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Elektronische Bauelemente
A Suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
R
and to ensure minimal power loss and heat
DS(on)
dissipation. Typical applications are DC-DC converters
and power management in portable and battery-powered
products such as computers, printers, PCMCIA cards,
cellular and cordless telephones.
FEATURES
Low RDS(on) provides higher efficiency and
extends battery life.
Low thermal impedance copper leadframe
SOT-323 saves board space.
Fast switching speed.
High performance trench technology.
PRODUCT SUMMARY
V
(V) R
DS
-30
0.112@V
0.172@VGS= -4.5V -1.2
(on) ( I
DS
= -10V -1.5
GS
D
(A)
RoHS Compliant Product
Gate
-1.5A, -30V, R
P-Channel MOSFET
Drain
Source
SSF1331P
0.112Ω
DS(on)
SOT-323
A
L
3
Top View
1
K E
F
2
G
Millimeter
REF.
Min. Max. Min. Max.
A 1.80 2.20 G 0.100 REF.
B 1.80 2.45 H 0.525 REF.
C 1.15 1.35 J 0.08 0.25
D 0.80 1.10 K - E 1.20 1.40 L 0.650 TYP.
F 0.20 0.40
C B
D
H J
REF.
3
1
2
Millimete
MAXIMUM RATINGS
Drain – Source Voltage VDS -30 V
Gate – Source Voltage VGS ±20 V
Continuous Drain Current a
Pulsed Drain Current b I
Continuous Source Current (Diode Conduction)
Power Dissipation a
Operating Junction & Storage Temperature
Range
Maximum Thermal Resistance
Junction-Ambient
Note:
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
(TA = 25°C unless otherwise specified)
PARAMETER SYMBOL RATING UNIT
I
@ TA=25°C -1.5
D
ID @ TA=70°C -1.2
a
DM
IS ±0.28 A
@ TA=25°C 0.34
P
D
-2.5 A
PD@ TA=70°C 0.22
T
, T
-55~150 °C
J
STG
THERMAL RESISTANCE RATINGS
a
t ≦ 5 sec
Steady-State 430
R
θJA
375
A
W
°C / W
17-Jun-2010 Rev. A Page 1 of 4
Page 2
SSF1331P
Elektronische Bauelemente
-1.5A, -30V, R
P-Channel MOSFET
DS(on)
0.112Ω
ELECTRICAL CHARACTERISTICS (T
PARAMETER SYMBOL MIN TYP MAX UNIT TEST CONDITION
Gate-Threshold Voltage V
Gate-Source Leakage Current I
Zero Gate Voltage Drain Current I
On-State Drain Current a I
Drain-Source On-Resistance
a
Forward Transconductance a g
Diode Forward Voltage VSD - -0.65 - V IS= -0.46A, VGS= 0V
-1 - - V VDS= V
GS(th)
- - ±100 nA VDS= 0V, VGS= ±20V
GSS
DSS
-5 - - A VDS= -5V, VGS= -10V
D(on)
R
DS(ON)
- 9 - S VDS= -5V, ID= -1.5A
FS
= 25°C unless otherwise specified)
A
STATIC CARACTERISTICS
- - -1
- - -10 VDS= -24V, VGS= 0V, TJ= 55°C
- - 112
- - 172 VGS= -4.5V, ID= -1.2A
μA
mΩ
= -250μA
GS, ID
VDS= -24V, VGS= 0V
VGS= -10V, ID= -1.5A
DYNAMIC CHARACTERISTICS b
Total Gate Charge Qg - 7.2 -
Gate-Source Charge Qgs - 1.7 -
Gate-Drain Charge Qgd - 1.5 -
Turn-on Delay Time T
- 10 -
d(ON)
Rise Time TR - 9 -
Turn-off Delay Time T
- 27 -
d(OFF)
Fall Time TF - 11 -
Notes：
a. Pulse test：PW ≦ 300us duty cycle ≦ 2%.
b. Guaranteed by design, not subject to production testing.
c. Repetitive rating, pulse width limited by junction temperature.
nC
nS
VDS= -10V
V
= -5V
GS
I
= -1.5A
D
VDD= -10V
= -1A
I
L
V
= -4.5V
GEN
RG= 6Ω
17-Jun-2010 Rev. A Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVES
SSF1331P
-1.5A, -30V, R
P-Channel MOSFET
DS(on)
0.112Ω
17-Jun-2010 Rev. A Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVES
SSF1331P
-1.5A, -30V, R
P-Channel MOSFET
DS(on)
0.112Ω
17-Jun-2010 Rev. A Page 4 of 4
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