Page 1
Top View
A
L
C B
D
G
H J
F
K E
1
2
3
1
2
3
Millimeter
M
illimeter
Min. Max. Min. Max.
SSF1320N
2A , 20V , R
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
N-Channel Enhancement Mode MOSFET
DS(ON)
58 mΩ
Ω
ΩΩ
DESCRIPTION
SOT-323
These miniature surface mount MOSFETs
utilize a high cell density trench process to provide low
R
and to ensure minimal power loss and heat dissipation.
DS(ON)
FEATURES
Low R
provides higher efficiency and extends
DS(on)
battery life.
Low gate charge
Fast switch
Miniature SOT-323 surface mount package saves
board space.
APPLICATION
DC-DC converters and power management in
portable and battery-powered products such as computers,
REF.
A 1.80 2.20 G 0.1 REF.
B 1.80 2.45 H 0.525 REF.
C 1.1 1.4 J 0.08 0.25
D 0.80 1.10 K 0.8 TYP.
E 1.20 1.40 L 0.65 TYP.
F 0.15 0.40
printers, PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION
Package MPQ Leader Size
SOT-323 3K 7 inch
REF.
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Ratings Unit
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS ±8 V
Continuous Drain Current 1
Pulsed Drain Current 2 IDM ±20 A
Continuous Source Current (Diode Conduction) 1 IS 1.6 A
Power Dissipation 1
Operating Junction and Storage Temperature Range TJ, T
Maximum Junction to Ambient 1
Notes:
1 Surface Mounted on 1” x 1” FR4 Board.
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
28-Aug-2012 Rev. A Page 1 of 4
2 Pulse width limited by maximum junction temperature.
(TA = 25°C unless otherwise specified)
TA=25°C
2 A
ID
TA=70°C 1.7 A
TA=25°C
0.34 W
PD
TA=70°C 0.22 W
-55~150 °C
STG
Thermal Resistance Ratings
t ≦ 5 sec
R
JA
Steady State 166
θ
100
°C / W
Page 2
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Gate-Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
SSF1320N
2A , 20V , R
N-Channel Enhancement Mode MOSFET
(TA = 25°C unless otherwise specified)
GS(th)
- - ±100 nA VDS=0, VGS= ±8V
GSS
DSS
0.7 - - V VDS=VGS, ID=250uA
- - 1
uA
- - 10 VDS=16V, VGS=0, TJ=55°C
DS(ON)
VDS=16V, VGS=0
58 mΩ
Ω
ΩΩ
On-State Drain Current 1 I
10 - - A V
D(on)
- - 58
Drain-Source On-Resistance 1 R
Forward Transconductance 1 g
DS(ON)
fs
mΩ
- - 82 VGS=2.5V, ID=1.7A
- 11.3 - S VDS=10V, ID=2A
Diode Forward Voltage VSD - 0.75 - V IS=1.6A, VGS=0
Dynamic 2
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Qg - 7.5 Gate-Source Charge Qgs - 0.6 Gate-Drain Charge Qgd - 1 Turn-on Delay Time T
Rise Time Tr - 24 Turn-off Delay Time T
Fall Time Tf - 10 -
Notes:
1 Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
2 Guaranteed by design, not subject to production testing.
- 720 -
iss
- 165 -
oss
- 60 -
rss
- 8 -
d(on)
- 35 -
d(off)
pF
nC
nS
=5V, VGS=4.5V
DS
VGS=4.5V, ID=2A
VDS=15V,
VGS=0,
f=1 MHz
VDS=10V,
VGS=4.5V,
ID=2A
VDD=10V,
V
=4.5V,
GEN
RL=15Ω,
ID=1A
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
28-Aug-2012 Rev. A Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVE
SSF1320N
2A , 20V , R
N-Channel Enhancement Mode MOSFET
DS(ON)
58 mΩ
Ω
ΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
28-Aug-2012 Rev. A Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVE
SSF1320N
2A , 20V , R
N-Channel Enhancement Mode MOSFET
DS(ON)
58 mΩ
Ω
ΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
28-Aug-2012 Rev. A Page 4 of 4
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