ON)
-30 - - V V
=0, ID= -250μA
GS
-0.5 - -1.2 V VDS=VGS, ID= -250μA
- - ±100 nA VGS= ±12V
- - -10
- - 120 V
- - 150 V
- - 190
μA
mΩ
= -24V, VGS=0
V
DS
= -10V, ID = -2A
GS
= -4.5V, ID = -1.5A
GS
V
= -2.5V, ID = -1A
GS
Forward Transconductance gFS - 4 S VDS = -5V, ID = -1.2A
Gate Resistance Rg - 12 - Ω f=1.0MHz
Dynamic
Total Gate Charge 2 Q
Gate-Source Charge Qgs - 0.72 -
Gate-Drain (‘‘Miller’’)Charge Qgd - 1.58 -
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-On Time 2
Turn-Off Time
- 5.06 -
g
- 409 -
iss
- 55 -
oss
- 42 -
rss
t
- 6.2 -
d(on)
- 3.2 -
t
r
t
- 41.2 -
d(off)
tf - 14.5 -
nC
pF
ns
= -15V,
V
DS
V
= -4.5V,
GS
I
= -1A
D
= -15V,
V
DS
V
=0,
GS
f =1MHz
V
= -15V,
DS
R
=15Ω,
L
V
= -10V,
GS
R
=3Ω
G
Source-Drain Diode
Diode Forward Voltage 2 V
Reverse Recovery Time 2 T
Reverse Recovery Charge Qrr - 5.4 - nC
Continuous Source Current (Body Diode) IS - - -0.5 A VD= VG=0, VS= -1V
Note:
1. Pulse width limited by Max. junction temperature.
2. Pulse width 300≦ μs, duty cycle 2%. ≦
3. Surface mounted on FR4 board, t. 10sec≦
- - -1 V IS= -1A,VGS=0
SD
- 13.2 - nS
RR
=-1A,VGS=0,
I
S
dl/dt=100A / μS
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
18-Oct-2011 Rev. B Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVE
SSF7401
P-Ch Enhancement Mode MOSFET
-30V , -2A
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
18-Oct-2011 Rev. B Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVE
SSF7401
P-Ch Enhancement Mode MOSFET
-30V , -2A
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
18-Oct-2011 Rev. B Page 4 of 4
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