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Elektronische Bauelemente
RoHS Compliant Product
A suffix o f “-C” specifies halogen & lead-free
DESCRIPTION
The SSF7400 uses advanced trench technology to
provide excellent on-resistance, low gate charge and
operation with gate voltage as low as 2.5V. It can be
used for a wide variety of applications, including load
switching, low current inverters and low current DC-DC
converters.
FEATURES
● Lower Gate Charge
● Small Package Outline
MARKING
7400
SSF7400
30V , 1.7A , R
N-Ch Enhancement Mode Power MOSFET
A
L
3
Top View
1
K E
F
REF.
Millimeter Millimete
Min. Max.
A 1.80 2.20 G 0.100 REF.
B 1.80 2.45 H 0.525 REF.
C 1.15 1.35 J 0.08 0.25
D 0.80 1.10 K - E 1.20 1.40 L 0.650 TYP.
F 0.20 0.40
85mΩ
DS(ON)
SOT-323
C B
2
D
G
1
2
H J
REF.
Min. Max.
3
PACKAGE INFORMATION
Package MPQ Leader Size
SOT-323 3K 7 inch
ABSOLUTE MAXIMUM RATINGS (T
Parameter Symbol Ratings Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±12 V
Continuous Drain Current3
Pulsed Drain Current
Power Dissipation TA=25°C P
Linear Derating Factor 0.0028 W / °C
1,2
IDM 10 A
=25°C unless otherwise specified)
A
TA=25°C 1.7
I
=70°C
T
A
D
1.3
0.35 W
D
A
Operating Junction and Storage Temperature Range T
, T
-55~150 °C
J
STG
Thermal Resistance Rating
Maximum Junction to Ambient3 R
Notes:
1. Pulse width limited by Max. junction temperature.
2. Pulse width≦300us, duty cycle≦2%.
3. Surface mounted on FR4 board, t ≦10sec.
360 °C / W
JA
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
25-Aug-2011 Rev. B Page 1 of 4
Page 2
(
SSF7400
30V , 1.7A , R
Elektronische Bauelemente
N-Ch Enhancement Mode Power MOSFET
DS(ON)
85mΩ
ELECTRICAL CHARACTERISTICS (T
=25°C unless otherwise specified)
A
Parameter Symbol Min. Typ. Max. Unit Teat Conditions
Static
Drain-Source Breakdown Voltage BV
Gate-Threshold Voltage V
Gate-Body Leakage Current I
Drain-Source Leakage Current I
Drain-Source On-Resistance 1 R
Forward Transconductance g
DSS
GS(th)
GSS
DSS
DS(ON)
fs
30 - - V VGS=0, ID=250μA
0.6 - 1.4 V VDS=VGS, ID=250μA
- - ±100 nA VGS=±12V
- - 1 VDS=30V, VGS=0
- - 5
- - 85 VGS=10V, ID=1.5A
- - 100 VGS=4.5V, ID=1.5A
- - 140
- 4 - S VDS=5V, ID=1.5A
Dynamic
Total Gate Charge1 Q
Gate-Source Charge Qgs - 0.62 -
Gate-Drain (“Miller”) Change Q
Turn-on Delay Time1 T
Rise Time Tr - 2.3 -
Turn-off Delay Time T
Fall Time Tf - 3 -
- 4.82 -
g
- 1.58 -
gd
- 2.5 -
d(on)
- 22 -
d(off)
μA
VDS=24V, VGS=0
mΩ
V
GS
V
DS
V
nC
GS
I
D
VDS=15V,
V
nS
GS
R
G
R
L
=2.5V, ID=1A
=15V,
=4.5V,
=1.7A
=10V,
=3Ω,
=10Ω,
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
- 390 -
iss
- 54.4 -
oss
- 41 -
rss
pF
VGS=0,
V
DS
f=1.0MHz
Gate Resistance Rg - 3 - Ω f=1.0MHz
Source-Drain Diode
Continuous Source Current
Body Diode)
Diode Forward Voltage1 V
Reverse Recovery Time1 T
Reverse Recovery Charge QRR - 3.6 - nC
Notes:
1. Pulse width≦300us, duty cycle≦2%.
IS - - 0.5 A VG=VD=0, VS=1V
- - 1 V IS=1A, VGS=0
SD
- 10 - ns
RR
=1.7A, VGS=0
I
S
dI/dt=100A/μs
=15V,
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
25-Aug-2011 Rev. B Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVE
SSF7400
N-Ch Enhancement Mode Power MOSFET
30V , 1.7A , R
DS(ON)
85mΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
25-Aug-2011 Rev. B Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVE
SSF7400
30V , 1.7A , R
N-Ch Enhancement Mode Power MOSFET
DS(ON)
85mΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
25-Aug-2011 Rev. B Page 4 of 4
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